Freescale Semiconductor Technical Data Document Number: MW7IC2240N Rev. 0, 11/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. Typical Performance • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., Full Frequency Band (2110 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 30 dB Power Added Efficiency — 14% ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW Output Power • Pout @ 1 dB Compression Point = 40 Watts CW • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 Watts CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2110 - 2170 MHz, 4 W Avg., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2240NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2240GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2240NBR1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +5 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RθJC °C/W 4 W Avg. (Pout = 3.95 W Avg., Case Temperature = 68°C) Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA 3.9 1.3 40 W Avg. (Pout = 39.4 W Avg., Case Temperature = 80°C) Stage 1, 28 Vdc, IDQ1 = 90 mA Stage 2, 28 Vdc, IDQ2 = 420 mA 3.2 1.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) II (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 2 RF Device Data Freescale Semiconductor Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc) VGS(Q) — 2.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 90 mAdc, Measured in Functional Test) VGG(Q) 9.5 13 16.5 Vdc Ciss — 50 — pF Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 420 mAdc, Measured in Functional Test) VGG(Q) 7 9.8 12.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.2 0.39 1.2 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.67 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 205 — pF Stage 1 — Off Characteristics Stage 1 — On Characteristics Stage 1 — Dynamic Characteristics (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Stage 2 — Off Characteristics Stage 2 — On Characteristics Stage 2 — Dynamic Characteristics (1) 1. Part internally matched both on input and output. (continued) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 28 30 33 dB Power Added Efficiency PAE 12 14 — % ACPR — - 50 - 46 dBc IRL — - 16 - 12 dB Adjacent Channel Power Ratio Input Return Loss Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, 2110 - 2170 MHz Pout @ 1 dB Compression Point, CW P1dB — 40 — Video Bandwidth @ 40 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) VBW W MHz — 10 — Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg. GF — 0.1 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 40 W CW Φ — 1.08 — ° Delay — 1.98 — ns Part - to - Part Insertion Phase Variation @ Pout = 40 W CW, f = 2140 MHz, Six Sigma Window ΔΦ — 18.3 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.05 — dB/°C ΔP1dB — 0.004 — dBm/°C Average Group Delay @ Pout = 40 W CW, f = 2140 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 4 RF Device Data Freescale Semiconductor + C23 VDD2 1 2 3 4 5 VDD1 C4 RF INPUT Z1 C6 NC 16 DUT C12 C14 C19 C20 Z12 C8 Z3 Z2 C10 15 NC NC NC 14 Z4 Z5 Z6 Z7 C16 Z9 Z8 Z10 Z11 RF OUTPUT 6 C18 C1 7 NC 8 9 VGG1 VGG2 R1 10 11 NC R2 C9 C17 Z13 Quiescent Current Temperature Compensation 13 12 C11 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C3 C5 2.197″ 0.016″ 0.106″ 0.409″ 0.161″ 0.254″ 0.388″ C13 C15 C21 C22 C7 x 0.083″ x 0.083″ x 0.055″ x 0.322″ x 0.322″ x 0.322″ x 0.123″ Microstrip x 0.055″ Taper Microstrip Microstrip Microstrip Microstrip Microstrip Z8 Z9 Z10 Z11 Z12, Z13 PCB 0.204″ x 0.083″ Microstrip 0.273″ x 0.083″ Microstrip 0.176″ x 0.083″ Microstrip 0.364″ x 0.083″ Microstrip 0.564″ x 0.083″ Microstrip Arlon Cuclad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.5 Figure 3. