Silan Semiconductors SC451XX LI-ION BATTERY PROTECTOR DESCRIPTION The SC451XX series are protection ICs for over-charge /discharge of rechargeable one-cell Lithium-ion (Li+) batteries by CMOS process. The SC451XX series can detect over-charge/discharge of Li+ one-cell and excess load current, further include a short circuit protector for preventing large external short circuit current. SOT-26 FEATURES * Low supply current. APPLICATIONS * High withstand voltage. * Over-charge/over-discharge protection for Li+ * High accuracy detector threshold. one-cell pack * Variety of detector threshold. * High precision protectors for cell-phones and any * Built-in protection circuit. * Output delay of over-charge. other gadgets using on board Li+ one-cell * Ultra small package: SOT-26 battery. PIN ASSIGNMENT BLOCK DIAGRAM VDD 5 6 5 2 4 VD1 Ct Level shift short circuit detector SC451XX delay VD2 1 2 3 VD3 3 4 VSS DOUT 1 COUT 6 V- HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 1 2000.12.31 Silan Semiconductors SC451XX ABSOLUTE MAXIMUM RATING Characteristic Supply Voltage Input Voltage Output Voltage Power Dissipation Symbol Value Unit VDD 0.3 ~ 12 V V- VDD-18~VDD+0.3 V VCT Vss-0.3 ~ VDD+0.3 V VCOUT VDD-18~VDD+0.3 V VDOUT Vss-0.3 ~ VDD+0.3 V mW PD 150 Storage Temperature TSTG -55 ~ +125 °C Operating Temperature TOPR -40 ~ + 85 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C, unless otherwise specified) Sc451XX-01 Parameter Operating Voltage Min Operating Voltage for 0V Charging Over-charge Threshold Voltage Over-charge Threshold Hysteresis Range Output Delay Time of Over-charge Over-discharge Threshold Voltage Output Delay Time of Over-Discharge Symbol VDD1 Vst VDET1 Conditions Voltage defined as VDD-VSS VDET2 Typ 1.5 Voltage defined as VDD-V-, VDD-VSS=0V Detect rising edge of supply voltage VHYS1 TVDET1 Min C3=0.01µF,VDD=3.6V→4.3V Detect falling edge of supply voltage TVDET2 VDD=3.6V→2.4V Detect rising edge of “V-” pin Max Unit 10 V 1.2 V 4.20 4.25 4.30 V 0.15 0.2 0.25 V 50 75 100 ms 2.437 2.500 2.563 V 7 10 13 ms 0.17 0.20 0.23 V 9 13 17 ms Excess Current Threshold Voltage VDET3 Output Delay Time of Excess Current TVDET3 VDD=3.0V Short Detection Voltage Vshort VDD=3.0V VDD-1.1 VDD-0.8 VDD-0.5 V Output Delay Time of Short Detection Tshort VDD=3.0V 5 50 µs Rshort VDD=3.6V, V- =1.0 50 100 150 kΩ 0.2 0.5 3.4 3.8 3.4 3.7 Reset Resistance for Excess Current Protection voltage Nch ON Voltage of COUT VOL1 IOL=50µA,VDD=4.4V Pch ON Voltage of COUT VOH1 IOH= -50µA,VDD=3.9V Nch ON Voltage of DOUT VOL2 IOL=50µA,VDD=2.4V Pch ON voltage of DOUT VOH2 IOH= -50µA,VDD=3.9V Supply Current Standby Current IDD VDD=3.9V,V- =0V Istandby VDD=2.0V 0.2 V V 0.5 V V 3.0 6.0 µA 0.3 0.6 µA HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 2 2000.12.31 Silan Semiconductors SC451XX SC451XX-02 Parameter Symbol Operating Voltage VDD1 Min Operating Voltage for 0V Vst Charging Over-charge Threshold Voltage VDET1 Over-charge Threshold Hysteresis Conditions Min Voltage defined as VDD-VSS Voltage defined as VDD-V-, VDD-VSS=0V Detect rising edge of supply voltage VHYS1 Range Output Delay Time of Over-charge TVDET1 Over-discharge Threshold Voltage VDET2 Output Delay Time of Over-discharge TVDET2 Typ Max Unit 10 V 1.2 V 1.5 4.30 4.35 4.40 V 0.15 0.2 0.25 V 55 80 105 ms 2.437 2.500 2.563 V 7 10 13 ms 0.17 0.20 0.23 V 9 13 17 ms C3=0.01µF,VDD=3.6V→4.3V Detect falling edge of supply voltage VDD=3.6V→2.4V Detect rising edge of “V-” pin Excess Current Threshold Voltage VDET3 Output Delay Time of Excess Current TVDET3 VDD=3.0V Short Detection Voltage Vshort VDD=3.0V VDD-1.1 VDD-0.8 VDD-0.5 V Output Delay Time of Short Detection Tshort VDD=3.0V 5 50 µs Rshort