INFINEON IPD250N06N3G

Type
IPD250N06N3 G
OptiMOS(TM)3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
V DS
60
V
R DS(on),max
25
mΩ
ID
28
A
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD250N06N3 G
Package
PG-TO252-3
Marking
250N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
28
V GS=10 V, T C=100 °C
20
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
112
Avalanche energy, single pulse3)
E AS
I D=20 A, R GS=25 Ω
13
mJ
Gate source voltage
V GS
±20
V
1)
2)
3)
Rev.2.0
J-STD20 and JESD22
See figure 3 for more detailed information
See figure 13 for more detailed information
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2008-11-26
IPD250N06N3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Value
T C=25 °C
IEC climatic category; DIN IEC 68-1
Parameter
Unit
36
W
-55 ... 175
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
4.2
minimal footprint
-
-
75
6 cm² cooling area 4)
-
-
50
60
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=11 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=28 A
-
20.7
25
mΩ
Gate resistance
RG
-
0.9
-
Ω
Transconductance
g fs
12
25
-
S
|V DS|>2|I D|R DS(on)max,
I D=28 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.0
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2008-11-26
IPD250N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
920
1200
-
200
270
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
9
-
Turn-on delay time
t d(on)
-
12
-
Rise time
tr
-
3
-
Turn-off delay time
t d(off)
-
13
-
Fall time
tf
-
3
-
Gate to source charge
Q gs
-
6
-
Gate charge at threshold
Q g(th)
-
3
-
Gate to drain charge
Q gd
-
1
-
Switching charge
Q sw
-
4
-
Gate charge total
Qg
-
11
15
Gate plateau voltage
V plateau
-
6
-
Output charge
Q oss
-
9
12
-
-
28
-
-
112
-
1.0
1.2
V
-
32
-
ns
-
29
-
nC
V DD=30 V, V GS=10 V,
I D=28 A, R G=3 Ω
ns
Gate Charge Characteristics 5)
V DD=30 V, I D=28 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
Rev.2.0
T C=25 °C
V GS=0 V, I F=28 A,
T j=25 °C
V R=30 V, I F=28A,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
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2008-11-26
IPD250N06N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
30
25
30
I D [A]
P tot [W]
20
20
15
10
10
5
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
0.5
102
1 µs
1
Z thJC [K/W]
I D [A]
10 µs
10
0.2
1
100 µs
0.1
0.05
0.02
0.01
0.1
single pulse
100
1 ms
DC
10-1
10-1
100
101
102
V DS [V]
Rev.2.0
0.01
0
0
0
0
0
0
10-6
10-5
10-4
10-3
10-2
10-1
t p [s]
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IPD250N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
120
48
5.5 V
10 V
6V
7V
8V
44
100
8V
40
R DS(on) [mΩ]
I D [A]
80
60
7V
40
36
32
28
6.5 V
24
6V
20
10 V
20
5.5 V
5V
4.5 V
0
0
1
2
3
16
4
0
20
40
V DS [V]
60
80
100
120
40
50
60
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
50
40
40
30
I D [A]
g fs [S]
30
20
20
10
10
175 °C
25 °C
0
0
0
2
4
6
8
Rev.2.0
0
10
20
30
I D [A]
V GS [V]
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IPD250N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=28 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
50
5
45
4
110 µA
35
V GS(th) [V]
R DS(on) [mΩ]
40
30
max
25
3
11µA
2
typ
20
1
15
10
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
100
175°C 98%
I F [A]
C [pF]
Coss
102
175 °C
25 °C
10
Crss
25°C 98%
101
100
1
0
20
40
60
Rev.2.0
0.0
0.5
1.0
1.5
2.0
V SD [V]
V DS [V]
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2008-11-26
IPD250N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=28 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12 V
48 V
V GS [V]
I AV [A]
8
10
6
4
150 °C
100 °C
25 °C
2
1
0
0.1
1
10
100
1000
0
2
t AV [µs]
4
6
8
10
12
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
68
Qg
66
V BR(DSS) [V]
64
62
60
V g s(th)
58
56
54
Q g(th)
Q sw
52
Q gs
50
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev.2.0
page 7
2008-11-26
IPD250N06N3 G
PG-TO252-3 (D-Pak)
Rev.2.0
page 8
2008-11-26
IPD250N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 9
2008-11-26