Preliminary Technical Information HiPerFETTM Power MOSFETs Q2-Class IXFH14N100Q2 VDSS = = ID25 RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 1000V 14A Ω 950mΩ 300ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 14 A IDM TC = 25°C, pulse width limited by TJM 56 A IA TC = 25°C 14 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 500 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6mm (0.063 in) from case for 10s Md Mounting torque Weight 1.13/10 Nm/lb.in. 6 g G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. 1000 VDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 3.0 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ±200 nA 25 μA 1 mA 950 mΩ DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages Easy to mount Space savings High power density DS99073A(5/08) IXFH14N100Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 15 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-247 (IXFH) Outline 28 S 2800 pF 287 pF 100 pF 12 ns 1 2 td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 10 ns td(off) RG = 2Ω (External) 28 ns tf 12 ns Qg(on) 83 nC Terminals: 1 - Gate 20 nC Dim. 40 nC Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthCK Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 14 A ISM Repetitive, pulse width limited by TJM 56 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100 A/μs, VR = 100 V Notes: e 0.25 °C/W RthJC 0.8 7 ∅P 3 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 300 ns μC A 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXFH14N100Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 27 14 VGS = 10V 7V 8V 21 I D - Amperes 10 I D - Amperes V GS = 10V 24 12 8 6 6V 18 7V 15 12 9 6V 4 6 2 3 5V 5V 0 0 0 2 4 6 8 10 12 0 14 3 6 9 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 21 24 27 30 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 14 3.2 V GS = 10V 7V VGS = 10V 2.8 R D S (on) - Normalized 12 I D - Amperes 12 15 18 V DS - Volts 10 6V 8 6 4 2 2.4 2.0 I D = 14A I D = 7A 1.6 1.2 0.8 5V 0 0 4 8 12 16 20 24 0.4 -50 28 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D Fig. 6. Drain Current vs. Case Temperature 150 16 2.6 V GS = 10V 2.4 14 T J = 125ºC 2.2 12 2.0 I D - Amperes R D S (on) - Normalized -25 VDS - Volts 1.8 1.6 1.4 10 8 6 4 1.2 T J = 25ºC 2 1.0 0.8 0 3 6 9 12 I D 15 - Amperes © 2008 IXYS CORPORATION, All rights reserved 18 21 24 27 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFH14N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 28 20 T J = - 40ºC 18 24 14 T J = 125ºC 12 25ºC 10 20 g f s - Siemens I D - Amperes 16 - 40ºC 8 6 25ºC 16 125ºC 12 8 4 4 2 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 4 8 V GS - Volts I 20 24 28 Fig. 10. Gate Charge 45 10 40 9 35 8 VDS = 500V I D = 7A I G = 10mA 7 30 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 12 16 - Amperes D 25 20 T J = 125ºC 15 6 5 4 3 T J = 25ºC 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 10 20 30 Q V SD - Volts G 40 50 60 70 80 90 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10000 1 Z (th) J C - (ºC/W) Capacitance - pF Ciss 1000 Coss 100 0.1 0.01 Crss f = 1MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_14N100Q2 (7F)5-28-08-B