CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM CY7C144AV CY7C006AV 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM 3.3 V 8 K / 16 K × 8 Dual-Port Static RAM Features ■ True dual-ported memory cells which allow simultaneous access of the same memory location ■ 8 K / 16 K × 8 organizations (CY7C144AV/CY7C006AV) ■ 0.35-micron complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ High-speed access: 25 ns ■ Low operating power ❐ Active: ICC = 115 mA (typical) ❐ Standby: ISB3 = 10 A (typical) ■ Fully asynchronous operation ■ Automatic power-down ■ Expandable data bus to 16 bits or more using Master/ Slave chip select when using more than one device ■ On-chip arbitration logic ■ Semaphores included to permit software handshaking between ports ■ INT flag for port-to-port communication ■ Pin select for Master or Slave ■ Available in 64-pin thin quad flat pack (TQFP) (7C006AV and 7C144AV) ■ Pb-free packages available Functional Description For a complete list of related documentation, click here. Logic Block Diagram R/WL R/WR CEL CER OEL OER [1] 8 8 I/O0L–I/O7L [2] A0L–A12–13L [2] I/O Control 13–14 Address Decode I/O Control Address Decode True Dual-Ported RAM Array 13–14 13–14 A0L–A12–13L CEL OEL R/WL SEML [1] I/O0R–I/O7R 13–14 [2] A0R–A12–13R [2] A0R–A12–13R CER OER R/WR SEMR Interrupt Semaphore Arbitration [3] [3] BUSYL INTL BUSYR INTR M/S Notes 1. I/O0–I/O7 for × 8 devices. 2. A0–A12 for 8K devices; A0–A13 for 16K devices. 3. BUSY is an output in master mode and an input in slave mode. Cypress Semiconductor Corporation Document Number: 38-06051 Rev. *J • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised September 14, 2015 CY7C144AV CY7C006AV Contents Pin Configurations ........................................................... 3 Selection Guide ................................................................ 4 Pin Definitions .................................................................. 4 Architecture ...................................................................... 4 Functional Overview ........................................................ 4 Read and Write Operations ......................................... 4 Interrupts ..................................................................... 5 Busy ............................................................................ 5 Master/Slave ............................................................... 5 Semaphore Operation ................................................. 5 Maximum Ratings ............................................................. 6 Operating Range ............................................................... 6 Electrical Characteristics ................................................. 6 Capacitance ...................................................................... 6 AC Test Loads and Waveforms ....................................... 7 Data Retention Mode ........................................................ 7 Timing ................................................................................ 7 Switching Characteristics ................................................ 8 Switching Waveforms .................................................... 10 Document Number: 38-06051 Rev. *J Non-Contending Read/Write .......................................... 16 Interrupt Operation Example ......................................... 16 Semaphore Operation Example .................................... 16 Ordering Information ...................................................... 17 8 K × 8 3.3 V Asynchronous Dual-Port SRAM .......... 17 16 K × 8 3.3 V Asynchronous Dual-Port SRAM ........ 17 Ordering Code Definitions ......................................... 17 Package Diagrams .......................................................... 18 Acronyms ........................................................................ 19 Document Conventions ................................................. 19 Units of Measure ....................................................... 19 Document History Page ................................................. 20 Sales, Solutions, and Legal Information ...................... 21 Worldwide Sales and Design Support ....................... 