Transistors Transistor T SMD Type Product specification KST8550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Collector Current: IC=-1.5A 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1.5 A W Collector Power Dissipation PC 0.3 Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100 A, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100 A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A DC current gain hFE VCE=-1V, IC=-100mA 120 VCE=-1V, IC=-800mA 40 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V -1.55 V Base-emitter positive favor voltage VBEF IB=-1A output capacitance Cob VCB=-10V,IE=0,f=1MHz Transition frequency fT VCE= -10V, IC= -50mA,f=30MHz 20 100 pF MHz hFE Classification Y2 Marking Rank L H J hFE 120 200 200 350 300 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors Transistor T SMD Type Product specification KST8550 Typical Characteristics Fig.1 Static Characteristic Fig.3 Base Emitter ON Voltage Fig.5 Current Gain Bandwidth Product http://www.twtysemi.com [email protected] Fig.2 DC Current Gain Fig.4 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Fig.6 Collector Output Capacitance 4008-318-123 2 of 2