IC Transistors SMD Type AMS9013 NPN Transistors SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent hFE linearity 0.4 3 Features 1 0.55 Collector Current :IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max 40 Unit V Collector - base breakdown voltage VCBO Ic= 100 A Collector - emitter breakdown voltage VCEO Ic= 0.1mA Emitter - base breakdown voltage VEBO IE=100 A Collector cut - off current ICBO VCB=40 V , IE=0 0.1 A Collector cut -off current ICEO VCE=20V , IB=0 0.1 A Emitter cut - off current IEBO 0.1 A DC current gain IE=0 IB=0 25 V IC=0 5 V VEB= 5V , IC=0 hFE VCE=1V, IC= 50mA 120 VCE=1V, IC=500mA 40 Collector - emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA Base - emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA Transition frequency VCE=6V, IC= 20mA,f=30MHz fT hFE Classification J3 Marking Rank L H J hFE 120 to 200 200 to 350 300 to 400 1 400 0.6 1.2 150 V V MHz IC Transistors SMD Type AMS9013 Typical Characteristics Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.4 Current Gain Bandwidth Product Fig.3 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage 2