Quality Management ITM Semiconductor Battery Protect Solution IC ELI501 ■ Contents 1. Features Page 1 2. Outline Page 2 3. Pin Assignment Page 3 4. Block Diagram Page 3 5. Absolute Maximum Rating Page 4 6. Electrical Characteristics Page 4 7. Measuring Circuit Page 7 8. Operation Page 8 1) Overcharge detector (VD1) Page 8 2) Overdischarge detector (VD2) Page 8 3) Discharge overcurrent detector, Short detector (VD3, Short Detector) Page 9 9. Application Circuit Page 10 10. Timing Chart Page 11 11. Packing Spec Page 13 12. Package Description Page 15 13. Marking Contents Page 16 Rev. 07 [2012. 07. 02] Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Features 1. The protection IC and The Dual-Nch MOSFET to use common Drain are integrated into One-packaging IC. 2. Reduced Pin-Count by fully connecting internally. 3. Application Part 1) Protection IC ① Uses high withstand voltage CMOS process. - The charger section can be connected up to absolute maximum rating 24V. ② Detection voltage precision - Overcharge detection voltage ±60㎷ (Ta=25℃) - Overdischarge detection voltage ±110㎷ (Ta=25℃) - Discharging overcurrent detection voltage ±35㎷ (Ta=25℃) ③ Built-in detection delay times - Overcharge detection delay time Min 0.001s / Typ 0.08s / Max 0.20s (Ta=25℃) - Overdischarge detection delay time) Min 1㎳ / Typ 40㎳ / Max 100㎳ (Ta=25℃) - Discharging overcurrent detection delay time) Min 1㎳ / Typ 10㎳ / Max 30㎳ (Ta=25℃) - Short detection delay time) Typ 300㎲ / Max 800㎲ (Ta=25℃) ④ With abnormal charger detection function ⑤ 0V charge function is allowed ⑥ Auto Wake-up function is not allowed 2) FET ① Using advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V while retaining a 12V VGS(MAX). ② Common drain configuration ③ General characteristics - VDS (V) = 20V - ID (A) = 6A - RSS(ON) < 60mΩ (VGS = 4.5V, ID = 1A) Rev. 07 [2012. 07. 02] -1- Quality Management ITM Semiconductor Battery Protect Solution IC ELI501 ■ Outline This is a battery protect solution IC which is integrated with built-in the protection IC to use a lithium ion/lithium polymer secondary batteries developed for 1-cell series and Dual-Nch MOSFET. It functions to protect the battery by detecting overcharge, overdischarge, discharge overcurrent and other abnormalities as turning off internal Nch MOSFET. The protection IC is composed of three voltage detectors, short detection circuit, reference voltage sources, oscillator, counter circuit and logical circuits. The COUT pin (charge FET control pin) and DOUT pin (discharge FET control pin) outputs are CMOS output, and can drive the internal Nch MOSFET directly. The COUT output becomes low level after delay time fixed in the IC if overcharge is detected. The DOUT output becomes low level after delay time fixed in the IC if overdischarge, discharge overcurrent or short is detected. On overcharge state, if the VDD voltage is less than the overcharge release voltage, the COUT output becomes high level after delay time fixed in the IC. On overdischarge state, if the voltage of the battery rises more than the overdischarge detection voltage with connecting the charger, the DOUT output becomes high level after delay time fixed in the IC. Charging current can be supplied to the battery discharged up to 0V. Once discharge overcurrent or short have been detected, if the state of discharge overcurrent or short is released by opening the loads, the DOUT output becomes high level after delay time fixed in the IC. On overdischarge state, the supply current is reduced as less as possible. Rev. 07 [2012. 07. 02] -2- Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Pin Assignment [ Package: TEP-5L ] <Top view> 5 1 4 3 2 <Bottom view> 1 TP (N.C) 2 Source 1(same as VSS) 3 Source 2 4 VDD 5 V― 6 Drain 6 ■ Block Diagram Protection IC Oscillator VDD Counter TP (N.C) Logic Circuit VD1 Overcharge Level Shift Delay Short Logic Circuit VD2 Overdischarge Charger V－ VD3 Discharge Overcurrent VSS DOUT Gate1 Gate2 Source1 COUT Common Drain Dual-Nch MOSFET Source2 Drain Rev. 07 [2012. 