Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 5.3 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD053N06N3 G Package PG-TO252-3 Marking 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C2) 90 V GS=10 V, T C=100 °C 78 Unit A Pulsed drain current3) I D,pulse T C=25 °C 360 Avalanche energy, single pulse4) E AS I D=90 A, R GS=25 Ω 68 mJ Gate source voltage V GS ±20 V 1) 2) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=1.3 K/W the chip is able to carry 109 A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.0 page 1 2008-11-25 IPD053N06N3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Operating and storage temperature T j, T stg Value T C=25 °C IEC climatic category; DIN IEC 68-1 Parameter Unit 115 W -55 ... 175 °C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 1.3 minimal footprint - - 75 6 cm² cooling area 5) - - 50 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=58 µA 2 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=90 A - 4.2 5.3 mΩ Gate resistance RG - 1.2 - Ω Transconductance g fs 50 100 - S |V DS|>2|I D|R DS(on)max, I D=90 A 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.2.0 page 2 2008-11-25 IPD053N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 5000 6600 - 1100 1500 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 38 57 Turn-on delay time t d(on) - 24 - Rise time tr - 68 - Turn-off delay time t d(off) - 32 - Fall time tf - 9 - Gate to source charge Q gs - 28 - Gate charge at threshold Q g(th) - 15 - Gate to drain charge Q gd - 6 - Switching charge Q sw - 19 - Gate charge total Qg - 61 82 Gate plateau voltage V plateau - 5.7 - Output charge Q oss - 50 66 - - 90 - - 360 - 1.0 1.2 V - 52 - ns - 59 - nC V DD=30 V, V GS=10 V, I D=90 A, R G=1.6 Ω ns Gate Charge Characteristics 6) V DD=30 V, I D=90 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) Rev.2.0 T C=25 °C V GS=0 V, I F=90 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition page 3 2008-11-25 IPD053N06N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 100 120 80 60 80 I D [A] P tot [W] 100 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 µs 102 10 µs 1 0.5 Z thJC [K/W] I D [A] 100 µs 101 1 ms 10 ms 10 0.2 0.1 0.1 0.05 0 DC 0.02 0.01 single pulse 10 -1 10-1 0.01 100 101 102 0 0 0 0 0 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev.2.0 0 10-6 page 4 2008-11-25 IPD053N06N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 360 12 10 V 320 5V 8V 5.5 V 6V 7V 10 280 7V 8 200 R DS(on) [mΩ] I D [A] 240 6.5 V 160 6V 120 80 6 8V 10 V 4 5.5 V 2 40 5V 4.5 V 0 0 0 1 2 3 4 0 60 120 180 V DS [V] 240 300 360 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 150 125 160 100 I D [A] g fs [S] 120 75 80 50 40 175 °C 25 °C 25 0 0 0 2 4 6 8 Rev.2.0 0 40 80 120 160 200 I D [A] V GS [V] page 5 2008-11-25 IPD053N06N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=90 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 10 5 8 4 580 µA max V GS(th) [V] R DS(on) [mΩ] 6 typ 4 2 3 58µA 2 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss Coss 100 I F [A] 102 175°C 98% 25 °C 1000 C [pF] 103 175 °C 25°C 98% 10 100 Crss 101 1 10 0 20 40 60 Rev.2.0 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2008-11-25 IPD053N06N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=90 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 12 V 48 V 100 °C 150 °C 10 V GS [V] I AV [A] 8 25 °C 6 4 2 1 0 0.1 1 10 100 1000 0 20 t AV [µs] 40 60 80 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS 68 Qg 66 V BR(DSS) [V] 64 62 60 V g s(th) 58 56 54 Q g(th) Q sw 52 Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev.2.0 page 7 2008-11-25 IPD053N06N3 G PG-TO252-3 (D-Pak) Rev.2.0 page 8 2008-11-25 IPD053N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 9 2008-11-25