VDD=3.6V, V- =1.0 50 100 150 kΩ 0.2 0.5 V 3.4 3.8 3.4 3.7 Reset Resistance for Excess Current Protection voltage Nch ON Voltage of COUT VOL1 IOL=50µA, VDD=4.4V Pch ON Voltage of COUT VOH1 IOH= -50µA, VDD=3.9V Nch ON Voltage of DOUT VOL2 IOL=50µA, VDD=2.4V Pch ON Voltage of DOUT VOH2 IOH= -50µA, VDD=3.9V Supply Current IDD Standby Current 0.2 VDD=3.9V, V- =0V Istandby VDD=2.0V V 0.5 V V 3.0 6.0 µA 0.3 0.6 µA PIN DESCRIPTION PIN No. Symbol 1 COUT Description Output of over-charge detection, CMOS output 2 CT Pin for external capacitor setting output delay of VD1 3 VSS Ground 4 DOUT 5 VDD 6 V- Output of over-discharge detection, CMOS output Power supply Pin for charger negative input HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 3 2000.12.31 Silan Semiconductors SC451XX FUNCTIONAL DESCRIPTION • VD1/OVER-CHARGE DETECTOR The VD1 monitors VDD pin voltage. When the VDD voltage crosses over-charge detector threshold VDET1 from a low value to a value higher than the VDET1, the VD1 can sense over-charging and an external charge control Nch-MOS-FET turns to “off” with COUT pin being at “L”. An output delay time for over-charges detection can be set by an external capacitor C3 connecting the VSS pin and Ct pin. The external capacitor can make a delay time form a moment detecting over-charge to a time output a signal which enables charge control Nch-MOS-FET for turning to “off”. Though the VDD voltage would be going up to a higher level than VDET1 if it is within a time period of the output delay time, VD1 would not output a signal for turning “off” of charge control Nch-MOS-FET. The output delay time can be calculated as below: tVDET1 = C3 × (VDD − 0.7) 0.48 × 10 − 6 A level shifter incorporated in a buffer driver for the COUT pin makes the “L” of COUT pin to the V-pin voltage and the “H” of COUT pin is set to VDD voltage with CMOS buffer. • RESET CONDITIONS FROM OVERCHARGING OF SC451XX-01 There can be two cases to reset the VD1 making the COUT pin level to “H” again after detecting over-charge. Resetting the VD1 makes the charging system ready for resumption of charging process. The first case is in such condition that a time when the VDD voltage is coming down to a level lower than “VDET1-VHYS1”. While in the second case, disconnecting a charger from the battery pack can make the VD1 resetting when the VDD level is within hysteresis width (VDET1-VHYS1≤VDD≤VDET1). After detecting over-charge with the VDD voltage of higher than VDET1, connecting system load to the battery pack makes load current allowable through parasitic diode of external charge control Nch-MOS-FET. The COUT level would be “H” when the VDD level is coming down to a level below the VDET1 by continuous drawing of load current. • RESET CONDITIONS FROM OVERCHARGING OF SC451XX-02 After detecting over-charge, the VD1 would not be release and COUT level would not switch to “H” again with the exception that a cell voltage reaches to a lower value than “VDET1-VHYS1” by self discharge of cell or else. After detecting over-charge, when the VDD level stays at a value higher than “VDET1-VHYS1”, to connect battery pack to a system load makes battery pack being disable at for charging or discharging because of excess current detector operated being DOUT ”L”. HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 4 2000.12.31 Silan Semiconductors SC451XX • VD2/OVER-DISCHARGE DETECTOR The VD2 monitors a VDD pin voltage. When the VDD voltage crosses the over-discharge detector threshold VDET2 from a high value to a value lower than the VDET2, the VD2 can sense an over-discharging and the external discharge control Nch-MOS-FET turns to “off” with the DOUT pin being at “L”. Resetting the VD2 with the DOUT pin level being “H” again after detecting over-discharge is only possible by connecting a charger to the battery pack. When the VDD voltage stays under over-discharge detector threshold VDET2 charge current can flow through parasitic diode of external discharge control Nch-MOS-FET, then after the VDD voltage comes up to a value larger than VDET2 discharging process would be advanced through “on” state discharge control Nch-MOS-FET. Connecting a charger to the battery pack makes the DOUT level being “H” instantaneously when the VDD voltage is higher than VDET2. When a cell voltage equals to zero, connecting charger to the battery pack makes the system allowable for charge with higher charge voltage than Vst, 1.2V Max. An output delay time of the over-discharge detection is fixed internally. Though the VDD voltage would be going down to a lower level than VDET2 if it is within a time period of the output delay time, VD2 would not output a signal for turning “off” of discharge control Nch-MOS-FET. After detection of an over-discharge by VD2, supply current would be reduced to 0.3µATYP. at VDD=2.0V and into standby, only the charger detector is operating. The output type of DOUT pin is CMOS having “H” level of VDD and “L” level of VSS. • VD3/EXCESS CURRENT DETECTOR, SHORT CIRCUIT PROTECTOR *Both of the excess current detector and short circuit protector can work when both control Nch-MOS-FETs are in “on” state. When the V-pin voltage is going up to a value between the short protection voltage Vshort and excess current threshold VDET3, the excess current detector operates and further soaring of V-pin voltage higher than Vshort makes the short circuit protector enabled. As a result the external discharge control Nch-MOS-FET turns to “off” with the DOUT pin being at “L”. *An output delay time for the excess current detector is internally fixed, 13ms TYP. at VDD=3.0V. A quick recovery of V-pin level from a value between Vshort and VDET3 within the delay time keeps the discharge control FET staying “ON” state. When the short circuit protector is enabled, the DOUT would be “L” and its delay time would be 5µs TYP. *The V-pin has a built-in pull down resistor, TYP.100KΩ, connected to the VSS pin. After an excess current or short circuit protection is detected, removing a cause of excess current or external short circuit makes an external discharge control Nch-MOS-FET to an “on” state automatically with the V-pin level being down to the VSS level through the built-in pull down resistor. * When VDD voltage is higher than VDET2 at a time when the excess current is detected the SC451XX does not enter a standby mode, while VDD voltage is lower than VDET2 the SC451XX enters a standby mode. After detecting short circuit the SC451XX will not enter a standby mode. HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 5 2000.12.31 Silan Semiconductors SC451XX TIMING DIAGRAM Charging discharging Charging discharging Charging discharging Charging excess short current current open open VDET1 VDET1 -VHYS1 VDD VDET2 t VDD Vshort VVDET3 VSS t tVDET1 tVDET1 VDD COUT V- t tVDET2 tVDET2 tVDET3 tshort VDD DOUT VSS t charging current Charging/ discharging 0 current t discharging current HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 6 2000.12.31 Silan Semiconductors SC451XX TEST CIRCUITS VDD VDD 5 Ct 2 V- v VSS VDD V- v A VSS VDD V- VSS v 6 VSS 3 VDD 5 6 V- DOUT 4 VSS 3 VDD 3 1 6 4 DOUT COUT 1 5 6 V- 5 COUT 50A V- v VSS 3 5 6 50A COUT 1 v 3 5 6 4 DOUT 50A v 3 (To be continued) HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 7 2000.12.31 Silan Semiconductors SC451XX (Continued) VDD V- VSS R1 VDD 5 4 v 