07. 02] -3- Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Absolute Maximum Rating ※ TOPR=25℃, Source1(VSS)=0V Symbol Rating Unit Supply Voltage Item VDD -0.3 ~ 10 V V- Terminal Input Voltage V- VDD-24 ~ VDD+0.3 V COUT Terminal Output Voltage VCOUT VDD-24 ~ VDD+0.3 V DOUT Terminal Output Voltage VDOUT VSS-0.3 ~ VDD+0.3 V Storage Temperature TSTG -40 ~ 125 ℃ Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ■ Electrical Characteristics ※ TOPR=25℃ Item Symbol Measure Condition Min. Typ. Max. Unit *1 Operating Input Voltage VDD1 VDD - VSS 1.5 - 8.0 V A Minimum Operating Voltage for 0V Charging VST VDD－V-, VDD-VSS=0V - - 1.5 V A COUT Pin Nch ON Voltage VOL1 - - 0.1 0.5 V - COUT Pin Pch ON Voltage VOH1 - VDD-0.1 VDD-0.02 - V - DOUT Pin Nch ON Voltage VOL2 - - 0.1 0.5 V - DOUT Pin Pch ON Voltage VOH2 - VDD-0.1 VDD-0.02 - V - Current Consumption IDD VDD=3.9V, V-=0V - 3.0 6.0 ㎂ L Current Consumption at Stand-By IS VDD=2.0V - - 0.1 ㎂ L Overcharge Detection Voltage VDET1 R1=100Ω 4.240 4.300 4.360 V B Overcharge Release Voltage VREL1 R1=100Ω 4.040 4.100 4.160 V B Overdischarge Detection Voltage VDET2 V-=0V, R1=100Ω 2.290 2.400 2.510 V D Overdischarge Release Voltage1 VREL2' V-≥VCHA, R1=100Ω 2.290 2.400 2.510 V D Overdischarge Release Voltage2 VREL2' V-≤VCHA, R1=100Ω 2.890 3.000 3.110 V D Discharging Overcurrent Detection Voltage VDET3 VDD=3.6V, R2=1.0㏀ 0.115 0.150 0.185 V F Short Detection Voltage VSHORT VDD=3.6V 0.55 1.15 1.70 V F Charger Detection Threshold Voltage VCHA - -1.2 -0.7 -0.2 V G Note : *1 The test circuit symbols. Rev. 07 [2012. 07. 02] -4- Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ※ TOPR=25℃ Item Symbol Measure Condition Min. Typ. Max. Unit *1 Overcharge Detection Delay Time tVDET1 VDD=3.6V→4.5V 0.001 0.08 0.20 s B Overdischarge Detection Delay Time tVDET2 VDD=3.6V→2.0V 1 40 100 ㎳ D Discharging Overcurrent Detection Delay Time tVDET3 VDD=3.6V, V-=0V→1V 1 10 30 ㎳ F Short Detection Delay Time tSHORT - 300 800 ㎲ F Drain-Source Breakdown Voltage BVDSS ID=250㎂, VGS=0V 20 - - V Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V - - 1 ㎂ Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V - - 0.1 ㎂ Gate-Source Breakdown Voltage BVGSO VDS=0V, IG=±250㎂ ±12 - - V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250㎂ 0.4 - 0.9 V VGS=10V, ID=1A - 42 50 mΩ VGS=4.5V, ID=1A - 50 60 mΩ VGS=3.9V, ID=1A - 51 61 mΩ VGS=2.5V, ID=1A - 62 76 mΩ IS=1.7A, VGS=0V - 0.74 1.20 V Static Source-Source ON-Resistance VDD=3.6V, V-=0V→3V RSS(ON) Diode Forward Voltage VSD Note : *1 The test circuit symbols. *2 The parameter is guaranteed by design. Rev. 07 [2012. 07. 02] -5- Quality Management ITM Semiconductor Battery Protect Solution IC ELI501 Note : *1 The test circuit symbols. *2 The parameter is guaranteed by design. Rev. 07 [2012. 07. 02] -6- Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Measuring Circuit E. A. V V TP (NC) VDD TP (NC) VDD V－ V－ Source1 (VSS) Source2 Source1 (VSS) V Source2 V F. B. TP (NC) VDD V VDD A V－ Source1 (VSS) V Source2 TP (NC) V－ Source1 (VSS) V Source2 V G. C. TP (NC) VDD V－ Source1 (VSS) TP (NC) VDD V Source2 V－ Source1 (VSS) V Source2 V D. H. TP (NC) VDD V A V－ Source1 (VSS) Source2 VDD TP (NC) V－ Source1 (VSS) Source2 V Rev. 07 [2012. 07. 02] -7- Quality Management ITM Semiconductor Battery Protect Solution IC ELI501 ■ Operation 1. Overcharge detector (VD1) The VD1 monitors VDD pin voltage during charge. In the state of charging the battery, it will detect the overcharge state of the battery if the VDD terminal voltage becomes higher than the overcharge detection voltage(Typ. 4.300V). And then the COUT terminal turns to low level, so the internal charging control Nch MOSFET turns OFF and it forbids to charge the battery. After detecting overcharge, it will release the overcharge state if the VDD terminal voltage becomes lower than the overcharge release voltage(Typ.4.100V). And then the COUT terminal turns to high level, so the internal