INFINEON IPB180P04P4L-02

Final Data Sheet
OptiMOS®-P2 Power-Transistor
IPB180P04P4L-02
Product Summary
V DS
-40
V
R DS(on),max
2.4
mW
ID
-180
Features
A
PG-TO263-7-3
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Drain
Pin 4, Tab
• Intended for reverse battery protection
Gate
Pin 1
Type
Package
Marking
IPB180P04P4L-02
PG-TO263-7-3
4QP04L02
Source
Pin 2, 3, 5, 6, 7
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
T C=25°C,
V GS=-10V1)
T C=100°C,
Value
-180
V GS=-10V2)
-140
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
-720
Avalanche energy, single pulse
E AS
I D= -90A
84
Avalanche current, single pulse
I AS
-
-180
A
Gate source voltage
V GS
-
±163)
V
Power dissipation
P tot
T C=25°C
150
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.3
page 1
mJ
2011-04-27
Final Data Sheet
Parameter
Symbol
IPB180P04P4L-02
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area4)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= -1mA
-40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-410µA
-1.2
-1.7
-2.2
Zero gate voltage drain current
I DSS
V DS=-32V, V GS=0V,
T j=25°C
-
-0.1
-1
T j=125°C2)
-
-20
-200
V DS=-32V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=-16V, V DS=0V
-
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5V, I D=-100A
-
2.6
3.9
mW
V GS=-10V, I D=-100A
-
1.8
2.4
Rev. 1.3
page 2
2011-04-27
Final Data Sheet
Parameter
Symbol
IPB180P04P4L-02
Values
Conditions
Unit
min.
typ.
max.
-
14400
18700 pF
-
4570
5900
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
180
360
Turn-on delay time
t d(on)
-
32
-
Rise time
tr
-
28
-
Turn-off delay time
t d(off)
-
146
-
Fall time
tf
-
119
-
Gate to source charge
Q gs
-
50
65
Gate to drain charge
Q gd
-
38
76
Gate charge total
Qg
-
220
286
Gate plateau voltage
V plateau
-
-3.5
-
V
-
-
-180
A
-
-
-720
V GS=0V, V DS=-25V,
f =1MHz
V DD=-20V,
V GS=-10V, I D=-180A,
R G=3.5W
ns
Gate Charge Characteristics2)
V DD=-32 V,
I D=-180 A,
V GS=0 to -10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=-100A,
T j=25°C
-
-1.0
-1.3
V
Reverse recovery time2)
t rr
V R=-20V, I F=-50A,
di F/dt =-100A/µs
-
71
-
ns
Reverse recovery charge2)
Q rr
-
101
-
nC
T C=25°C
1)
Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 200A at 25°C.
2)
Specified by design. Not subject to production test.
3)
VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3
page 3
2011-04-27
Final Data Sheet
IPB180P04P4L-02
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS ≤ -6V
160
140
120
-I D [A]
P tot [W]
100
80
60
40
20
0
0
50
100
150
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100 µs
100
0.5
1 ms
-I D [A]
Z thJC [K/W]
100
0.1
10-1
0.01
0.05
10
10-2
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
-V DS [V]
Rev. 1.3
10-6
page 4
2011-04-27
Final Data Sheet
IPB180P04P4L-02
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25°C
R DS(on) = f(I D); T j = 25°C
parameter: V GS
parameter: V GS
20
-5 V
700
-2.8 V
-10 V
-3.5 V
-3 V
18
600
16
-4.5 V
14
R DS(on) [mW]
-I D [A]
500
400
-4 V
300
12
10
8
6
200
-3.5 V
4
-4 V
100
-4.5 V
2
-3 V
0
-10 V
0
0
1
2
3
4
5
6
0
50
100
-V DS [V]
150
-I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = -6V
R DS(on) = f(T j); I D = -100A; V GS = -10V
parameter: T j
3
700
600
2.5
R DS(on) [mW]
-I D [A]
500
400
300
2
200
1.5
175 °C
100
25 °C
-55 °C
0
0
1
2
3
4
5
6
-V GS [V]
Rev. 1.3
1
-60
-20
20
60
100
140
180
T j [°C]
page 5
2011-04-27
Final Data Sheet
IPB180P04P4L-02
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
2.25
2
Ciss
C [pF]
104
-V GS(th) [V]
1.75
-4100µA
Coss
103
1.5
-410µA
1.25
102
Crss
1
101
0.75
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
35
40
-V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Drain-source breakdown voltage
IF = f(VSD)
V BR(DSS) = f(T j); I D = -1mA
parameter: T j
103
45
44
43
42
102
-V BR(DSS) [V]
-I F [A]
175 °C
25 °C
101
41
40
39
38
37
36
100
35
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V SD [V]
Rev. 1.3
-60
-20
20
60
100
140
180
T j [°C]
page 6
2011-04-27
Final Data Sheet
13 Typ. gate charge
IPB180P04P4L-02
14 Gate charge waveforms
V GS = f(Q gate); I D = -180A pulsed
parameter: V DD
12
V GS
-8V
10
Qg
-32V
-V GS [V]
8
6
4
2
Q gate
Q gs
Q gd
0
0
50
100
150
200
Q gate [nC]
Rev. 1.3
page 7
2011-04-27
Final Data Sheet
IPB180P04P4L-02
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 8
2011-04-27
Final Data Sheet
IPB180P04P4L-02
Revision History
Version
Rev. 1.3
Date
Changes
1.1
02.09.2009 RDS(on)@4.5V: Id changed to 135A
1.1
02.09.2009 VGS(th): ID changed to 410uA
1.2
07.10.2009 RDS(on)@4.5V: ID changed to 80A
1.2
07.10.2009 RDS(on)@10V: ID changed to 80A
1.2
07.10.2009 VSD: ID changed to 80A
1.3
27.04.2011 Final Data Sheet
page 9
2011-04-27