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 8.2 pF Chip Capacitor ATC100B8R2BT250XT ATC C2, C16 0.4 pF Chip Capacitors ATC700B0R4BT500XT ATC C3, C14, C15 4.7 μF, 50 V Chip Capacitors GRM31CR71H475KA12L Murata C4, C5, C19, C20, C21, C22 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C6, C7, C10, C11 5.6 pF Chip Capacitors ATC100B5R6BT250XT ATC C8, C9 0.3 pF Chip Capacitors ATC700B0R3BT500XT ATC C12, C13 0.1 μF Chip Capacitors C1206C104K5RAC Kemet C17 0.6 pF Chip Capacitor ATC100B0R6BT250XT ATC C18 6.8 pF Chip Capacitor ATC100B6R8BT250XT ATC C23 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois R1, R2 10 KΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 5 C23 C10 C12 C14 C4 C19 C6 C7 C3 C1 R1 VGG1 C16 CUT OUT AREA C2 MW7IC2240N Rev. 2a C8 C9 C18 C17 C5 R2 C20 C21 C22 C11 C13 C15 Figure 4. MW7IC2240NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 6 RF Device Data Freescale Semiconductor 32 16 15 31.8 PAE 14 VDD = 28 Vdc, Pout = 4 W (Avg.) IDQ1 = 90 mA, IDQ2 = 420 mA Gps 31.2 −47 Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) ACPR−U 31 30.8 ACPR−L 30.6 30.4 13 −48 −4 −49 −8 −50 −51 IRL 30.2 −52 30 2060 2080 2100 2120 2140 2160 2180 −20 −24 −53 2220 2200 −12 −16 IRL, INPUT RETURN LOSS (dB) 31.4 ACPR (dBc) Gps, POWER GAIN (dB) 31.6 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 25 31.4 PAE Gps, POWER GAIN (dB) 31.2 31 30.8 24 Gps ACPR−U 30.6 30.4 ACPR−L 23 VDD = 28 Vdc, Pout = 10 W (Avg.) −38 IDQ1 = 90 mA, IDQ2 = 420 mA Single−Carrier W−CDMA 3.84 MHz −39 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) −40 −41 30.2 30 IRL −42 29.8 29.6 2060 −43 2080 2100 2120 2140 2160 2180 −4 −8 −44 2220 2200 −12 −16 −20 IRL, INPUT RETURN LOSS (dB) 26 ACPR (dBc) 31.6 PAE, POWER ADDED EFFICIENCY (%) Figure 5. Power Gain, Input Return Loss, Power Added Efficiency and ACPR versus Frequency @ Pout = 4 Watts Avg. −24 f, FREQUENCY (MHz) Figure 6. Power Gain, Input Return Loss, Power Added Efficiency and ACPR versus Frequency @ Pout = 10 Watts Avg. 34 33 IDQ2 = 630 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 420 mA 31 315 mA 30 210 mA 29 28 VDD = 28 Vdc, IDQ1 = 90 mA f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing 27 IDQ1 = 135 mA 33 525 mA 32 32 112.5 mA 31 90 mA 30 67.5 mA 29 28 45 mA 27 26 26 1 10 100 1 VDD = 28 Vdc, IDQ2 = 420 mA f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Two - Tone Power Gain versus Output Power @ IDQ1 = 90 mA Figure 8. Two - Tone Power Gain versus Output Power @ IDQ2 = 420 mA 100 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS −10 VDD = 28 Vdc, IDQ1 = 90 mA f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 IDQ2 = 210 mA −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 315 mA 630 mA −40 525 mA −50 135 mA VDD = 28 Vdc, IDQ2 = 420 mA f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 IDQ1 = 45 mA −30 67.5 mA −40 112.5 mA −50 135 mA −60 −60 1 100 10 1 10 Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc, IDQ1 = 90 mA IDQ2 = 420 mA, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −30 3rd Order −50 5th Order 7th Order −60 1 10 VDD = 28 Vdc, Pout = 40 W (PEP), IDQ1 = 90 mA IDQ2 = 420 