MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.006 gram • Marking: M3A 6 5 4 1 2 3 Fig.53 ABSOLUTE RATINGS PARAMETER Symbol Value Uni ts C ollector - Emi tter Voltage VCEO -40 V C ollector - Base Voltage VCBO -60 V Emi tter - Base Voltage VEBO -6.0 V IC -600 mA C ollector C urrent - C onti nuous THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 200 mW Thermal Resistance , Junction to Ambient RJA 625 Junction Temperature TJ -55 to 150 O Storage Temperature TSTG -55 to 150 O C/W O C C Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. REV.0.1-JUL.22.2009 PAGE . 1 MMDT4403 ELECTRICAL CHARACTERISTICS P a ra me te r S ymb o l Te s t C o nd i ti o n MIN. TYP. MA X . Uni ts C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC =- 1 .0 mA , IB =0 -40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R) C B O IC = - 1 0 0 uA , IE = 0 -40 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R) E B O IE = - 1 0 0 uA , IC = 0 - 5 .0 - - V B a s e C uto ff C urre nt C o lle c to r C uto ff C ur re nt D C C urr e nt G a i n ( No te 2 ) IB L V C E = -3 5 V, V E B =-0 .4 V - - -1 0 0 nA IC E X V C E = -3 5 V, V E B =-0 .4 V - - -1 0 0 nA hF E IC =- 0 .1 mA , V C E =-1 .0 V IC =- 1 .0 mA , V C E =-1 .0 V IC =- 1 0 mA , V C E =-1 .0 V IC =- 1 5 0 mA , V C E =-2 .0 V IC =- 5 0 0 mA , V C E =-2 .0 V 30 60 100 100 20 - 300 - - C o lle c to r - E mi tte r S a tura ti o n Vo lta g e ( No te 2 ) V C E (S AT) IC =- 1 5 0 mA , IB = -1 5 mA IC =- 5 0 0 mA , IB = -5 0 mA - - -0 .4 0 -0 .7 5 V B a s e - E mi tte r S a tur a ti o n V o lta g e (No te 2 ) V B E (S AT) IC =- 1 5 0 mA , IB = -1 5 mA IC =- 5 0 0 mA , IB = -5 0 mA 0 .7 5 - - -0 .9 5 -1 .3 0 V C o lle c to r - B a s e C a p a c i ta nc e C CBO V C B =-5 V, IE =0 , f=1 MHz - - 6 .5 pF E mi tte r - B a s e C a p a c i ta nc e C EBO V C B = -0 .5 V, IC = 0 , f = 1 MHz - - 30 pF C ur re nt Ga i n - B a nd wi d th P ro d uc t FT V C E =-1 0 V, IC =-2 0 mA , f=1 0 0 MHz 200 - - MHz D e la y Ti me td V C C = -3 0 V,V B E =- 2 .0 V, IC =- 1 5 0 mA ,IB 1 =- 1 5 mA - - 15 ns Ri s e Ti me tr V C C = -3 0 V,V B E =- 2 .0 V, IC =- 1 5 0 mA ,IB 1 =- 1 5 mA - - 20 ns S to ra g e Ti me ts V C C = -3 0 V,IC = -1 5 0 mA IB 1 = IB 2 =- 1 5 mA - - 225 ns F a ll Ti me tf V C C = -3 0 V,IC = -1 5 0 mA IB 1 = IB 2 =- 1 5 mA - - 30 ns REV.0.1-JUL.22.2009 PAGE . 2 MMDT4403 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-JUL.22.2009 PAGE . 3