MCR100-8A 0.8A SCRs Sensitive Gate / Silicon Controlled Rectifiers Main features Symbol Value Unit IT(RMS) 0.8A A VDRM/VRRM 950 V I GT(Q1) 200 uA B B B B B A G DESCRIPTION These devices are intened to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Weight : 0.22 gram K K GA TO92 Absolute maximum ratings Symbol RMS on-state current ( 180° conduction angle ) IBT(RMS)B ITSM B F = 50Hz Non repetitive surge on-state current ( 1/2 Cycle,Sine Wave , Tj initial=25℃ ) F = 60Hz B I 2t I2t Value for fusing Critical rate of rise of on-state current IG = 10mA diG = 0.1A/us P P Parameter P P dl/dt B IGM PG(AV) T stg Tj B B B B B B B APR.2009 tp = 10ms Value Unit 0.8 A t = 10ms 8 t = 8.3ms 9 A 0.24 A2s 30 A/us 1 A 0.1 -40 to +150 -40 to +110 W P P B Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Rev.2 ℃ 1/4 Electrical characteristics (Tj = 25℃, unless otherwise specified) Symbol Test conditions MCR100-8A Unit 950 V MAX. 200 uA 0.8 5 V mA VDRM,VRRM IBGTB(1) VBDB = 7V RL=100Ω VBGTB IH B(2) VBDB = 7V , IGT = 0.5 mA RGK =1kΩ MAX. MAX. IL VBDB = 7V , IGT = 0.5 mA RGK =1kΩ MAX. 6 mA MIN. 50 V/us dV/dt (2) VD = 67 % VDRM RGK =1Kω Tj = 110℃ B B B B Static characteristics Symbol VBTB (2) ITM = 1.2A IBDRMB VBDRMB=VBRRMB IBRRMB Test conditions Tj = 25℃ tp = 380 us Tj = 25℃ Tj = 110℃ MAX. MAX. Value 1.55 10 Unit V uA 0.2 mA Thermal resistance Symbol Parameter Value RBth (j-l)B Junction to lead for DC 80 RBth (j-a)B Junction to ambient 150 Unit ℃/W ℃/W 2/4 8 7 6 5 4 3 2 1 3/4 4/4