DATA SHEET MMBT4401W W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW SOT-323 Unit: inch (mm) FEATURES .087(2.2) .070(1.8) Collector current IC = 600mA .054(1.35) .045(1.15) In compliance with EU RoHS 2002/95/EC directives .087(2.2) .078(2.0) Collector-emitter voltage VCE = 40V .004(.10)MIN. NPN epitaxial silicon, planar design .006(.15) .002(.05) .056(1.40) .047(1.20) MECHANICAL DATA .016(.40) .008(.20) Case: SOT- 323 3 .044(1.1) .035(0.9) .004(.10)MAX. Terminals: Solderable per MIL-STD- 750, Method 2026 Approx Weight: 0.0048 gram Marking: M4A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 60 V Emitter – Base Voltage VEBO 6.0 V IC 600 mA SYMBOL Value UNIT Max Power Dissipation (Note 1) PTOT 225 mW Storage Temperature TSTG -55 to 150 ℃ Junction Temperature TJ -55 to 150 ℃ RθJ A 556 ℃/W Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER Thermal Resistance , Junction to Ambient Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. REV.0.1-MAR.4.2009 PAGE . 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) PARAMETER SYMBOL Test Condition MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage V(BR)CEO IC=1.0mA, IB=0 40 - - V Collector - Base Breakdown Voltage V(BR)CBO IC=100uA, IE =0 60 - - V Emitter - Base Breakdown Voltage V(BR)EBO IE =100uA, IC=0 6.0 - - V Base Cutoff Current IBL VCE =35V, VEB=0.4V - - 100 nA Collector Cutoff Current ICEX VCE =35V, VEB=0.4V - - 100 nA IC=0.1mA, VCE =1.0V 20 - - IC=1.0mA, VCE =1.0V 40 - - IC=10mA, VCE =1.0V 80 - - IC=150mA, VCE =1.0V 100 - 300 IC=500mA, VCE =2.0V 40 - - IC=150mA, IB=15 mA - - 0.4 IC=500mA, IB=50mA - - 0.75 IC=150mA, IB=15mA 0.75 - 0.95 IC=500mA, IB=50mA - - 1.2 DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage h FE VCE(SAT) VBE(SAT) V V Collector - Base Capacitance CCBO VCB =5V, IE =0, f=1MHz - - 6.5 pF Emitter - Base Capacitance CEBO VCB =0.5V, IC =0, f=1MHz - - 30 pF 250 - - MHz - - 15 ns - - 20 ns - - 225 ns - - 30 ns Current Gain – Bandwidth Product Delay Time Rise Time Storage Time Fall Time FT td tr ts tf IC=20mA, VCE =10V, f=100MHz VCC =30V, VBE =2.0V, IC=150mA, IB=15mA VCC =30V, VBE =2.0V, IC=150mA, IB1 =15mA VCC =30V, IC=150mA, IB1 =IB2 =15mA VCC =3V, IC =10mA, IB1 =IB2 =15mA ELECTRICAL CHARACTERISTICS CURVES All Curves TBD REV.0.1-MAR.4.2009 PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-MAR.4.2009 PAGE . 3