ETC SC451XX

Silan
Semiconductors SC451XX
LI-ION BATTERY PROTECTOR
DESCRIPTION
The SC451XX series are protection ICs for over-charge
/discharge of rechargeable one-cell Lithium-ion (Li+) batteries
by CMOS process.
The SC451XX series can detect over-charge/discharge
of Li+ one-cell and excess load current, further include a
short circuit protector for preventing large external short
circuit current.
SOT-26
FEATURES
* Low supply current.
APPLICATIONS
* High withstand voltage.
* Over-charge/over-discharge protection for Li+
* High accuracy detector threshold.
one-cell pack
* Variety of detector threshold.
* High precision protectors for cell-phones and any
* Built-in protection circuit.
* Output delay of over-charge.
other gadgets using on board Li+ one-cell
* Ultra small package: SOT-26
battery.
PIN ASSIGNMENT
BLOCK DIAGRAM
VDD
5
6
5
2
4
VD1
Ct
Level
shift
short circuit
detector
SC451XX
delay
VD2
1
2
3
VD3
3
4
VSS
DOUT
1
COUT
6
V-
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
1
2000.12.31
Silan
Semiconductors SC451XX
ABSOLUTE MAXIMUM RATING
Characteristic
Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Symbol
Value
Unit
VDD
0.3 ~ 12
V
V-
VDD-18~VDD+0.3
V
VCT
Vss-0.3 ~ VDD+0.3
V
VCOUT
VDD-18~VDD+0.3
V
VDOUT
Vss-0.3 ~ VDD+0.3
V
mW
PD
150
Storage Temperature
TSTG
-55 ~ +125
°C
Operating Temperature
TOPR
-40 ~ + 85
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C, unless otherwise specified)
Sc451XX-01
Parameter
Operating Voltage
Min Operating Voltage for 0V
Charging
Over-charge Threshold Voltage
Over-charge Threshold Hysteresis
Range
Output Delay Time of Over-charge
Over-discharge Threshold Voltage
Output Delay Time of Over-Discharge
Symbol
VDD1
Vst
VDET1
Conditions
Voltage defined as VDD-VSS
VDET2
Typ
1.5
Voltage defined as VDD-V-,
VDD-VSS=0V
Detect rising edge of supply
voltage
VHYS1
TVDET1
Min
C3=0.01µF,VDD=3.6V→4.3V
Detect falling edge of supply
voltage
TVDET2 VDD=3.6V→2.4V
Detect rising edge of “V-” pin
Max
Unit
10
V
1.2
V
4.20
4.25
4.30
V
0.15
0.2
0.25
V
50
75
100
ms
2.437
2.500
2.563
V
7
10
13
ms
0.17
0.20
0.23
V
9
13
17
ms
Excess Current Threshold Voltage
VDET3
Output Delay Time of Excess Current
TVDET3
VDD=3.0V
Short Detection Voltage
Vshort
VDD=3.0V
VDD-1.1 VDD-0.8 VDD-0.5
V
Output Delay Time of Short Detection
Tshort
VDD=3.0V
5
50
µs
Rshort
VDD=3.6V, V- =1.0
50
100
150
kΩ
0.2
0.5
3.4
3.8
3.4
3.7
Reset Resistance for Excess Current
Protection
voltage
Nch ON Voltage of COUT
VOL1
IOL=50µA,VDD=4.4V
Pch ON Voltage of COUT
VOH1
IOH= -50µA,VDD=3.9V
Nch ON Voltage of DOUT
VOL2
IOL=50µA,VDD=2.4V
Pch ON voltage of DOUT
VOH2
IOH= -50µA,VDD=3.9V
Supply Current
Standby Current
IDD
VDD=3.9V,V- =0V
Istandby VDD=2.0V
0.2
V
V
0.5
V
V
3.0
6.0
µA
0.3
0.6
µA
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
2
2000.12.31
Silan
Semiconductors SC451XX
SC451XX-02
Parameter
Symbol
Operating Voltage
VDD1
Min Operating Voltage for 0V
Vst
Charging
Over-charge Threshold Voltage
VDET1
Over-charge Threshold Hysteresis
Conditions
Min
Voltage defined as VDD-VSS
Voltage defined as VDD-V-,
VDD-VSS=0V
Detect rising edge of supply
voltage
VHYS1
Range
Output Delay Time of Over-charge
TVDET1
Over-discharge Threshold Voltage
VDET2
Output Delay Time of Over-discharge
TVDET2
Typ
Max
Unit
10
V
1.2
V
1.5
4.30
4.35
4.40
V
0.15
0.2
0.25
V
55
80
105
ms
2.437
2.500
2.563
V
7
10
13
ms
0.17
0.20
0.23
V
9
13
17
ms
C3=0.01µF,VDD=3.6V→4.3V
Detect falling edge of supply
voltage
VDD=3.6V→2.4V
Detect rising edge of “V-” pin
