TYSEMI KST8050S

Transistors
Transistor
T
SMD Type
Product specification
KST8050S
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
Collector Current: IC=0.5A
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
0.5
A
Collector Dissipation
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC = 100 ìA , IE = 0
40
V
Collector-emitter breakdown voltage
VCEO
IC = 1mA , IB = 0
25
V
Emitter-base Breakdown voltage
VEBO
IE = 100 ìA , IC = 0
5
Collector-base cut-off current
ICBO
VCB = 40 V , IE = 0
0.1
A
Collector-emitter cut-off current
ICEO
VCE = 20 V , IB = 0
0.1
A
Emitter-base cut-off current
IEBO
VEB = 5 V , IC = 0
0.1
A
DC current gain
hFE
VCE = 1 V , IC = 50 mA
120
VCE = 1 V , IC = 500 mA
50
V
350
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA , IB = 50 mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA , IB = 50 mA
1.2
V
Transition frequency
fT
VCE = 6 V , IC = 20 mA , f = 30 MHz
150
MHz
hFE Classification
J3Y
Marking
Rank
L
H
hFE
120 200
200 350
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
Transistor
T
SMD Type
Product specification
KST8050S
Typical Characteristics
Fig.1 Static Characteristic
Fig.3 Base-Emitter Saturation Voltage
Fig.2 DC Current Gain
Fig.4 Current Gain Bandwidth Product
Callector-Emitter Saturation Voltage
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2