ETC HGT1S12N60B3S9A

HGTG12N60B3, HGTP12N60B3,
HGT1S12N60B3S
Data Sheet
April 2002
27A, 600V, UFS Series N-Channel IGBTs
Features
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
Formerly developmental type TA49171.
E
C
G
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60B3
TO-220AB
G12N60B3
HGTG12N60B3
TO-247
G12N60B3
HGT1S12N60B3S
TO-263AB
G12N60B3
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
HGT1S12N60B3S9A.
COLLECTOR
(FLANGE)
G
E
Symbol
JEDEC STYLE TO-247
C
E
C
G
G
E
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG12N60B3, HGTP12N60B3,
HGT1S12N60B3S
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
27
A
12
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
110
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
104
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
100
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
5
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
10
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, R G = 25Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = 600V
IC = 12A
VGE = 15V
-
-
V
-
250
µA
TC = 150oC
-
-
2.0
mA
TC = 25oC
TC = 150oC
-
1.6
2.1
V
-
1.7
2.5
V
4.5
4.9
6.0
V
IC = 250µA, VCE = VGE
VGE = ±20V
-
-
±250
nA
96
-
-
A
IC = 12A, VCE = 0.5 BVCES
-
7.3
-
V
VGE = 15V
-
51
60
nC
VGE = 20V
-
68
78
nC
-
26
-
ns
-
23
-
ns
-
150
-
ns
-
62
-
ns
Gate to Emitter Plateau Voltage
VGEP
On-State Gate Charge
Qg(ON)
IC = 12A
VCE = 300V
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC
ICE = 12A
VCE = 480V
VGE = 15V
RG = 25Ω
L = 1mH
Test Circuit (Figure 17)
Current Fall Time
trI
tfI
UNITS
-
TJ = 150oC, RG = 25Ω, VGE = 15V
L = 100µH, VCE = 600V
td(OFF)I
MAX
600
SSOA
Current Turn-Off Delay Time
TYP
TC = 25oC
Switching SOA
Current Rise Time
MIN
Turn-On Energy (Note 4)
EON1
-
150
-
µJ
Turn-On Energy (Note 4)
EON2
-
304
350
µJ
Turn-Off Energy (Note 3)
EOFF
-
250
350
µJ
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy (Note 4)
EON1
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 12A
VCE = 480V
VGE = 15V
RG = 25Ω
L = 1mH
Test Circuit (Figure 17)
MIN
TYP
MAX
UNITS
-
22
-
ns
-
23
-
ns
-
280
295
ns
-
112
175
ns
-
165
-
µJ
µJ
Turn-On Energy (Note 4)
EON2
-
500
525
Turn-Off Energy (Note 3)
EOFF
-
660
800
µJ
1.2
oC/W
Thermal Resistance Junction To Case
-
RθJC
-
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
30
VGE = 15V
25
20
15
10
5
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
©2002 Fairchild Semiconductor Corporation
150
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
100
TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
90
80
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
300
fMAX , OPERATING FREQUENCY (kHz)
TJ = 150oC, RG = 25Ω, L = 1mH, V CE = 480V
100
TC
VGE
75oC
75oC
110oC
110oC
15V
10V
15V
10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.2oC/W, SEE NOTES
1
2
10
3
20
30
16
14
90
ISC
12
80
10
70
8
60
6
50
tSC
4
40
2
10
11
60
TC = 150oC
40
TC = 25oC
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
10
0
0
2
4
6
8
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = -55oC
20
180
DUTY CYCLE <0.5%, VGE = 15V
160 PULSE DURATION = 250µs
14
15
30
TC = -55oC
140
120
100
TC = 150oC
80
60
TC = 25oC
40
20
0
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
8
10
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
RG = 25Ω, L = 1mH, VCE = 480V
2.5
TJ = 25oC, TJ = 150oC, VGE = 10V
2.0
1.5
1.0
0.5
TJ = 25oC, TJ = 150oC, VGE = 15V
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
30
EOFF, TURN-OFF ENERGY LOSS (mJ)
2.5
3.0
EON , TURN-ON ENERGY LOSS (mJ)
13
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
70
30
12
VGE , GATE TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
50
100
VCE = 360V, RG = 25Ω, TJ = 125oC
ISC , PEAK SHORT CIRCUIT CURRENT (A)
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
RG = 25Ω, L = 1mH, VCE = 480V
2.0
1.5
TJ = 150oC; VGE = 10V OR 15V
1.0
0.5
TJ = 25oC; VGE = 10V OR 15V
0
5
10
15
20
25
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves
Unless Otherwise Specified (Continued)
55
150
RG = 25Ω, L = 1mH, VCE = 480V
50
125 T = 25 oC, T = 150oC, V
J
J
GE = 10V
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
RG = 25Ω, L = 1mH, VCE = 480V
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
TJ = 25oC, TJ = 150oC, VGE = 15V
30
75
50
25
25
20
100
TJ = 25oC and TJ = 150oC, VGE = 15V
0
5
10
15
25
20
30
10
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
275
130
250
120
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
140
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
175
110
TJ = 150oC, VGE = 10V, VGE = 15V
100
90
150
80
125
70
TJ = 25oC, VGE = 10V OR 15V
60
5
10
15
20
5
30
25
10
VGE, GATE TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = -55oC
DUTY CYCLE <0.5%, VCE = 10V
160 PULSE DURATION = 250µs
TC = 25oC
140
120
100
TC = 150oC
80
60
40
20
5
6
7
8
9
10
11
12
13
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2002 Fairchild Semiconductor Corporation
25
30
14
15
Ig (REF) = 1mA, R L = 25Ω, TC = 25oC
12
VCE = 600V
9
6
VCE = 200V
VCE = 400V
3
0
4
20
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
15
180
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
0
30
RG = 25Ω, L = 1mH, VCE = 480V
RG = 25Ω, L = 1mH, VCE = 480V
100
25
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
300
200
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
225
15
0
5
10
15
20
25
30
35
40
45
50
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves
Unless Otherwise Specified (Continued)
2.50
FREQUENCY = 1MHz
CIES
C, CAPACITANCE (nF)
2.00
1.50
1.00
COES
0.50
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
0.5
0.2
0.1
10-1
0.05
t1
0.02
0.01
SINGLE PULSE
10 -2
10-5
PD
DUTY FACTOR, D = t1 / t2
t2
PEAK TJ = PD x ZθJC x RθJC + TC
10-4
10-3
10-2
10 -1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
HGTP12N60B3D
90%
10%
VGE
EON2
L = 1mH
EOFF
VCE
RG = 25Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
FIGURE 18. SWITCHING TEST WAVEFORMS
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM . Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2002 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC )/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 3) and the
conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON2 and E OFF are defined in the switching waveforms
shown in Figure 18. E ON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF ; i.e., the collector current equals zero
(ICE = 0).
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
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Bottomless™
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DOME™
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E2CMOSTM
EnSignaTM
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FACT Quiet Series™
FAST â
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC â
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench â
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER â UHC™
SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
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effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5