21 Products .................................................................... 21 PSoC® Solutions ...................................................... 21 Cypress Developer Community ................................. 21 Technical Support ..................................................... 21 Page 2 of 21 CY7C144AV CY7C006AV Pin Configurations A6L A5L 49 54 A7L A12L 56 55 A8L VCC 57 51 50 CEL NC A9L SEML 59 52 R/WL 60 53 OEL 62 61 A11L A10L I/O0L 63 58 I/O1L 64 Figure 1. 64-pin TQFP pinout (Top View) I/O2L 1 48 A4L I/O3L I/O4L 2 47 3 4 46 45 A3L A2L 5 44 A0L I/O6L I/O7L 6 43 7 42 INTL BUSYL GND M/S I/O5L GND A1L VCC 8 GND I/O0R I/O1R 9 10 11 38 INTR I/O2R 12 37 VCC 13 36 A0R A1R I/O3R I/O4R 14 15 35 34 A2R I/O5R 16 33 A4R 41 32 BUSYR A3R A6R A5R 30 31 A7R 29 28 40 39 A8R A9R 27 A11R A10R 24 25 26 A12R GND 23 22 CER NC 21 SEMR R/WR 18 19 20 OER I/O6R I/O7R 17 CY7C144AV (8 K × 8) A6L A5L 49 54 A7L A12L 56 55 51 50 VCC 57 A8L CEL A13L 59 52 SEML 60 A9L R/WL 53 OEL 62 61 A11L A10L I/O0L 63 58 I/O1L 64 Figure 2. 64-pin TQFP pinout (Top View) I/O2L 1 48 A4L I/O3L I/O4L 2 47 3 4 46 45 A3L A2L 5 44 A0L I/O6L I/O7L 6 43 7 42 INTL BUSYL GND M/S I/O5L GND A1L VCC 8 GND I/O0R I/O1R 9 10 11 38 INTR I/O2R 12 37 VCC 13 36 A0R A1R I/O3R I/O4R 14 15 35 34 A2R I/O5R 16 33 A4R Document Number: 38-06051 Rev. *J 41 32 30 31 A7R BUSYR A3R A6R A5R 29 A8R 25 26 A12R 28 24 27 23 GND 40 39 A9R 22 CER A13R A11R A10R 21 19 20 OER SEMR 18 I/O7R R/WR 17 I/O6R CY7C006AV (16 K × 8) Page 3 of 21 CY7C144AV CY7C006AV Selection Guide CY7C144AV/CY7C006AV -25 Description Maximum access time (ns) 25 Typical operating current (mA) 115 Typical standby current for ISB1 (mA) (Both ports TTL level) 30 Typical standby current for ISB3 (A) (Both ports CMOS level) 10 Pin Definitions Left Port Right Port Description CEL CER Chip enable R/WL R/WR Read/Write enable OEL OER Output enable A0L–A12/13L A0R–A12/13R Address (A0–A12 for 8K devices; A0–A13 for 16K devices) I/O0L–I/O7L I/O0R–I/O7R Data bus input/output (I/O0–I/O7 for × 8 devices) SEML SEMR Semaphore Enable INTL INTR Interrupt flag BUSYL BUSYR Busy flag M/S Master or Slave select VCC Power GND Ground NC No connect Architecture The CY7C144AV and CY7C006AV consist of an array of 8K and 16K words of 8 bits each of dual-port RAM cells, I/O and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same location, a BUSY pin is provided on each port. Two interrupt (INT) pins can be utilized for port-to-port communication. Two semaphore (SEM) control pins are used for allocating shared resources. With the M/S pin, the device can function as a master (BUSY pins are outputs) or as a slave (BUSY pins are inputs). The device also has an automatic power-down feature controlled by CE. Each port is provided with its own output enable control (OE), which allows data to be read from the device. Functional Overview The CY7C144AV and CY7C006AV are low-power CMOS 8 K / 16 K × 8 dual-port static RAMs. Various arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data. Two ports are provided, permitting independent, asynchronous access for reads and writes to any location in memory. The devices can be utilized as standalone 8-bit dual-port static RAMs or multiple devices can be combined in order to function as a 16-bit or wider Document Number: 38-06051 Rev. *J master/slave dual-port static RAM. An M/S pin is provided for implementing 16-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/graphics memory. Each port has independent control pins: Chip Enable (CE), Read or Write Enable (R/W), and Output Enable (OE). Two flags are provided on each port (BUSY and INT). BUSY signals that the port is trying to access the same location currently being accessed by the other port. The Interrupt flag (INT) permits communication between ports or systems by means of a mail box. The semaphores are used to pass a flag, or token, from one port to the other to indicate that a shared resource is in use. