ETC HGTD7N60B3S9A

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet
January 2002
14A, 600V, UFS Series N-Channel IGBTs
Features
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC.
• 14A, 600V, TC = 25oC
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Formerly Developmental Type TA49190.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60B3S
TO-252AA
G7N60B
HGT1S7N60B3S
TO-263AB
G7N60B3
HGTP7N60B3
TO-220AB
G7N60B3
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,
HGTD7N60B3S9A.
COLLECTOR
(FLANGE)
G
E
Symbol
JEDEC TO-252AA
C
COLLECTOR
(FLANGE)
G
G
E
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
ALL TYPES
UNITS
600
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
14
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
7
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
35A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
60
W
0.476
W/ oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
2
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
12
µs
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.
2. VCE = 360V, TJ = 125oC, RG = 50Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
600
-
-
V
15
28
-
V
-
-
100
µA
-
-
2.0
mA
-
1.8
2.1
V
-
2.1
2.4
V
3.0
5.1
6.0
V
-
-
±100
nA
VCE = 480V
42
-
-
A
VCE = 600V
35
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.7
-
V
IC = IC110,
VCE = 0. 5BVCES
VGE = 15V
-
23
28
nC
VGE = 20V
-
30
37
nC
-
26
-
ns
-
21
-
ns
-
130
160
ns
tfI
-
60
80
ns
Turn-On Energy (Note 4)
EON1
-
72
-
µJ
Turn-On Energy (Note 4)
EON2
-
160
200
µJ
Turn-Off Energy (Note 3)
EOFF
-
120
200
µJ
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
Emitter to Collector Breakdown Voltage
BVECS
IC = 3mA, VGE = 0V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
IGES
VGE = ±20V
SSOA
TJ = 150oC
RG = 50Ω
VGE = 15V
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
©2002 Fairchild Semiconductor Corporation
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
IGBT and Diode Both at TJ = 25oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG = 50Ω, L = 2mH
Test Circuit (Figure 17)
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
-
24
-
ns
-
22
-
ns
-
230
295
ns
tfI
-
120
175
ns
Turn-On Energy (Note 4)
EON1
-
80
-
µJ
Turn-On Energy (Note 4)
EON2
-
310
350
µJ
Turn-Off Energy (Note 3)
EOFF
-
350
500
µJ
Thermal Resistance Junction To Case
RθJC
-
-
2.1
oC/W
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
TEST CONDITIONS
IGBT and Diode Both at TJ = 150oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG =50Ω, L = 2mH
Test Circuit (Figure 17)
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the Turn-On loss of the IGBT only. EON2
is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
16
VGE = 15V
14
12
10
8
6
4
2
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
©2002 Fairchild Semiconductor Corporation
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
50
TJ = 150oC, RG = 50Ω, VGE = 15V
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
TJ = 150oC, RG = 50Ω, L = 2mH, VCE = 480V
100
10
TC
VGE
75oC
75oC
110oC
110oC
15V
10V
15V
10V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 2.1oC/W, SEE NOTES
1
1
2
3
4
6
5
8
10
18
80
14
ISC
10
60
40
6
tSC
20
2
10
15
ICE, COLLECTOR TO EMITTER CURRENT (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE < 0.5%, VGE = 10V
20
TC = 150oC
TC = -55oC
15
TC = 25oC
10
5
0
0
1
2
3
4
5
6
7
8
30
TC = 150oC
TC = -55oC
20
TC = 25oC
10
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
0
1000
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON 2, TURN-ON ENERGY LOSS (µJ)
RG = 50Ω, L = 2mH, VCE = 480V
TJ = 150oC, VGE = 10V
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
400
3
5
7
9
11
13
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
1
2
3
4
5
6
7
8
15
RG = 50Ω, L = 2mH, V CE = 480V
800
TJ = 150oC, VGE = 10V AND 15V
600
400
200
TJ = 25oC, VGE = 10V AND 15V
0
1
15
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
1600
0
14
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
800
13
40
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1200
12
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
PULSE DURATION = 250µs
25
11
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
30
100
VCE = 360V, RG = 50Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
400
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
1
3
5
7
9
11
13
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves
140
RG = 50Ω, L = 2mH, VCE = 480V
RG = 50Ω, L = 2mH, VCE = 480V
120
50
TJ = 150oC, VGE = 10V
40
trI, RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
60
Unless Otherwise Specified (Continued)
TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
30
20
TJ = 150oC, VGE = 15V
10
1
3
5
7
9
100
TJ = 150oC, VGE = 10V
80
TJ = 25oC, VGE = 10V
60
40
20
13
11
0
15
TJ = 25oC and 150oC, VGE = 15V
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
TJ = 150oC, VGE = 15V
TJ = 150oC, VGE = 10V
150
TJ = 25oC, VGE = 15V
50
1
TJ = 150oC, VGE = 10V and 15V
80
3
5
7
TJ = 25oC, VGE = 10V and 15V
9
11
13
40
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
15
VGE , GATE TO EMITTER VOLTAGE (V)
TC = 25oC
16
TC = 150oC
8
TC = -55oC
8
10
12
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2002 Fairchild Semiconductor Corporation
3
5
7
9
11
13
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs
VCE = 10V
24
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
6
15
100
TJ = 25oC, VGE = 10V
0
13
60
100
32
11
RG = 50Ω, L = 2mH, V CE = 480V
RG = 50Ω, L = 2mH, VCE = 480V
200
40
9
7
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
5
120
250
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
14
Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC
12
VCE = 200V
9
VCE = 600V
VCE = 400V
6
3
0
0
4
8
12
16
20
24
28
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves
Unless Otherwise Specified (Continued)
1200
FREQUENCY = 1MHz
C, CAPACITANCE (pF)
1000
CIES
800
600
400
COES
200
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
DUTY CYCLE - DESCENDING ORDER
100
0.5
0.2
10-1
0.1
t1
0.05
0.02
0.01
PD
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-5
10-4
10-3
10-2
t2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
90%
L = 2mH
10%
VGE
RHRD660
EON2
EOFF
VCE
RG = 50Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td (ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
FIGURE 18. SWITCHING TEST WAVEFORMS
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 18. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for EOFF ;
i.e., the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2002 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. B