HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. • 43A, 1200V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49291. Ordering Information PART NUMBER • Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging PACKAGE HGTG11N120CN • 1200V Switching SOA Capability TO-247 BRAND JEDEC STYLE TO-247 E G11N120CN HGTP11N120CN TO-220AB 11N120CN HGT1S11N120CNS TO-263AB 11N120CN C COLLECTOR (BOTTOM SIDE METAL) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S11N120CNS9A. Symbol JEDEC TO-220AB (ALTERNATE VERSION) C COLLECTOR (FLANGE) G E G C E JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG11N120CN HGTP11N120CN HGT1S11N120CNS UNITS 1200 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 43 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 22 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 298 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 80 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC Package Body for 10s, see Tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs Maximum Lead Temperature for Soldering CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 20A, L = 400µH, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V - - 250 µA - 250 - µA - - 3 mA - 2.1 2.4 V - 2.8 3.5 V 6.0 6.8 - V - - ±250 nA 55 - - A - 10.4 - V VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = 1200V IC = 11A, VGE = 15V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 90µA, VCE = VGE VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 11A, VCE = 600V On-State Gate Charge ©2001 Fairchild Semiconductor Corporation QG(ON) IC = 11A, VCE = 600V HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 11A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) MIN TYP MAX UNITS - 23 26 ns - 12 16 ns - 180 240 ns - 190 230 ns - 0.4 0.5 mJ Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 0.95 1.3 mJ Turn-Off Energy (Note 5) EOFF - 1.3 1.6 mJ Current Turn-On Delay Time td(ON)I - 21 24 ns - 12 16 ns - 210 280 ns - 340 400 ns - 0.45 0.6 mJ Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 150oC ICE = 11A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) Turn-On Energy (Note 4) EON1 Turn-On Energy (Note 4) EON2 - 1.9 2.5 mJ Turn-Off Energy (Note 5) EOFF - 2.1 2.5 mJ Thermal Resistance Junction To Case RθJC - - 0.42 oC/W NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 45 VGE = 15V 40 35 30 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 60 50 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS TJ = 150oC, RG = 10Ω, L = 2mH, V CE = 960V TC = 75oC, VGE = 15V, IDEAL DIODE 100 50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.42oC/W, SEE NOTES 5 2 5 TC 75oC 75oC 110oC 110oC VGE 15V 12V 15V 12V 10 25 20 200 tSC 150 10 100 5 20 12 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) TC = 25oC 30 TC = 150oC 20 10 DUTY CYCLE < 0.5%, VGE = 12V 250µs PULSE TEST 0 2 4 6 TC = 25oC 40 TC = -55oC 30 TC = 150oC 20 10 DUTY CYCLE < 0.5%, VGE = 15V 250µs PULSE TEST 0 0 8 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.5 5 RG = 10Ω, L = 2mH, VCE = 960V 4 EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 50 16 15 50 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, VGE = 12V, VGE = 15V 3 2 1 TJ = 25oC, VGE = 12V, VGE = 15V 0 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 50 0 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT TC = -55oC ISC 15 ICE, COLLECTOR TO EMITTER CURRENT (A) 40 250 VCE = 840V, RG = 10Ω, TJ = 125oC ISC , PEAK SHORT CIRCUIT CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) 200 Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) Typical Performance Curves RG = 10Ω, L = 2mH, VCE = 960V 3.0 2.5 TJ = 150oC, VGE = 12V OR 15V 2.0 1.5 1.0 TJ = 25oC, VGE = 12V OR 15V 0.5 0 0 5 10 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 20 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Typical Performance Curves Unless Otherwise Specified (Continued) 40 50 RG = 10Ω, L = 2mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V 35 40 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 10Ω, L = 2mH, VCE = 960V 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 12V 30 20 10 TJ = 25oC OR TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 15V 15 0 0 10 5 15 20 0 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 20 700 RG = 10Ω, L = 2mH, VCE = 960V RG = 10Ω, L = 2mH, V CE = 960V 450 600 400 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 15 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 500 VGE = 12V, VGE = 15V, TJ = 150oC 350 300 250 500 TJ = 150oC, VGE = 12V OR 15V 400 300 200 200 150 TJ = 25oC, VGE = 12V OR 15V VGE = 12V, VGE = 15V, TJ = 25oC 100 100 0 10 5 0 20 15 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 VGE , GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 20V 250µs PULSE TEST 80 60 TC = 25oC 40 0 TC = 150oC 7 8 9 TC = -55oC 10 11 12 13 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 14 20 15 10 FIGURE 12. FALL vs COLLECTOR TO EMITTER CURRENT 100 20 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 IG(REF) = 1mA, RL = 54.5Ω, TC = 25oC 15 VCE = 1200V VCE = 800V 10 VCE = 400V 5 0 0 20 40 60 80 100 120 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Unless Otherwise Specified (Continued) 4 C, CAPACITANCE (nF) FREQUENCY = 1MHz 3 CIES 2 1 COES 0 CRES 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 DUTY CYCLE < 0.5%, TC = 110oC 250µs PULSE TEST 12 VGE = 15V 9 VGE = 10V 6 3 0 0 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 2 4 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 10-2 -5 10 SINGLE PULSE 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG11N120CND 90% 10% VGE EON2 EOFF L = 2mH VCE RG = 10Ω 90% + - ICE VDD = 960V FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation 10% td(OFF)I tfI trI td(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B