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power-down feature is controlled independently on each port by a Chip Select (CE) pin. Read and Write Operations When writing data must be set up for a duration of tSD before the rising edge of R/W in order to guarantee a valid write. A write operation is controlled by either the R/W pin (see Write Cycle No. 1 waveform) or the CE pin (see Write Cycle No. 2 waveform). Page 4 of 21 CY7C144AV CY7C006AV Required inputs for non-contention operations are summarized in Table 1 on page 16. If a location is being written to by one port and the opposite port attempts to read that location, a port-to-port flowthrough delay must occur before the data is read on the output; otherwise the data read is not deterministic. Data will be valid on the port tDDD after the data is presented on the other port. When reading the device, the user must assert both the OE and CE pins. Data will be available tACE after CE or tDOE after OE is asserted. If the user wishes to access a semaphore flag, then the SEM pin must be asserted instead of the CE pin and OE must also be asserted. Interrupts The upper two memory locations may be used for message passing. The highest memory location (1FFF for the CY7C144AV and 3FFF for the CY7C006AV) is the mailbox for the right port and the second-highest memory location (1FFE for the CY7C144AV and 3FFE for the CY7C006AV) is the mailbox for the left port. When one port writes to the other port’s mailbox, an interrupt is generated to the owner. The interrupt is reset when the owner reads the contents of the mailbox. The message is user defined. Each port can read the other port’s mailbox without resetting the interrupt. The active state of the busy signal (to a port) prevents the port from setting the interrupt to the winning port. Also, an active busy to a port prevents that port from reading its own mailbox and, thus, resetting the interrupt to it. If an application does not require message passing, do not connect the interrupt pin to the processor’s interrupt request input pin. The operation of the interrupts and their interaction with Busy are summarized in Table 2 on page 16. Busy The CY7C144AV and CY7C006AV provide on-chip arbitration to resolve simultaneous memory location access (contention). If both ports’ CEs are asserted and an address match occurs within tPS of each other, the busy logic will determine which port has access. If tPS is violated, one port will definitely gain permission to the location, but it is not predictable which port will get that permission. BUSY will be asserted tBLA after an address match or tBLC after CE is taken LOW. Master/Slave An M/S pin is provided in order to expand the word width by configuring the device as either a master or a slave. The BUSY output of the master is connected to the BUSY input of the slave. This will allow the device to interface to a master device with no external components. Writing to slave devices must be delayed until after the BUSY input has settled (tBLC or tBLA), otherwise, Document Number: 38-06051 Rev. *J the slave chip may begin a write cycle during a contention situation. When tied HIGH, the M/S pin allows the device to be used as a master and, therefore, the BUSY line is an output. BUSY can then be used to send the arbitration outcome to a slave. Semaphore Operation The CY7C144AV and CY7C006AV provide eight semaphore latches, which are separate from the dual-port memory locations. Semaphores are used to reserve resources that are shared between the two ports. The state of the semaphore indicates that a resource is in use. For example, if the left port wants to request a given resource, it sets a latch by writing a zero to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value will be available tSWRD + tDOE after the rising edge of the semaphore write. If the left port was successful (reads a zero), it assumes control of the shared resource, otherwise (reads a one) it assumes the right port has control and continues to poll the semaphore. When the right side has relinquished control of the semaphore (by writing a one), the left side will succeed in gaining control of the semaphore. If the left side no longer requires the semaphore, a one is written to cancel its request. Semaphores are accessed by asserting SEM LOW. The SEM pin functions as a chip select for the semaphore latches (CE must remain HIGH during SEM LOW). A0–2 represents the semaphore address. OE and R/W are used in the same manner as a normal memory