Excess Current Threshold Voltage
VDET3
Output Delay Time of Excess Current
TVDET3
VDD=3.0V
Short Detection Voltage
Vshort
VDD=3.0V
VDD-1.1 VDD-0.8 VDD-0.5
V
Output Delay Time of Short Detection
Tshort
VDD=3.0V
5
50
µs
Rshort
VDD=3.6V, V- =1.0
50
100
150
kΩ
0.2
0.5
V
3.4
3.8
3.4
3.7
Reset Resistance for Excess Current
Protection
voltage
Nch ON Voltage of COUT
VOL1
IOL=50µA, VDD=4.4V
Pch ON Voltage of COUT
VOH1
IOH= -50µA, VDD=3.9V
Nch ON Voltage of DOUT
VOL2
IOL=50µA, VDD=2.4V
Pch ON Voltage of DOUT
VOH2
IOH= -50µA, VDD=3.9V
Supply Current
IDD
Standby Current
0.2
VDD=3.9V, V- =0V
Istandby VDD=2.0V
V
0.5
V
V
3.0
6.0
µA
0.3
0.6
µA
PIN DESCRIPTION
PIN No.
Symbol
1
COUT
Description
Output of over-charge detection, CMOS output
2
CT
Pin for external capacitor setting output delay of VD1
3
VSS
Ground
4
DOUT
5
VDD
6
V-
Output of over-discharge detection, CMOS output
Power supply
Pin for charger negative input
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
3
2000.12.31
Silan
Semiconductors SC451XX
FUNCTIONAL DESCRIPTION
• VD1/OVER-CHARGE DETECTOR
The VD1 monitors VDD pin voltage. When the VDD voltage crosses over-charge detector threshold VDET1
from a low value to a value higher than the VDET1, the VD1 can sense over-charging and an external charge
control Nch-MOS-FET turns to “off” with COUT pin being at “L”.
An output delay time for over-charges detection can be set by an external capacitor C3 connecting the VSS
pin and Ct pin. The external capacitor can make a delay time form a moment detecting over-charge to a time
output a signal which enables charge control Nch-MOS-FET for turning to “off”. Though the VDD voltage would be
going up to a higher level than VDET1 if it is within a time period of the output delay time, VD1 would not output a
signal for turning “off” of charge control Nch-MOS-FET. The output delay time can be calculated as below:
tVDET1 =
C3 × (VDD − 0.7)
0.48 × 10 − 6
A level shifter incorporated in a buffer driver for the COUT pin makes the “L” of COUT pin to the V-pin voltage
and the “H” of COUT pin is set to VDD voltage with CMOS buffer.
• RESET CONDITIONS FROM OVERCHARGING OF SC451XX-01
There can be two cases to reset the VD1 making the COUT pin level to “H” again after detecting over-charge.
Resetting the VD1 makes the charging system ready for resumption of charging process.
The first case is in such condition that a time when the VDD voltage is coming down to a level lower than
“VDET1-VHYS1”. While in the second case, disconnecting a charger from the battery pack can make the VD1
resetting when the VDD level is within hysteresis width (VDET1-VHYS1≤VDD≤VDET1).
After detecting over-charge with the VDD voltage of higher than VDET1, connecting system load to the
battery pack makes load current allowable through parasitic diode of external charge control Nch-MOS-FET. The
COUT level would be “H” when the VDD level is coming down to a level below the VDET1 by continuous drawing of
load current.
• RESET CONDITIONS FROM OVERCHARGING OF SC451XX-02
After detecting over-charge, the VD1 would not be release and COUT level would not switch to “H” again with
the exception that a cell voltage reaches to a lower value than “VDET1-VHYS1” by self discharge of cell or else.
After detecting over-charge, when the VDD level stays at a value higher than “VDET1-VHYS1”, to connect battery
pack to a system load makes battery pack being disable at for charging or discharging because of excess current
detector operated being DOUT ”L”.
