ETC HGT1S3N60B3S9A

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet
December 2001
7A, 600V, UFS Series N-Channel IGBTs
Features
The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25oC and 150oC.
• 7A, 600V, TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Formerly Developmental Type TA49192.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD3N60B3S
TO-252AA
G3N60B
HGT1S3N60B3S
TO-263AB
G3N60B3
HGTP3N60B3
TO-220AB
G3N60B3
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.
E
Symbol
JEDEC TO-252AA
C
COLLECTOR
(FLANGE)
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTD3N60B3S, HGT1S3N60B3S
HGTP3N60B3
UNITS
600
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
7.0
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
3.5
A
20
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
18A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
33.3
W
0.27
W/oC
100
mJ
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
260
oC
5
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
10
µs
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
20
28
-
V
-
-
250
µA
-
-
2.0
mA
-
1.8
2.1
V
-
2.1
2.5
V
4.5
5.4
6.0
V
-
-
±250
nA
18
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.9
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
18
22
nC
VGE = 20V
-
21
25
nC
-
18
-
ns
-
16
-
ns
-
105
-
ns
-
70
-
ns
-
66
75
µJ
-
88
160
µJ
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
IGES
VGE = ±20V
SSOA
TJ = 150oC
VCE = 600V
RG = 82Ω
VGE = 15V
L = 500µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
©2001 Fairchild Semiconductor Corporation
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 17)
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
trI
Current Turn-Off Delay Time
MIN
TYP
MAX
UNITS
-
16
-
ns
-
18
-
ns
-
220
295
ns
-
115
175
ns
-
130
140
µJ
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 17)
td(ON)I
Current Rise Time
TEST CONDITIONS
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
-
210
325
µJ
Thermal Resistance Junction To Case
RθJC
-
-
3.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
7
VGE = 15V
6
5
4
3
2
1
0
25
50
75
100
125
150
20
TJ = 150oC, RG = 82Ω, VGE = 15V, L = 500µH
18
16
14
12
10
8
6
4
2
0
0
TC , CASE TEMPERATURE (oC)
VGE
15V
10V
15V
10V
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 3.75oC/W, SEE NOTES
1
2
3
4
5
6
7
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
8
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
TC
75oC
75oC
110oC
110oC
10
1
300
400
500
700
600
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 82Ω, L = 1mH, V CE = 480V
100
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
100
16
45
VCE = 360V, RG = 82Ω, TJ = 125oC
14
40
ISC
12
35
10
30
8
25
tSC
6
20
4
10
11
12
13
14
15
15
ISC , PEAK SHORT CIRCUIT CURRENT (A)
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
14
Unless Otherwise Specified (Continued)
TC = -55oC
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
12
10
TC = 150oC
8
6
TC = 25oC
4
2
0
0
1
2
3
4
5
6
7
8
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
30
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
20
TC = 150oC
15
10
TC = 25oC
5
0
0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
2
3
4
5
6
7
8
9
10
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.7
0.6
RG = 82Ω, L = 1mH, VCE = 480V
0.6
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
TJ = 25oC, TJ = 150oC, VGE = 10V
0.5
0.4
0.3
0.2
0.1
TJ = 25oC, TJ = 150oC, VGE = 15V
1
2
3
4
5
6
7
RG = 82Ω, L = 1mH, VCE = 480V
0.5
TJ = 150oC; VGE = 10V OR 15V
0.4
0.3
0.2
0.1
TJ = 25oC; VGE = 10V OR 15V
0
0
1
8
2
3
5
4
6
7
8
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
80
45
RG = 82Ω, L = 1mH, VCE = 480V
RG = 82Ω, L = 1mH, V CE = 480V
40
70
TJ = 25oC, TJ = 150oC, VGE = 10V
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
TC = -55oC
25
35
30
25
20
60
TJ = 25oC, TJ = 150oC, VGE = 10V
50
40
TJ = 25oC, TJ = 150oC, VGE = 15V
30
20
15
TJ = 25oC, TJ = 150oC, VGE = 15V
10
10
1
2
3
4
5
6
7
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
8
1
2
3
4
5
6
7
8
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves
Unless Otherwise Specified (Continued)
140
RG = 82Ω, L = 1mH, VCE = 480V
225
RG = 82Ω, L = 1mH, VCE = 480V
TJ = 150oC, VGE = 15V
200
175
TJ = 150oC, VGE = 10V
150
125
120
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
250
TJ = 25oC, VGE = 15V
TJ = 150oC, VGE = 10V OR 15V
100
80
TJ = 25oC, VGE = 10V OR 15V
100
TJ = 25oC, VGE = 10V
75
60
3
2
1
5
4
7
6
8
1
VGE , GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
7
6
8
15
25
TC = -55oC
20
15
5
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
TC = 25oC
PULSE DURATION = 250µs
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
30
3
2
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = 150oC
10
5
Ig(REF) = 1mA, RL = 171Ω, TC = 25oC
12
9
6
VCE = 200V
VCE = 400V
VCE = 600V
3
0
0
5
6
7
8
9
10
11
12
13
14
15
0
5
10
VGE , GATE TO EMITTER VOLTAGE (V)
15
20
25
Qg , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
500
FREQUENCY = 1MHz
C, CAPACITANCE (pF)
400
CIES
300
200
COES
100
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
0.5
0.2
10-1
0.1
0.05
t1
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
PD
10-4
10-3
10-2
t2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
L = 1mH
90%
RHRD460
10%
VGE
EON
EOFF
RG = 82Ω
VCE
+
-
90%
VDD = 480V
ICE
10%
td(OFF)I
tfI
tfI
td(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 18. SWITCHING TEST WAVEFORMS
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated junction
temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM . Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 18. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF ; i.e., the collector current equals zero (ICE = 0).
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B