access. When writing or reading a semaphore, the other address pins have no effect. When writing to the semaphore, only I/O0 is used. If a zero is written to the left port of an available semaphore, a one will appear at the same semaphore address on the right port. That semaphore can now only be modified by the side showing zero (the left port in this case). If the left port now relinquishes control by writing a one to the semaphore, the semaphore will be set to one for both sides. However, if the right port had requested the semaphore (written a zero) while the left port had control, the right port would immediately own the semaphore as soon as the left port released it. Table 3 on page 16 shows sample semaphore operations. When reading a semaphore, all data lines output the semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a write from the other port. If both ports attempt to access the semaphore within tSPS of each other, the semaphore will definitely be obtained by one side or the other, but there is no guarantee which side will control the semaphore. Page 5 of 21 CY7C144AV CY7C006AV DC input voltage [5] ............................. –0.5 V to VCC + 0.5 V Maximum Ratings Exceeding maximum ratings [4] may impair the useful life of the device. These user guidelines are not tested. Output current into outputs (LOW) ............................. 20 mA Static discharge voltage .......................................... > 2001 V Storage temperature ................................ –65 °C to +150 °C Latch-up current .................................................... > 200 mA Ambient temperature with Power applied .......................................... –55 °C to +125 °C Operating Range Supply voltage to ground potential ..............–0.5 V to +4.6 V DC voltage applied to Outputs in High Z state ........................ –0.5 V to VCC+ 0.5 V Range Ambient Temperature VCC 0 °C to +70 °C 3.3 V 300 mV Commercial Electrical Characteristics Over the Operating Range CY7C144AV/CY7C006AV Parameter Description -25 Min Typ 2.4 – Max Unit VOH Output HIGH voltage (VCC = 3.3 V) – V VOL Output LOW voltage – 0.4 V VIH Input HIGH voltage 2.0 – V VIL Input LOW voltage – 0.8 V IOZ Output leakage current 10 A ICC Operating current (VCC = Max., IOUT = 0 mA) Outputs Disabled Commercial – 115 165 mA ISB1 Standby current (Both ports TTL level) CEL & CER VIH, f = fMAX [6] Commercial – 30 40 mA ISB2 Standby current (One port TTL level) CEL | CER VIH, f = fMAX [6] Commercial – 65 95 mA ISB3 Standby current (Both ports CMOS level) CEL & CER VCC – 0.2 V, f = 0 [6] Commercial – 10 500 A ISB4 Standby current (One port CMOS level) CEL | CER VIH, f = fMAX [6] Commercial – 60 80 mA Max Unit 10 pF 10 pF –10 Capacitance Parameter [7] Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 °C, f = 1 MHz, VCC = 3.3 V Notes 4. The Voltage on any input or I/O pin can not exceed the power pin during power-up. 5. Pulse width < 20 ns. 6. fMAX = 1/tRC. All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3. 7. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-06051 Rev. *J Page 6 of 21 CY7C144AV CY7C006AV AC Test Loads and Waveforms Figure 3. AC Test Loads and Waveforms 3.3 V OUTPUT R1 = 590 OUTPUT C = 30 pF 3.3 V RTH = 250 R1 = 590 C = 30 pF OUTPUT R2 = 435 C = 5 pF VTH = 1.4 V (a) Normal Load (Load 1) (b) Thévenin Equivalent (Load 1) ALL INPUT PULSES 3.0V GND 10% (c) Three-State Delay(Load 2) (Used for tLZ, tHZ, tHZWE & tLZWE including scope and jig) 90% 10% 90% R2 = 435 3 ns 3 ns Data Retention Mode The CY7C144AV and CY7C006AV are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules ensure data retention: 1. Chip enable (CE) must be held HIGH during data retention, within VCC to VCC – 0.2 V. 2. CE must be kept between VCC – 0.2 V and 70% of VCC during the power-up and power-down transitions. 