IPU135N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features V DS • Ideal for high frequency switching and sync. rec. 80 R DS(on),max • Optimized technology for DC/DC converters V 13.5 ID mΩ 50 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPU135N08N3 G 1 2 3 Package PG-TO251-3 Marking 135N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 50 T C=100 °C 39 Unit A Pulsed drain current2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse3) E AS I D=50 A, R GS=25 Ω 40 mJ Gate source voltage V GS ±20 V Power dissipation P tot 79 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 See figure 3 for more detailed information 3) See figure 13 for more detailed information 2) Rev. 2.1 page 1 2008-11-04 IPU135N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.9 minimal footprint - - 75 6 cm2 cooling area4) - - 50 80 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=33 µA 2 2.8 3.5 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 11.3 13.5 mΩ V GS=6 V, I D=25 A - 15.5 26 - 2 - Ω 26 51 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2008-11-04 IPU135N08N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1300 1730 - 353 469 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=40 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 15 - Turn-on delay time t d(on) - 12 - Rise time tr - 35 - Turn-off delay time t d(off) - 18 - Fall time tf - 5 - Gate to source charge Q gs - 7 - Gate to drain charge Q gd - 4 - - 8 - V DD=40 V, V GS=10 V, I D=45 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=40 V, I D=50 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 5.6 - Output charge Q oss - 25 34 nC - - 50 A - - 200 - 1.0 1.2 V - 50 - ns - 74 - nC V DD=40 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) Rev. 2.1 T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=40 V, I F=45A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2008-11-04 IPU135N08N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 60 50 60 I D [A] P tot [W] 40 40 30 20 20 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 102 100 0.5 Z thJC [K/W] I D [A] 10 µs 100 µs 1 ms 10 10 ms 1 0.2 0.1 0.05 0.02 10 -1 DC single pulse 100 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 2.1 0.01 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-11-04 IPU135N08N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 32 8V 10 V 5V 28 5.5 V 6V 7V 6.5 V 160 24 7V R DS(on) [mΩ] I D [A] 120 6.5 V 80 6V 20 16 8V 12 10 V 8 5.5 V 40 4 5V 4.5 V 0 0 0 1 2 3 4 5 0 40 80 V DS [V] 120 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 180 100 150 80 120 g fs [S] I D [A] 60 90 40 60 20 30 175 °C 25 °C 0 0 0 2 4 6 8 Rev. 2.1 0 20 40 60 80 100 120 140 I D [A] V GS [V] page 5 2008-11-04 IPU135N08N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 30 4 25 3 330 µA 33 µA V GS(th) [V] R DS(on) [mΩ] 20 max 15 typ 2 10 1 5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 25 °C 175 °C 10 I F [A] C [pF] 102 2 175 °C, max 25 °C, max Crss 10 1 101 100 100 0 20 40 60 80 V DS [V] Rev. 2.1 0 0.5 1 1.5 2 V SD [V] page 6 2008-11-04 IPU135N08N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 100 12 40 V 10 16 V 100 °C 25 °C 8 V GS [V] I AV [A] 150 °C 64 V 10 6 4 2 1 0 0.1 1 10 100 1000 0 5 t AV [µs] 10 15 20 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 90 V GS Qg 85 V BR(DSS) [V] 80 75 V g s(th) 70 65 Q g(th) Q sw Q gs 60 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.1 page 7 2008-11-04 IPU135N08N3 G PG-TO251-3: Outline Rev. 2.1 page 8 2008-11-04 IPU135N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2008-11-04