IPB180N06S4-H1 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon • Ultra high ID Type Package Marking IPB180N06S4-H1 PG-TO263-7-3 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 180 T C=100°C, V GS=10V2) 180 Unit A Pulsed drain current2) I D,pulse T C=25°C 720 Avalanche energy, single pulse2) E AS I D=90A 700 mJ Avalanche current, single pulse I AS - 180 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 250 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.60 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=200µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.03 1 - 10 200 V DS=60V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 1.3 1.7 mΩ Rev. 1.0 page 2 2009-03-25 IPB180N06S4-H1 Parameter Symbol Values Conditions Unit min. typ. max. - 16840 21900 pF - 4120 5360 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 160 320 Turn-on delay time t d(on) - 30 - Rise time tr - 5 - Turn-off delay time t d(off) - 60 - Fall time tf - 15 - Gate to source charge Q gs - 84 110 Gate to drain charge Q gd - 22.5 45 Gate charge total Qg - 208 270 Gate plateau voltage V plateau - 5.0 - V - - 180 A - - 720 V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=180A, R G=3.5Ω ns Gate Charge Characteristics2) V DD=48V, I D=180A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C 0.6 0.95 1.3 V Reverse recovery time2) t rr V R=30V, I F=180A, di F/dt =100A/µs - 60 - ns Reverse recovery charge2) Q rr - 90 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 299A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-25 IPB180N06S4-H1 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 300 200 250 160 200 I D [A] P tot [W] 120 150 80 100 40 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 µs 100 I D [A] Z thJC [K/W] 0.5 1 ms 10-1 0.1 0.05 10 10-2 0.01 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2009-03-25 IPB180N06S4-H1 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 720 10 V 5 7V 8V 6V 5V 640 4 560 6V 400 R DS(on) [mΩ] I D [A] 480 320 3 7V 2 8V 240 10 V 160 1 5V 80 0 0 0 1 2 3 4 5 6 0 160 320 V DS [V] 480 640 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD parameter: T j 720 2.5 -55 °C 640 25 °C 560 2 R DS(on) [mΩ] I D [A] 480 175 °C 400 320 1.5 240 1 160 80 0 3 4 5 6 7 V GS [V] Rev. 1.0 0.5 -60 -20 20 60 100 140 180 T j [°C] page 5 2009-03-25 IPB180N06S4-H1 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 Ciss 3.5 4 C [pF] V GS(th) [V] 10 2000 µA 3 Coss 103 200 µA 2.5 102 Crss 2 101 1.5 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25 °C 175 °C I AV [A] I F [A] 100 °C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 150 °C 0.1 1 10 100 1000 t AV [µs] page 6 2009-03-25 IPB180N06S4-H1 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 90 A V BR(DSS) = f(T j); I D = 1 mA 66 800 64 V BR(DSS) [V] E AS [mJ] 600 400 62 60 200 58 56 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 10 V GS 9 12 V Qg 48 V 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 40 80 120 160 200 Q gate Q gd 240 Q gate [nC] Rev. 1.0 page 7 2009-03-25 IPB180N06S4-H1 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-25 IPB180N06S4-H1 Revision History Version Date Changes Revision 1.0 Rev. 1.0 25.03.2009 Final data sheet page 9 2009-03-25