3. The RAM can begin operation > tRC after VCC reaches the minimum operating voltage (3.0 Volts). Timing Figure 4. Timing Data Retention Mode VCC CE Parameter ICCDR1 3.0 V VCC 2.0 V 3.0 V VCC to VCC – 0.2 V Test Conditions [8] @ VCCDR = 2 V tRC V IH Max Unit 50 A Note 8. CE = VCC, VIN = GND to VCC, TA = 25 °C. This parameter is guaranteed but not tested. Document Number: 38-06051 Rev. *J Page 7 of 21 CY7C144AV CY7C006AV Switching Characteristics Over the Operating Range CY7C144AV/CY7C006AV Parameter [9] Description Unit -25 Min Max READ CYCLE tRC Read cycle time 25 – ns tAA Address to data valid – 25 ns tOHA Output hold from address change 3 – ns tACE[10] CE LOW to data valid – 25 ns tDOE OE LOW to data valid – 13 ns tLZOE [11, 12] OE Low to Low Z 3 – ns tHZOE[11, 12] OE HIGH to High Z – 15 ns tLZCE[11, 12] tHZCE[11, 12] CE LOW to Low Z 3 – ns CE HIGH to High Z – 15 ns tPU CE LOW to power-up 0 – ns tPD CE HIGH to power-down – 25 ns WRITE CYCLE tWC Write cycle time 25 – ns tSCE[10] CE LOW to write end 20 – ns tAW Address valid to write end 20 – ns tHA Address hold from write end 0 – ns tSA[10] Address set-up to write start 0 – ns tPWE Write pulse width 20 – ns tSD Data set-up to write end 15 – ns tHD Data hold from write end 0 – ns tHZWE R/W LOW to High Z – 15 ns tLZWE R/W HIGH to Low Z 3 – ns tWDD[13] Write pulse to data delay – 50 ns tDDD[13] Write data valid to read data valid – 35 ns Notes 9. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOI/IOH and 30-pF load capacitance. 10. To access RAM, CE = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time. 11. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 12. Test conditions used are Load 3. 13. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform. Document Number: 38-06051 Rev. *J Page 8 of 21 CY7C144AV CY7C006AV Switching Characteristics (continued) Over the Operating Range CY7C144AV/CY7C006AV Parameter [9] Description Unit -25 Min Max BUSY TIMING tBLA BUSY LOW from address match – 20 ns tBHA BUSY HIGH from address mismatch – 20 ns tBLC BUSY LOW from CE LOW – 20 ns tBHC BUSY HIGH from CE HIGH – 17 ns tPS Port set-up for priority 5 – ns tWB R/W HIGH after BUSY (Slave) 0 – ns tWH R/W HIGH after BUSY HIGH (Slave) 17 – ns tBDD[14] BUSY HIGH to data valid – 25 ns INTERRUPT TIMING tINS INT set time – 20 ns tINR INT reset time – 20 ns SEMAPHORE TIMING tSOP SEM flag update pulse (OE or SEM) 12 – ns tSWRD SEM flag write to read time 5 – ns tSPS SEM flag contention window 5 – ns tSAA SEM address access time – 25 ns Note 14. tBDD is a calculated parameter and is the greater of tWDD–tPWE (actual) or tDDD–tSD (actual). Document Number: 38-06051 Rev. *J Page 9 of 21 CY7C144AV CY7C006AV Switching Waveforms Figure 5. Read Cycle No. 1 (Either Port Address Access) [15, 16, 17] tRC ADDRESS tOHA DATA OUT tAA tOHA PREVIOUS DATA VALID DATA VALID Figure 6. Read Cycle No. 2 (Either Port CE/OE Access) [15, 18, 19] tACE CE tHZCE tDOE OE tHZOE tLZOE DATA VALID DATA OUT tLZCE tPU tPD ICC CURRENT ISB Figure 7. Read Cycle No. 3 (Either Port) [15, 17, 18, 19] tRC ADDRESS tOHA tAA tLZCE tABE CE tHZCE tACE tLZCE DATA OUT Notes 15. R/W is HIGH for read cycles. 16. Device is continuously selected CE = VIL. This waveform cannot be used for semaphore reads. 17. OE = VIL. 18. Address valid prior to or coincident with CE transition LOW. 19. To access RAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH, SEM = VIL. Document Number: 38-06051 Rev. *J Page 10 of 21 CY7C144AV CY7C006AV Switching Waveforms (continued) Figure 8. Write Cycle No. 1 (R/W Controlled Timing) [20, 21, 22, 23] tWC ADDRESS tHZOE [24] OE tAW CE [25] tPWE[23] tSA tHA R/W tHZWE[24] tLZWE Note 26 Note 26 DATA OUT tSD tHD DATA IN Figure 9. Write Cycle No. 2 (CE Controlled Timing) [20, 21, 22, 27] tWC ADDRESS tAW CE [25] tSA tSCE tHA R/W tSD tHD DATA IN Notes 20. R/W must be HIGH during all address transitions. 21. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM. 22. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle. 23. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE. 24. Transition is measured 500 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested. 25. To access RAM, CE = VIL, SEM = VIH. 26. During this period, the I/O pins are in the output state, and input signals must not be applied. 27. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state. Document Number: 38-06051 Rev. *J Page 11 of 21 CY7C144AV CY7C006AV Switching Waveforms (continued) Figure 10. Semaphore Read after Write Timing, either Side [28] tSAA A 0–A 2 VALID ADRESS VALID ADRESS tAW tACE tHA SEM tOHA tSCE tSOP tSD I/O 0 DATAIN VALID tSA tPWE DATAOUT VALID tHD R/W tSWRD tDOE tSOP OE WRITE CYCLE READ CYCLE Figure 11. Timing Diagram of Semaphore Contention [29, 30, 31] A0L –A2L MATCH R/WL SEM L tSPS A 0R –A 2R MATCH R/WR SEM R Notes 28. CE = HIGH for the duration of the above timing (both write and read cycle). 