INFINEON IGC99T120T6RM

IGC99T120T6RM
IGBT4 Medium Power Chip
FEATURES:
• 1200V Trench + Field Stop technology
• low switching losses
• soft turn off
• positive temperature coefficient
• easy paralleling
Chip Type
IGC99T120T6RM
VCE
ICn
1200V 100A
This chip is used for:
• medium power modules
C
Applications:
• medium power drives
G
Die Size
Package
10.39 x 9.5 mm 2
sawn on foil
E
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
10.39 x 9.5
7.987 x 8.923
mm 2
1.31 x 0.811
98.7 / 76.1
Thickness
120
µm
Wafer size
150
mm
90
grd
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
140
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Al, <500µm
Reject ink dot size
Recommended storage environment
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007
IGC99T120T6RM
MAXIMUM RATINGS
Parameter
Symbol
Collector-Emitter voltage , T j=25 °C
Value
Unit
1200
V
1)
A
VC E
DC collector current, limited by Tjmax
IC
Pulsed collector current, tp limited by Tjmax
Ic p u l s
300
A
Gate -Emitter voltage
VG E
±20
V
Operating junction temperature
Tj
-40 ... +17 5
°C
Short circuit data 2 ) V GE = 15V, V CC = 800V, Tvj = 150°C
tp
10
µs
Reverse bias safe operating area 2 ) (RBSOA)
IC max = 200A, VCE max = 1200V, Tvj max= 150°C
1)
depending on thermal properties of assembly
2)
not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C
Parameter
Symbol
Value
Conditions
min.
Collector-Emitter breakdown voltage
V(BR)CES
Collector-Emitter saturation voltage
Unit
typ.
max.
VGE =0V , IC= 3.8 m A
1200
VCE(sat)
VGE=15V, IC=100A
1.55
1.8
2.05
Gate -Emitter threshold voltage
VGE(th)
IC=3.8mA , VGE= VC E
5.0
5.8
6.5
Zero gate voltage collector current
ICES
VCE=1200V , VGE =0V
13
µA
Gate -Emitter leakage current
IGES
VC E=0V , VGE =20V
600
nA
Integrated gate resistor
RGint
V
Ω
7.5
ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization)
Parameter
Symbol
Conditions
Value
min.
typ.
Input capacitance
C iss
VC E = 2 5 V ,
6150
Output capacitance
C oss
V GE =0V,
405
C rss
f =1 M H z
345
Reverse transfer capacitance
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007
max.
Unit
pF
IGC99T120T6RM
SWITCHING CHARACTERISTICS inductive load (not subject to production test - verified by design
/characterization)
Parameter
Symbol
Turn-on delay time
td ( o n )
Rise time
tr
Conditions 1)
T j = 1 2 5°C
VC C =600V,
Value
min.
typ.
td ( o f f )
Fall time
tf
1)
Unit
tbd
tbd
ns
I C =10 0 A,
Turn-off delay time
max.
V GE =- 1 5 / 1 5 V ,
tbd
R G= - - - Ω
tbd
values also influenced by parasitic L- and C- in measurement and package.
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007
IGC99T120T6RM
CHIP DRAWING
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007
IGC99T120T6RM
FURTHER ELECTRICAL CHARACTERISTICS
This chip data sheet refers to the
device data sheet
tbd
DESCRIPTION
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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in question please contact your nearest Infineon Technologies Office.
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Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683B, Editi on 1 , 31.10 .2007