TYSEMI 2SD882

Transistors
IC
SMD Type
Product specification
2SD882
Features
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
6
V
Collector Current to Continuous
IC
3
A
Collector Dissipation
Pc
0.5
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
Ic=100uA ,IE=0
40
V
Collector-emitter breakdown voltage
VCEO
IC= 10 mA , IB=0
30
V
Emitter-base breakdown voltage
VEBO
IE= 100 uA ,IC=0
6
V
Collector cut-off current
ICBO
VCB=40 V , IE=0
1
uA
Collector cut-off current
ICEO
VCE=30 V , IB=0
10
uA
Emitter cut-off current
IEBO
VEB=6V , IC=0
1
uA
DC current gain
hFE
VCE= 2V, IC= 1A
60
VCE=2V, IC= 100mA
32
400
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB= 0.2A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB= 0.2A
1.5
V
Transition frequency
fT
VCE=5 V, IC=0.1mA,f = 10MHz
50
MHz
hFE Classification
Rank
R
O
P
E
hFE
60 120
100 200
160 320
200 400
http://www.twtysemi.com
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4008-318-123
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