SIGC12T120E IGBT3 Power Chip Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: power modules C Applications: drives G Chip Type VCE IC Die Size Package SIGC12T120E 1200V 8A 3.54 x 3.5 mm2 sawn on foil E Mechanical Parameters Raster size 3.54 x 3.5 Emitter pad size (incl. gate pad) 2.028 x 2.028 Gate pad size 1.107 x 0.702 mm 2 Area total 12.4 Thickness 140 µm Wafer size 200 mm Max.possible chips per wafer Passivation frontside Pad metal Backside metal 2213 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500µm Reject ink dot size Recommended storage environment 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014 SIGC12T120E Maximum Ratings Parameter Symbol Value Unit 1200 V 1) A Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max Ic, puls 24 A Gate emitter voltage VGE 20 V Junction temperature range Tvj -40 ... +175 °C Operating junction temperature Tvj -40...+150 C tSC 10 µs Short circuit data 2) VGE = 15V, VCC = 900V, Tvj = 150°C I C , m a x = 16A, V C E , m a x = 1200V Reverse bias safe operating area 2 ) (RBSOA) Tvj 150 °C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization Static Characteristics (tested on wafer), Tvj =25 C Value Parameter Symbol Conditions Unit min. Collector-Emitter breakdown voltage V(BR)CES Collector-Emitter saturation voltage typ. max. VGE=0V , IC= 0.5 mA 1200 VCEsat VGE=15V, IC=8A 1.4 1.7 2.1 Gate-Emitter threshold voltage VGE(th) IC=300µA , VGE=VCE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V , VGE=0V 1.23 µA Gate-Emitter leakage current IGES VCE=0V , VGE=20V 120 nA Integrated gate resistor rG V -- Dynamic Characteristics (not subject to production test - verified by design / characterization), Tvj =25 C Parameter Symbol Conditions Value min. typ. Input capacitance Cies V C E = 25 V , 605 Output capacitance Coes V G E = 0V , 37 Reverse transfer capacitance Cres f= 1 MH z 29 max. Unit Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014 pF SIGC12T120E Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014 SIGC12T120E Chip Drawing E G E = Emitter G = Gate Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014 SIGC12T120E Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date 2.2 Wafer diameter change to 200 mm 06.07.2010 2.3 Additional basic types L7621M, L7621T, L7621E 27.06.2014 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014