MCR100 0.8A SCRs Series Sensitive Gate / Silicon Controlled Rectifiers Main features Symbol Value Unit IT(RMS) 0.8A A VDRM/VRRM 400 and 600 V I GT(Q1) 200 uA B B B B B A G DESCRIPTION These devices are intened to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Weight : 0.22 gram K K GA TO92 Absolute maximum ratings Symbol RMS on-state current ( 180° conduction angle ) IBT(RMS)B ITSM B F = 50Hz Non repetitive surge on-state current ( 1/2 Cycle,Sine Wave , Tj initial=25℃ ) F = 60Hz B I 2t I2t Value for fusing Critical rate of rise of on-state current IG = 10mA diG = 0.1A/us P P Parameter P P dl/dt B IGM PG(AV) T stg Tj B B B B B B B Aprit.2008 tp = 10ms Value Unit 0.8 A t = 10ms 7 t = 8.3ms 8 A 0.24 A2s 30 A/us 1 A 0.1 -40 to +150 -40 to +110 W P P B Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Rev.1 ℃ 1/5 MCR100 Electrical characteristics (Tj = 25℃, unless otherwise specified) Symbol MCR100- Test conditions VDRM,VRRM IBGT(1) B VBGTB IH B(2) IL MAX. VBDB = 7V RL=100 ohm Unit 6S 6 8 400 400 600 V 25 200 200 uA IT = 50 mA RGK =1kΩ MAX. MAX. 0.8 5 V mA IG = 1mA RGK =1kΩ MAX. 10 mA dV/dt (2) VD = 67 % VDRM RGK =1Kω Tj = 110℃ B B B B MIN. 80 75 75 V/us Static characteristics Symbol VBTB (2) ITM = 1A IBDRMB VBDRM=VB RRMB B IBRRMB Test conditions Tj = 25℃ tp = 380 us Tj = 25℃ Tj = 110℃ MAX. MAX. Value 1.7 10 Unit V uA 0.1 mA Thermal resistance Symbol Parameter Value RBth (j-l)B Junction to lead for DC 80 RBth (j-a)B Junction to ambient 150 Unit ℃/W ℃/W 2/4 MCR100 3/4 MCR100 4/4