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −20 IM3−U −30 IM3−L −40 IM5−U IM7−U −50 IM5−L IM7−L −60 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 11. Intermodulation Distortion Products versus Output Power Figure 12. Intermodulation Distortion Products versus Tone Spacing 38 54 53 P6dB = 47.77 dBm (59.84 W) Ideal Gps, POWER GAIN (dB) 50 P1dB = 46.23 dBm (42 W) 49 48 Actual 47 46 45 43 11 12 13 14 15 16 17 TC = −30_C −30_C 25_C 18 19 20 21 32 30 45 40 35 30 85_C 25 28 20 26 VDD = 28 Vdc IDQ1 = 90 mA IDQ2 = 420 mA f = 2140 MHz PAE 22 20 22 85_C 25_C 24 VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 2140 MHz 44 Gps 34 P3dB = 57.22 dBm (52.76 W) 51 50 36 52 Pout, OUTPUT POWER (dBm) −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Figure 10. Third Order Intermodulation Distortion versus Output Power @ IDQ2 = 420 mA −10 −40 100 Pout, OUTPUT POWER (WATTS) PEP Figure 9. Third Order Intermodulation Distortion versus Output Power @ IDQ1 = 90 mA −20 90 mA 1 10 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW Figure 13. Pulsed CW Output Power versus Input Power Figure 14. Power Gain and Power Added Efficiency versus CW Output Power 15 10 PAE, POWER ADDED EFFICIENCY (%) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 5 100 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 36 32 IDQ1 = 90 mA IDQ2 = 420 mA f = 2140 MHz 30 29 28 27 32 V 28 V TC = −30_C 34 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 31 32 25_C 30 85_C 28 26 IDQ1 = 90 mA IDQ2 = 420 mA Pout = 15 W VDD = 24 V 26 2060 25 0 10 20 30 40 50 60 70 80 2080 2100 2120 2140 2160 2180 2200 Pout, OUTPUT POWER (WATTS) CW f, FREQUENCY (MHz) Figure 15. Power Gain versus Output Power Figure 16. Power Gain versus Frequency 2220 109 MTTF (HOURS) 108 1st Stage 107 2nd Stage 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 14%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 17. MTTF versus Junction Temperature MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 9 W - CDMA TEST SIGNAL 100 −10 3.84 MHz Channel BW −20 10 1 −40 Input Signal Compressed Output Signal @ 4 W Pout 0.1 −50 (dB) PROBABILITY (%) −30 0.01 −70 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 −60 −80 −ACPR in 3.84 MHz Integrated BW −90 8 10 −ACPR in 3.84 MHz Integrated BW −100 PEAK−TO−AVERAGE (dB) Figure 18. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 19. Single - Carrier W - CDMA Spectrum MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 10 RF Device Data Freescale Semiconductor Zo = 50 Ω Zin f = 2060 MHz f = 2220 MHz f = 2220 MHz Zload f = 2060 MHz VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg. f MHz Zin W Zload W 2060 48.171 + j6.940 6.868 - j9.687 2080 52.454 + j11.553 6.432 - j8.942 2100 55.468 + j8.729 6.051 - j8.216 2120 56.312 + j12.000 5.729 - j7.545 2140 58.860 + j9.463 5.444 - j6.869 2160 57.596 + j11.427 5.193 - j6.201 2180 59.603 + j10.690 4.958 - j5.578 2200 56.867 + j10.012 4.743 - j4.969 58.144 + j9.805 4.577 - j4.353 2220 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 20. Series Equivalent Input and Load Impedance MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 11 Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 255C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1500 0.452 134 0.356 7.81 0.001 - 108 0.979 160 1550 0.407 117 0.757 - 7.8 0.000 - 67.7 0.969 157 1600 0.354 96.5 1.430 - 31 0.000 - 65.8 0.955 154 1650 0.316 85.1 2.330 - 52.1 