PT9700 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9700 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class C Operation • PG = 13 dB at 1.0 W/400 MHz • Omnigold™ Metalization System E B E B C D J E MAXIMUM RATINGS IC 2.0 A VCBO 45 V VCEO 25 V VEBO 3.5 V G H K PDISS 31.8 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 20 °C/W MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I CHARACTERISTICS #8-32 UNC DIM G J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 TC = 25 °C NONETEST CONDITIONS SYMBOL I F MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 20 mA 24 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηD VCC = 28 V IC = 100 mA 15 f = 1.0 MHz POUT = 1.0 W f = 400 MHz 13 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.45 mA 120 --- 5.0 pF dB % REV. A 1/1