charging control Nch MOSFET turns ON, and it accepts to charge the battery. When the VDD terminal voltage is higher than the overcharge detection voltage, to disconnect the charger and connect the load, leave the COUT terminal low level, but it accepts to conduct load current via the paracitical body diode of the internal Nch MOSFET. And then if the VDD terminal voltage becomes lower than the overcharge detection voltage, the COUT terminal turns to high level, so the internal Nch MOSFET turn ON, and it accepts to charge the battery. The overcharge detection and release have delay time decided internally. When the VDD terminal voltage becomes higher than the overcharge detection voltage, if the VDD terminal voltage becomes lower than the overcharge detection voltage again within the overcharge detection delay time(Typ. 0.08s), it will not detect overcharge. And in the state of overcharge, when the VDD terminal voltage becomes lower than the overcharge release voltage, if the VDD terminal voltage backs higher than the overcharge release voltage again within the overcharge release delay time, it will not release overcharge. The output driver stage of the COUT terminal includes a level shifter, so it will output the V- terminal voltage as low level. The output type of the COUT terminal is CMOS output between VDD and V- terminal voltage. 2. Overdischarge detector (VD2) The VD1 monitors VDD pin voltage during discharge. In the state of discharging the battery, it will detect the overdischarge state of the battery if the VDD terminal becomes lower than the overdischarge detection voltage (Typ. 2.400V). And then the DOUT terminal turns to low level, so the internal discharging control Nch MOSFET turn OFF and it forbids to discharge the battery. The overdischarge status will be released by two cases: (1) When V- pin voltage is equal to or higher than the charger detection voltage (VCHA) by charging and the VDD pin voltage is higher than overdischarge detection voltage (Typ. 2.400V). (2) When V- pin voltage is equal to or lower than the charger detection voltage (VCHA) by charging and the VDD pin voltage is higher than overdischarge release voltage (Typ. 3.000V). Rev. 07 [2012. 07. 02] -8- Quality Management ITM Semiconductor Battery Protect Solution IC ELI501 When the battery voltage is about 0V, if the charger voltage is higher than the minimum operating voltage for 0V charging (Max. 1.5V), the COUT terminal outputs high level and it accepts to conduct charging current. The overdischarge detection have delay time decided internally. When the VDD terminal voltage becomes lower than the overdischarge detection voltage, if the VDD terminal voltage becomes higher than the overdischarge detection voltage again within the overdischarge detection delay time (Typ. 40ms), it will not detect overdischarge. Moreover, the overdischarge release delay time exists, too. All the circuits are stopped, and after the overdischarge is detected, it is assumed the state of the standby, and decreases the current (standby current) which IC consumes as much as possible. (When VDD=2V, Max. 0.1uA). The output type of the DOUT terminal is CMOS output between VDD and VSS terminal voltage. 3. Discharge overcurrent detector, Short detector (VD3, Short Detector) In the state of chargable and dischargabe, VD3 monitors the voltage level of V- pin. If the V- terminal voltage becomes higher than the discharging overcurrent detection voltage (Typ. 0.150V) by short of loads, etc., it will detect discharging overcurrent state. If the Vterminal voltage becomes higher then short detection voltage (Typ. 1.15V), it will detect discharging overcurrent state, too. And then the DOUT terminal outputs low level, so the internal discharging control Nch MOSFET turns OFF, and it protects from large current discharging. The discharging overcurrent detection has delay time decided internally. When the V- terminal voltage becomes higher than the discharging overcurrent detection voltage, if the V- terminal voltage becomes lower than the discharging overcurrent detection voltage within the discharging overcurrent detection delay time (Typ. 10ms), it will not detect discharging overcurrent. Morever, the discharging overcurrent release delay time exists, too. The short detection delay time (Typ. 300us) decided internally exists, too. Rev. 07 [2012. 