ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-39GE The ASI ULBM2TE is Designed for B C FEATURES: ØA 45° • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC 0.40 A VCBO 36 V VCEO 16 V G 4.0 V PDISS 5 W @ TC = 25 OC O -65 C to +200 C TJ TSTG -65 OC to +150 OC θ JC 35 OC/W CHARACTERISTICS SYMBOL B .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .355 / 9.020 .370 / 9.370 E .315 / 8.010 .335 / 8.500 F .165 / 4.200 .180 / 4.570 G .500 / 12.700 .750 / 19.050 H .016 / 0.410 .020 / 0.508 ORDER CODE: ASI10679 O NONETEST CONDITIONS IC = 50 mA BVCES IC = 50 mA BVEBO IE = 1.0 mA ICBO VCB = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V ηC .200 / 5.080 TC = 25 C BVCEO PG inches / mm inches / mm A O MAXIMUM MINIMUM DIM VEBO H VCE = 12.5 V RBE = 10 Ω IC = 50 mA MINIMUM TYPICAL MAXIMUM V 36 V 4.0 V 20 f = 1.0 MHz POUT = 2.0 W f = 470 MHz UNITS 16 8.0 mA 200 --- 10 pF dB 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 % REV. A 1/1