ONSEMI BC517RL1G

BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A.
• Sourced from process 05.
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Value
Units
VCEO
Collector-Emitter Voltage
Parameter
30
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
TJ, TSTG
Operating and Storage Junction Temperature Range
- Continuous
1.2
A
-55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 2.0mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100nA, IC = 0
10
V
ICBO
Collector Cut-off Current
VCB = 30V, IE = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE = 2.0V, IC = 20mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 0.1mA
1
V
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 5.0V
1.4
V
Thermal Characteristics T
a
Symbol
30,000
= 25°C unless otherwise noted
Parameter
Value
Units
PD
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2005 Fairchild Semiconductor Corporation
BC517 Rev. A
1
www.fairchildsemi.com
BC517 NPN Darlington Transistor
January 2005
BC517 NPN Darlington Transistor
Mechanical Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
(0.25)
+0.10
0.38 –0.05
0.38 –0.05
±0.20
3.86MAX
3.60
1.02 ±0.10
+0.10
1.27TYP
[1.27 ±0.20]
(R2.29)
Dimensions in Millimeters
2
BC517 Rev. A
www.fairchildsemi.com
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As used herein:
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with instructions for use provided in the labeling, can be
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15