29. I/O0R = I/O0L = LOW (request semaphore); CER = CEL = HIGH. 30. Semaphores are reset (available to both ports) at cycle start. 31. If tSPS is violated, the semaphore will definitely be obtained by one side or the other, but which side will get the semaphore is unpredictable. Document Number: 38-06051 Rev. *J Page 12 of 21 CY7C144AV CY7C006AV Switching Waveforms (continued) Figure 12. Timing Diagram of Read with BUSY (M/S = HIGH) [32] tWC ADDRESSR MATCH tPWE R/WR tSD DATA INR tHD VALID tPS ADDRESSL MATCH tBLA tBHA BUSYL tBDD tDDD DATA OUTL VALID tWDD Figure 13. Write Timing with Busy Input (M/S = LOW) tPWE R/W BUSY tWB tWH Note 32. CEL = CER = LOW. Document Number: 38-06051 Rev. *J Page 13 of 21 CY7C144AV CY7C006AV Switching Waveforms (continued) Figure 14. Busy Timing Diagram No.1 (CE Arbitration) [33] CELValid First: ADDRESS L,R ADDRESS MATCH CEL tPS CER tBLC tBHC BUSYR CER Valid First: ADDRESS L,R ADDRESS MATCH CER tPS CE L tBLC tBHC BUSY L Figure 15. Busy Timing Diagram No.2 (Address Arbitration) [33] Left Address Valid First tRC or tWC ADDRESS L ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESSR tBLA tBHA BUSY R Right Address Valid First: tRC or tWC ADDRESSR ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESSL tBLA tBHA BUSY L Note 33. If tPS is violated, the busy signal will be asserted on one side or the other, but there is no guarantee to which side BUSY will be asserted. Document Number: 38-06051 Rev. *J Page 14 of 21 CY7C144AV CY7C006AV Switching Waveforms (continued) Figure 16. Interrupt Timing Diagrams Left Side Sets INTR : ADDRESSL tWC WRITE 1FFF/3FFF (See Functional Description) tHA[34] CE L R/W L INT R tINS [35] Right Side Clears INT R : tRC READ 1FFF/3FFF (See Functional Description) ADDRESSR CE R tINR [35] R/WR OE R INTR Right Side Sets INT L: tWC ADDRESSR WRITE 1FFE/3FFE (See Functional Description) tHA[34] CE R R/W R INT L [35] tINS Left Side Clears INT L: tRC READ 1FFE/3FFE ADDRESSR (See Functional Description) CE L tINR[35] R/W L OE L INT L Notes 34. tHA depends on which enable pin (CEL or R/WL) is deasserted first. 35. tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last. Document Number: 38-06051 Rev. *J Page 15 of 21 CY7C144AV CY7C006AV Non-Contending Read/Write Table 1. Non-Contending Read/Write Inputs Outputs Operation CE R/W OE SEM H X X H High Z Deselected: Power-down H H L L Data out Read data in semaphore flag X X H X High Z I/O lines disabled X L Data in Write into semaphore flag H I/O0–I/O7 L H L H Data out Read L L X H Data in Write L X X L Not allowed Interrupt Operation Example Table 2. Interrupt Operation Example (assumes BUSYL = BUSYR = HIGH) Function Left Port R/WL CEL Right Port OEL A0L–13L INTL R/WR CER OER A0R–13R INTR X X X X X L[37] X L L 1FFF/3FFF[36] H[38] X X Set Right INTR flag L L X 1FFF/3FFF[36] Reset Right INTR flag X X X X X X X L[38] L L X 1FFE/3FFE[36] L 1FFE/3FFE[36] H[37] X X X X Set Left INTL flag Reset Left INTL flag X X X L Semaphore Operation Example Table 3. Semaphore Operation Example Function I/O0–I/O7 Left I/O0–I/O7 Right Status No action 1 1 Semaphore free Left port writes 0 to semaphore 0 1 Left Port has semaphore token Right port writes 0 to semaphore 0 1 No change. Right side has no write access to semaphore Left port writes 1 to semaphore 1 0 Right port obtains semaphore token Left port writes 0 to semaphore 1 0 No change. Left port has no write access to semaphore Right port writes 1 to semaphore 0 1 Left port obtains semaphore token Left port writes 1 to semaphore 1 1 Semaphore free Right port writes 0 to semaphore 1 0 Right port has semaphore token Right port writes 1 to semaphore 1 1 Semaphore free Left port writes 0 to semaphore 0 1 Left port has semaphore token Left port writes 1 to semaphore 1 1 Semaphore free Notes 36. See Functional Description for specific addresses by device part number. 37. If BUSYL = L, then no change. 