0.001 - 27.1 0.935 151 1700 0.279 68 3.690 - 73.6 0.001 - 43.4 0.909 148 1750 0.222 49.5 5.800 - 93.3 0.002 - 21.9 0.878 143 1800 0.140 30.4 9.570 - 113 0.003 - 24.8 0.833 137 1850 0.046 21.9 17.000 - 137 0.004 - 33.7 0.737 124 1900 0.094 135 33.600 - 173 0.007 - 41.8 0.476 91.7 1950 0.238 56.4 58.300 124 0.009 - 86.4 0.396 - 79.7 2000 0.254 - 29.2 47.800 59.5 0.006 - 118 0.873 - 149 2050 0.241 - 84.1 34.300 22.9 0.004 - 122 0.927 - 171 2100 0.252 - 120 27.700 - 3.98 0.004 - 125 0.911 - 179 2150 0.201 - 142 23.900 - 28.2 0.003 - 128 0.891 177 2200 0.174 - 162 21.100 - 51.8 0.003 - 130 0.878 175 2250 0.148 168 18.800 - 75.9 0.003 - 131 0.872 175 2300 0.135 103 15.800 - 100 0.003 - 139 0.882 175 2350 0.197 35.4 12.600 - 118 0.003 - 155 0.906 174 2400 0.244 1.73 11.100 - 132 0.002 - 156 0.919 173 2450 0.291 - 11.1 10.400 - 147 0.002 - 157 0.926 171 2500 0.340 - 19 9.750 - 163 0.002 - 147 0.933 170 2550 0.391 - 26.9 9.230 - 179 0.001 - 150 0.938 169 2600 0.435 - 35.2 8.760 164 0.001 - 144 0.942 168 2650 0.475 - 44.4 8.290 146 0.001 - 137 0.945 166 2700 0.455 - 46 7.050 129 0.001 - 90.2 0.950 166 2750 0.535 - 60.2 6.690 112 0.001 - 106 0.955 164 2800 0.571 - 71.2 5.980 95.1 0.001 - 103 0.955 163 2850 0.598 - 82 5.170 78.5 0.002 - 96.5 0.954 162 2900 0.623 - 92.9 4.370 63.1 0.002 - 103 0.955 162 2950 0.643 - 102 3.690 48.7 0.002 - 96.2 0.954 161 3000 0.668 - 109 3.100 35.4 0.002 - 106 0.951 161 3050 0.681 - 116 2.580 22.7 0.002 - 107 0.952 161 3100 0.694 - 121 2.130 11 0.002 - 87.9 0.957 160 3150 0.712 - 124 1.760 - 0.057 0.002 - 96.1 0.959 160 3200 0.724 - 127 1.440 - 10.9 0.002 - 99.6 0.959 160 3250 0.726 - 130 1.170 - 21.1 0.002 - 82.4 0.962 159 3300 0.705 - 130 0.928 - 28.7 0.003 - 66.9 0.963 159 3350 0.743 - 132 0.780 - 37 0.003 - 77.2 0.959 158 3400 0.748 - 135 0.652 - 44.3 0.003 - 88 0.955 157 3450 0.753 - 137 0.555 - 50.3 0.003 - 78.6 0.955 156 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 12 RF Device Data Freescale Semiconductor Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 255C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 3500 0.759 - 140 0.486 - 56.1 0.004 - 81.1 0.954 155 3550 0.765 - 144 0.440 - 62.4 0.004 - 82 0.946 154 3600 0.770 - 148 0.401 - 69.7 0.004 - 85.9 0.941 153 3650 0.774 - 153 0.370 - 77.4 0.005 - 96.4 0.941 151 3700 0.780 - 159 0.338 - 85.1 0.006 - 94.9 0.940 150 3750 0.795 - 164 0.306 - 93.2 0.006 - 99.3 0.933 148 3800 0.810 - 170 0.273 - 101 0.008 - 110 0.928 146 3850 0.821 - 175 0.239 - 107 0.008 - 113 0.934 145 3900 0.839 - 178 0.207 - 111 0.008 - 112 0.936 144 3950 0.855 179 0.178 - 114 0.008 - 117 0.927 144 4000 0.862 176 0.156 - 116 0.008 - 123 0.935 144 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 14 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 15 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 16 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 18 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 20 RF Device Data Freescale Semiconductor MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 21 MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 22 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 Description • Initial Release of Data Sheet MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 RF Device Data Freescale Semiconductor 23 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1 Document Number: MW7IC2240N Rev. 0, 11/2007 24 RF Device Data Freescale Semiconductor