5 V- 6 VSS 3 3 5 C3 5 2 Ct R2 6 6 v 1 VSS VDD v 6 C1 V- 50A DOUT v COUT 4 C2 DOUT 3 3 TYPICAL APPLICATION CIRCUITS + R1 100 C1 0.1 VDD 5 C3 0.01 V2 SC451XX 6 Ct VSS 3 4 1 DOUT C2 0.1 COUT R2 1K - HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 8 2000.12.31 Silan Semiconductors SC451XX TYPICAL PERFORMANCE CHARACTERISTICS Over-discharge threshold VDET2(V) Over-charge threshold VDET1(V) 4.27 4.26 4.25 4.24 4.23 4.22 4.21 4.20 -60 -40 -20 0 2.54 2.53 2.52 2.51 2.50 2.49 2.48 2.47 -60 -40 -20 0 20 40 60 80 100 Temperature Topt( k) Excess current threshold VDET3(V) 0.210 0.205 0.200 0.195 0.190 -60 -40 -20 0 20 40 60 80 100 Short circuit protector threshold Vshort(V) Temperature Topt( k) 2.40 2.35 2.30 2.25 2.20 2.15 2.10 -60 -40 -20 0 20 40 60 80 100 Temperature Topt( k) 100 90 80 70 60 50 40 30 20 40 60 80 100 Temperature Topt( k) Output delay of over-discharge tVDET2(ms) Output delay of over-charge tVDET1(ms) Temperature Topt( k) 20 -60 -40 -20 0 20 40 60 80 100 18 16 14 12 10 8 6 4 2 -60 -40 -20 0 20 40 60 80 100 Temperature Topt( k) HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 9 2000.12.31 Silan Semiconductors SC451XX TYPICAL PERFORMANCE CHARACTERISTICS (continued) VDD=3.0V Output delay of short circuit protector tshort(S) Output delay of excess current tVDET3(ms) VDD=3.0V 20 18 16 14 12 10 8 6 4 2 -60 -40 -20 0 20 40 60 80 100 Temperature Topt(k) 10 8 6 4 2 0 -60 -40 -20 0 20 40 60 80 100 Temperature Topt(k) VDD=3.9V V-=0V 4.0 Supply current IDD(A) Over-charge treshold hysteresis VHYS1(V) 0.210 0.205 0.200 0.195 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.190 -60 -40 -20 0 0.0 -60 -40 -20 20 40 60 80 100 Temperature Topt(k) 0 20 40 60 80 100 Temperature Topt(k) Standby current Istandby(A) VDD=2.0V 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -40 -20 0 20 40 60 80 100 Temperature Topt(k) HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 10 2000.12.31 Silan Semiconductors SC451XX IOL=50A VDD=4.4V COUT Pch Driver ON Voltage VOH2(V) COUT Nch Driver ON Voltage VOL1(V) TYPICAL PERFORMANCE CHARACTERISTICS (continued) 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -40 -20 0 20 40 60 80 100 IOH= -50A VDD=3.9V 3.90 3.85 3.80 3.75 3.70 3.65 3.60 -60 -40 -20 IOL=50èA VDD=2.4V 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -40 -20 0 20 40 60 80 100 Temperature Topt( DOUT Pch Driver ON Voltage VOH2(V) DOUT Nch Driver ON Voltage VOL2(V) Temperature Topt() 0 20 40 60 80 100 Temperature Topt() IOH= -50A VDD=3.9V 3.90 3.85 3.80 3.75 3.70 3.65 3.60 -60 -40 -20 0 20 40 60 80 100 Temperature Topt( HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 11 2000.12.31 Silan Semiconductors SC451XX VDD=3.6V~4.3V 800 700 600 500 400 300 200 100 0 0 0.05 0.1 Output delay of short protection tshort(s) Output delay of over-charge tVDET1(ms) TYPICAL PERFORMANCE CHARACTERISTICS (continued) RI=1K, VDD=3.0V 10000 1000 100 10 1 0.001 20.00 15.00 10.00 5.00 3.0 3.5 4.0 4.5 Output delay of excess current tVDET3(ms) Output delay of excess current tVDET3(ms) 25.00 0.00 2.5 0.01 0.1 1 External capacitance C2(F) External capacitance C3(F) Supply voltage VDD(V) 0.210 0.209 0.208 0.207 0.206 0.205 0.204 0.203 0.202 0 0.5 1.0 1.5 2.0 2.5 3.0 External resistance R2(K) C1=0 ~ 6.8F 4.258 Over-charge threshold VDET1(V) C3=0.22F 4.256 C3=0.1F 4.254 4.252 C3=0.01F 4.250 4.248 4.246 0 200 400 600 800 1000 External resistance R1() HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 12 2000.12.31 Silan Semiconductors SC451XX PACKAGE OUTLINE SOT-26 UNIT: mm 0 ~ 15 o 2.9±0.2 1.6±0.2 2.8±0.2 MIN 0.2 0 ~ 0.1 0.40 0.95 0.95 0.15 1.1±0.2 1.0 ~ 1.3 1.9±0.2 HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 13 2000.12.31