IPD25N06S4L-30 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD25N06S4L-30 PG-TO252-3-11 4N06L30 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 25 T C=100°C, V GS=10V1) 17 Unit A Pulsed drain current2) I D,pulse T C=25°C 92 Avalanche energy, single pulse2) E AS I D=12.5A 12 mJ Avalanche current, single pulse I AS - 25 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25°C 29 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 − Rev. 1.0 page 1 2009-03-23 IPD25N06S4L-30 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 5.1 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=8µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.01 1 - 5 100 V DS=60V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=12.5A - 36 56 mΩ V GS=10V, I D=25A - 23 30 Rev. 1.0 page 2 2009-03-23 IPD25N06S4L-30 Parameter Symbol Values Conditions Unit min. typ. max. - 935 1220 - 265 345 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 13 32 Turn-on delay time t d(on) - 6 - Rise time tr - 1 - Turn-off delay time t d(off) - 15 - Fall time tf - 2 - Gate to source charge Q gs - 3.9 5.1 Gate to drain charge Q gd - 1.6 3.2 Gate charge total Qg - 12.5 16.3 Gate plateau voltage V plateau - 4.2 - V - - 25 A - - 100 0.6 0.95 1.3 V - 8 - ns - 8 - nC V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=25A, R G=3.5Ω pF ns Gate Charge Characteristics2) V DD=48V, I D=25A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=25A, T j=25°C Reverse recovery time2) t rr V R=30V, I F=I S, di F/dt =100A/µs Reverse recovery charge2) Q rr 1) T C=25°C Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-23 IPD25N06S4L-30 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 40 30 25 30 I D [A] P tot [W] 20 20 15 10 10 5 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 100 1 µs Z thJC [K/W] 0.1 I D [A] 10 µs 10 100 µs 0.05 10-1 0.01 single pulse 1 ms 10-2 1 10-3 0.1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2009-03-23 IPD25N06S4L-30 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 100 100 10 V 4V 4.5 V 5V 6V 90 80 80 6V 70 I D [A] R DS(on) [mΩ] 60 40 5V 60 50 4.5 V 40 20 4V 30 10 V 0 20 0 1 2 3 4 5 6 0 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 25 A; V GS = 10 V parameter: T j 45 100 -55 °C 40 80 25 °C 35 R DS(on) [mΩ] I D [A] 60 175 °C 40 30 25 20 20 0 1 2 3 4 5 6 V GS [V] Rev. 1.0 15 -60 -20 20 60 100 140 180 T j [°C] page 5 2009-03-23 IPD25N06S4L-30 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.5 2 1.5 C [pF] V GS(th) [V] 80 µA 8 µA 103 Ciss Coss 1 102 0.5 Crss 1 0 10 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 103 100 102 10 25 °C I F [A] I AV [A] 100 °C 150 °C 101 1 175 °C 25 °C 0.6 0.8 100 0.1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.0 0.1 1 10 100 1000 t AV [µs] page 6 2009-03-23 IPD25N06S4L-30 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 12.5 A V BR(DSS) = f(T j); I D = 1 mA 66 14 12 64 V BR(DSS) [V] E AS [mJ] 10 8 6 62 60 4 58 2 56 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 25 A pulsed parameter: V DD 10 V GS 12 V 9 48 V Qg 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 2 4 6 8 10 12 Q gate Q gd 14 Q gate [nC] Rev. 1.0 page 7 2009-03-23 IPD25N06S4L-30 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-23 IPD25N06S4L-30 Revision History Version Date Changes Revision 1.0 Rev. 1.0 23.03.2009 Final data sheet page 9 2009-03-23