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
4
2000.12.31
Silan
Semiconductors SC451XX
• VD2/OVER-DISCHARGE DETECTOR
The VD2 monitors a VDD pin voltage. When the VDD voltage crosses the over-discharge detector threshold
VDET2 from a high value to a value lower than the VDET2, the VD2 can sense an over-discharging and the
external discharge control Nch-MOS-FET turns to “off” with the DOUT pin being at “L”.
Resetting the VD2 with the DOUT pin level being “H” again after detecting over-discharge is only possible by
connecting a charger to the battery pack. When the VDD voltage stays under over-discharge detector threshold
VDET2 charge current can flow through parasitic diode of external discharge control Nch-MOS-FET, then after the
VDD voltage comes up to a value larger than VDET2 discharging process would be advanced through “on” state
discharge control Nch-MOS-FET. Connecting a charger to the battery pack makes the DOUT level being “H”
instantaneously when the VDD voltage is higher than VDET2.
When a cell voltage equals to zero, connecting charger to the battery pack makes the system allowable for
charge with higher charge voltage than Vst, 1.2V Max.
An output delay time of the over-discharge detection is fixed internally. Though the VDD voltage would be
going down to a lower level than VDET2 if it is within a time period of the output delay time, VD2 would not output
a signal for turning “off” of discharge control Nch-MOS-FET.
After detection of an over-discharge by VD2, supply current would be reduced to 0.3µATYP. at VDD=2.0V
and into standby, only the charger detector is operating.
The output type of DOUT pin is CMOS having “H” level of VDD and “L” level of VSS.
• VD3/EXCESS CURRENT DETECTOR, SHORT CIRCUIT PROTECTOR
*Both of the excess current detector and short circuit protector can work when both control Nch-MOS-FETs
are in “on” state.
When the V-pin voltage is going up to a value between the short protection voltage Vshort and excess
current threshold VDET3, the excess current detector operates and further soaring of V-pin voltage higher than
Vshort makes the short circuit protector enabled. As a result the external discharge control Nch-MOS-FET turns
to “off” with the DOUT pin being at “L”.
*An output delay time for the excess current detector is internally fixed, 13ms TYP. at VDD=3.0V. A quick
recovery of V-pin level from a value between Vshort and VDET3 within the delay time keeps the discharge control
FET staying “ON” state.
When the short circuit protector is enabled, the DOUT would be “L” and its delay time would be 5µs TYP.
*The V-pin has a built-in pull down resistor, TYP.100KΩ, connected to the VSS pin.
After an excess current or short circuit protection is detected, removing a cause of excess current or external
short circuit makes an external discharge control Nch-MOS-FET to an “on” state automatically with the V-pin level
being down to the VSS level through the built-in pull down resistor.
* When VDD voltage is higher than VDET2 at a time when the excess current is detected the SC451XX does not
enter a standby mode, while VDD voltage is lower than VDET2 the SC451XX enters a standby mode.
After detecting short circuit the SC451XX will not enter a standby mode.
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
5
2000.12.31
Silan
Semiconductors SC451XX
TIMING DIAGRAM
Charging
discharging
Charging
discharging
Charging
discharging
Charging
excess
short
current
current
open
open
VDET1
VDET1 -VHYS1
VDD
VDET2
t
VDD
Vshort
VVDET3
VSS
t
tVDET1
tVDET1
VDD
COUT
V-
t
tVDET2
tVDET2
tVDET3 tshort
VDD
DOUT
VSS
t
charging
current
Charging/
discharging
0
current
t
discharging
current
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
6
2000.12.31
Silan
Semiconductors SC451XX
TEST CIRCUITS
VDD
VDD
5
Ct
2
V-
v
VSS
VDD
V-
v A
VSS
VDD
V-
VSS
v
6
VSS
3
VDD
5
6
V-
DOUT
4
VSS
3
VDD
3
1
6
4
DOUT
COUT
1
5
6
V-
5
COUT
50­A
V-
v
VSS
3
5
6
50­A
COUT