07. 02] -9- Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Application Circuit (Example) ＋ P+ R1 100? 100Ω Protection IC Oscillator VDD Logic Circuit VD1 Overcharge Level Shift Delay Short Logic Circuit VD2 Overdischarge TP (N.C) Counter Charger V－ C2 0.1㎌ VD3 Discharge Overcurrent C1 0.1㎌ VSS DOUT COUT R2 Gate1 Gate2 1.0㏀ Common Drain Dual-Nch MOSFET Source1 Source2 － P- Drain C3 0.1㎌ ※ Application Hint R1 and C1 stabilize a supply voltage ripple. However, the detection voltage rises by the current of penetration in IC of the voltage detection when R1 is enlarged, so the value of R1 is adjusted to 100Ω or less. Moreover, adjust the value of C1 to 0.01uF or more to do the stability operation, please. R1 and R2 resistors are current limit resistance if a charger is connected reversibly or a highvoltage charger that exceeds the absolute maximum rating is connected. R1 and R2 may cause a power consumption will be over rating of power dissipation, therefore the `R1+R2` should be more than 1kohm. Moreover, if R2 is too enlarged, the charger connection release cannot be occasionally done after the overdischarge is detected, so adjust the value of R2 to 5kohm or less, please. C2 and C3 capacitors have effect that the system stability about voltage ripple or imported noise. After check characteristics, decide that these capacitors should be inserted or not, where should be inserted, and capacitance value, please. Rev. 07 [2012. 07. 02] - 10 - Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Timing Chart 1. Overcharge operations Connect Charger Connect Load Connect Charger Connect Load VDD VDET1 VREL1 t VVDD VDET3 VSS VCH t COUT tVDET1 tVDET1 VDD tVREL1 tVREL1 Vt ICHARGE 0 t IDISCHARGE Rev. 07 [2012. 07. 02] - 11 - Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC 2. Overdischarge, Discharging Overcurrent and Short operations Overcurrent Connect Load VDD Connect Charger Connect Load Connect Charger Open Short Open VREL2 VDET2 t VVDD VSHORT VDET3 VSS t DOUT tVDET2 tVDET2 tVDET3 tSHORT VDD tVREL2 V- tVREL2 tVREL3 tVREL3 t ICHARGE 0 t IDISCHARGE Rev. 07 [2012. 07. 02] - 12 - Quality Management ITM Semiconductor Battery Protect Solution IC ELI501 ■ Packing spec ▷ Carrier tape spec ▷ Reel spec LABEL REEL LABEL ▷ Taping spec Rev. 07 [2012. 07. 02] - 13 - Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ▷ OUTER BOX PACKING SPECIFICATION OUT BOX LABEL Anti-static bag packing Inner box Tape Reel Out box Rev. 07 [2012. 07. 02] - 14 - Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Package Description D e1 e E1 E D1 A1 θ A SIDE VIEW TOP VIEW SEATING PLANE FRONT VIEW D3 0.200 X 4 REF. 0.4 0.30 MAX. A2 0.127±0.008 BURR SIDE L EXPOSED PAD 0.355 REF. 0.963 REF. 1.015 REF. X b REF. E2 1.53 REF. DETAIL X (3:1) 1.150 REF. BTM VIEW SYMBOL DIMENSIONS MIN. NOM. MAX. A 0.750 0.800 0.850 A1 0.623 0.673 0.723 A2 - - 0.050 D 5.900 6.000 6.100 D1 5.320 5.370 5.420 D3 2.220 REF. E 2.000 2.100 2.200 E1 1.950 2.000 2.050 E2 θ NOTE 1.330 REF. - e - 10 ° 0.650 BSC e1 1.300 BSC L 0.350 - - b 0.255 0.300 0.390 NOTE 1. LEAD BURR : VERTICAL MAX 0.025 HORIZONTAL MAX 0.025 BURR SIDE : ALL TOP SIDE 2. MOLD BURR & FLASH : PACKAGE OUT LINE BURR MAX 0.100 EXPOSED PAD FLASH MAX 0.200 3. PACKAGE WARPAGE MAX 0.025 4. LEAD AND EXPOSED PAD PLATING : PURE TIN THICKNESS> 7.62~25.4um ■ Recommend Land Pattern (time shorar) [mm] Rev. 07 [2012. 07. 02] - 15 - Quality Management ITM Semiconductor ELI501 Battery Protect Solution IC ■ Marking Contents Indicate 1'st Pin Model No. ELI501 ABCDEF Lot Code. Manufacturing week Manufacturing year Assembly Location Rev. 07 [2012. 07. 02] - 16 -