MRF5176 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD FEATURES: A 45° • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System C E E B B C D J MAXIMUM RATINGS E IC 2.0 A VCBO 60 V VCEO 33 V VEBO 4.0 V PDISS 30 W @ TC = 25 °C G H K -65 °C to +200 °C θJC MAXIMUM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 .572 / 14.53 .130 / 3.30 G .245 / 6.22 H TSTG #8-32 UNC DIM F TJ I F .255 / 6.48 .640 / 16.26 -65 °C to +150 °C I J .175 / 4.45 .217 / 5.51 6.0 °C/W K .275 / 6.99 .285 / 7.24 CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 60 V BVCEO IC = 50 mA 33 V BVEBO IE = 5.0 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V PG ηD VCC = 28 V IC = 500 mA 10 f = 1.0 MHz POUT = 15 W f = 400 MHz 10 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 100 --- 25 pF dB % REV. A 1/1