1
v
3
5
6
4
DOUT
50­A
v
3
(To be continued)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
7
2000.12.31
Silan
Semiconductors SC451XX
(Continued)
VDD
V-
VSS
R1
VDD
5
4
v
5
V-
6
VSS
3
3
5
C3
5
2
Ct
R2
6
6
v
1
VSS
VDD
v
6
C1
V-
50­A
DOUT
v
COUT
4
C2
DOUT
3
3
TYPICAL APPLICATION CIRCUITS
+
R1
100
C1
0.1
VDD
5
C3 0.01
V2
SC451XX
6
Ct
VSS
3
4
1
DOUT
C2 0.1
COUT
R2
1K
-
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
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Silan
Semiconductors SC451XX
TYPICAL PERFORMANCE CHARACTERISTICS
Over-discharge threshold
VDET2(V)
Over-charge threshold
VDET1(V)
4.27
4.26
4.25
4.24
4.23
4.22
4.21
4.20
-60 -40 -20 0
2.54
2.53
2.52
2.51
2.50
2.49
2.48
2.47
-60 -40 -20 0
20 40 60 80 100
Temperature Topt( k)
Excess current threshold
VDET3(V)
0.210
0.205
0.200
0.195
0.190
-60 -40 -20 0
20 40 60 80 100
Short circuit protector threshold
Vshort(V)
Temperature Topt( k)
2.40
2.35
2.30
2.25
2.20
2.15
2.10
-60 -40 -20 0
20 40 60 80 100
Temperature Topt( k)
100
90
80
70
60
50
40
30
20 40 60 80 100
Temperature Topt( k)
Output delay of over-discharge
tVDET2(ms)
Output delay of over-charge
tVDET1(ms)
Temperature Topt( k)
20
-60 -40 -20 0
20 40 60 80 100
18
16
14
12
10
8
6
4
2
-60 -40 -20 0
20 40 60 80 100
Temperature Topt( k)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
9
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Silan
Semiconductors SC451XX
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VDD=3.0V
Output delay of short circuit protector
tshort(­S)
Output delay of excess current
tVDET3(ms)
VDD=3.0V
20
18
16
14
12
10
8
6
4
2
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(k)
10
8
6
4
2
0
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(k)
VDD=3.9V V-=0V
4.0
Supply current IDD(­A)
Over-charge treshold hysteresis
VHYS1(V)
0.210
0.205
0.200
0.195
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.190
-60 -40 -20
0
0.0
-60 -40 -20
20 40 60 80 100
Temperature Topt(k)
0
20 40 60 80 100
Temperature Topt(k)
Standby current Istandby(­A)
VDD=2.0V
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(k)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
10
2000.12.31
Silan
Semiconductors SC451XX
IOL=50A VDD=4.4V
COUT Pch Driver ON Voltage VOH2(V)
COUT Nch Driver ON Voltage VOL1(V)
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-60 -40 -20
0
20 40 60 80 100
IOH= -50A VDD=3.9V
3.90
3.85
3.80
3.75
3.70
3.65
3.60
-60 -40 -20
IOL=50èA VDD=2.4V
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(
DOUT Pch Driver ON Voltage VOH2(V)
DOUT Nch Driver ON Voltage VOL2(V)
Temperature Topt()
0
20 40 60 80 100
Temperature Topt()
IOH= -50A VDD=3.9V
3.90
3.85
3.80
3.75
3.70
3.65
3.60
-60 -40 -20
0
20 40 60 80 100
Temperature Topt(
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
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Silan
Semiconductors SC451XX
VDD=3.6V~4.3V
800
700
600
500
400
300
200
100
0
0
0.05
0.1
Output delay of short protection tshort(­s)
Output delay of over-charge tVDET1(ms)
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
RI=1K, VDD=3.0V
10000
1000
100
10
1
0.001
20.00
15.00
10.00
5.00
3.0
3.5
4.0
4.5
Output delay of excess current tVDET3(ms)
Output delay of excess current tVDET3(ms)
25.00
0.00
2.5
0.01
0.1
1
External capacitance C2(F)
External capacitance C3(F)
Supply voltage VDD(V)
0.210
0.209
0.208
0.207
0.206
0.205
0.204
0.203
0.202
0
0.5
1.0
1.5
2.0
2.5
3.0
External resistance R2(K)
C1=0 ~ 6.8F
4.258
Over-charge threshold VDET1(V)
C3=0.22F
4.256
C3=0.1F
4.254
4.252
C3=0.01F
4.250
4.248
4.246
0
200
400
600
800
1000
External resistance R1()
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
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2000.12.31
Silan
Semiconductors SC451XX
PACKAGE OUTLINE
SOT-26
UNIT: mm
0 ~ 15 o
2.9±0.2
1.6±0.2
2.8±0.2
MIN 0.2
0 ~ 0.1
0.40
0.95
0.95
0.15
1.1±0.2
1.0 ~ 1.3
1.9±0.2
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0
13
2000.12.31