38. If BUSYR = L, then no change. Document Number: 38-06051 Rev. *J Page 16 of 21 CY7C144AV CY7C006AV Ordering Information 8 K × 8 3.3 V Asynchronous Dual-Port SRAM Speed (ns) 25 Package Name Ordering Code CY7C144AV-25AXC A65 Package Type 64-pin TQFP (Pb-free) Operating Range Commercial 16 K × 8 3.3 V Asynchronous Dual-Port SRAM Speed (ns) 25 Package Name Ordering Code CY7C006AV-25AXC A65 Package Type 64-pin TQFP (Pb-free) Operating Range Commercial Ordering Code Definitions CY 7 C XXX AV - 25 A X C Temperature Range: C = Commercial X = Pb-free (RoHS Compliant) Package Type: A = 64-pin TQFP Speed Grade: 25 ns AV = 3.3 V Part Identifier: XXX = 144 or 006 144 = 8 K × 8 006 = 16 K × 8 Technology Code: C = CMOS Marketing Code: 7 = Dual Port SRAM Company ID: CY = Cypress Document Number: 38-06051 Rev. *J Page 17 of 21 CY7C144AV CY7C006AV Package Diagrams Figure 17. 64-pin TQFP (14 × 14 × 1.4 mm) A64SA Package Outline, 51-85046 51-85046 *G Document Number: 38-06051 Rev. *J Page 18 of 21 CY7C144AV CY7C006AV Acronyms Acronym Document Conventions Description Units of Measure CE Chip Enable CMOS Complementary Metal Oxide Semiconductor °C degree Celsius I/O Input/Output MHz megahertz OE Output Enable A microampere SRAM Static Random Access Memory mA milliampere TQFP Thin Quad Flat Pack mm millimeter TTL Transistor-Transistor Logic mV millivolt ns nanosecond ohm Document Number: 38-06051 Rev. *J Symbol Unit of Measure % percent pF picofarad V volt W watt Page 19 of 21 CY7C144AV CY7C006AV Document History Page Document Title: CY7C144AV/CY7C006AV, 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM Document Number: 38-06051 Rev. ECN No. Issue Date Orig. of Change ** 110203 12/02/01 SZV Change from Spec number: 38-00837 to 38-06051 *A 122301 12/27/02 RBI Updated Maximum Ratings (Added Power up requirements to Maximum Ratings Information). Description of Change *B 237623 See ECN YDT Updated Features (Removed cross information). *C 373615 See ECN PCX Added Pb-Free Logo Updated Ordering Information (Added Pb-free parts to ordering information namely CY7C144AV-25AXC, CY7C144AV-25JXC, CY7C006AV-25AXC). *D 2896210 03/22/2010 RAME Updated Ordering Information. Updated Package Diagrams. *E 3161515 02/04/2011 ADMU Removed information for parts namely CY7C138AV, CY7C139AV, CY7C145AV, CY7C016AV, CY7C007AV, CY7C017AV across the document. Updated Ordering Information (Removed CY7C145AV-20JC). Updated Package Diagrams. *F 3352067 08/23/2011 ADMU Updated Features. Updated Operating Range (Removed industrial specification rows). Updated Electrical Characteristics (Removed industrial specification rows). Updated to new template. *G 3402091 10/12/2011 ADMU Updated Ordering Information (Removed pruned part CY7C144AV-25AC). Updated Package Diagrams. *H 3699185 08/01/2012 SMCH Updated title to read as “CY7C144AV/CY7C006AV, 3.3 V 8 K / 16 K × 8 Asynchronous Dual-Port Static RAM”. Updated Switching Characteristics (Removed the Note “Test conditions used are Load 3.” and its reference, removed the Note “Test conditions used are Load 2.” and its reference, removed the Note “This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.” and its reference). Updated Switching Waveforms (Updated Figure 14). *I 4581667 11/27/2014 SMCH Updated Functional Description: Added “For a complete list of related documentation, click here.” at the end. Updated Package Diagrams: spec 51-85046 – Changed revision from *E to *F. *J 4918791 09/14/2015 VINI Document Number: 38-06051 Rev. *J Updated Package Diagrams: spec 51-85046 – Changed revision from *F to *G. Updated to new template. Completing Sunset Review. Page 20 of 21 CY7C144AV CY7C006AV Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Automotive cypress.com/go/automotive Clocks & Buffers Interface Lighting & Power Control Memory cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/memory PSoC cypress.com/go/psoc Touch Sensing cypress.com/go/touch USB Controllers Wireless/RF psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP Cypress Developer Community Community | Forums | Blogs | Video | Training Technical Support cypress.com/go/support cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2001-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 38-06051 Rev. *J Revised September 14, 2015 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 21 of 21