IXYS IXFK40N50Q2

Preliminary Technical Information
IXFK40N50Q2
HiPerFETTM
Power MOSFET
Q2-Class
VDSS
=
=
ID25
RDS(on) ≤
≤
trr
500V
40A
Ω
160mΩ
250ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
40
A
IDM
TC = 25°C, pulse width limited by TJM
160
A
IA
TC = 25°C
40
A
EAS
TC = 25°C
2.5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
560
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
1.13/10
Nm/lb.in.
10
g
TJ
TL
1.6mm (0.063 in) from case for 10s
Md
Mounting torque
Weight
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Double metal process for low gate
resistance
International standard package
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 4mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
V
5.5
V
±200
nA
25 μA
1 mA
160
mΩ
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Easy to mount
Space savings
High power density
DS100035(08/08)
IXFK40N50Q2
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
15
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
TO-264 (IXFK) Outline
28
S
4850
pF
680
pF
170
pF
17
ns
td(on)
Resistive Switching Times
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
13
ns
td(off)
RG = 2Ω (External)
42
ns
8
ns
110
nC
25
nC
50
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.22 °C/W
RthJC
RthCK
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
160 A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
trr
QRM
IRM
IF = 25A, -di/dt = 100 A/μs, VR = 100 V
Notes:
40 A
1
9
V
250 ns
μC
A
1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
7,005,734 B2
6,759,692
7,063,975 B2
6,771,478 B2 7,071,537
7,157,338B2
IXFK40N50Q2
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25ºC
@ 25ºC
40
90
VGS = 10V
35
VGS = 10V
80
7V
30
6V
25
20
I D - Amperes
I D - Amperes
8V
70
5.5V
15
5V
10
60
7V
50
40
6V
30
20
4.5V
5
10
0
5V
0
0
1
2
3
4
5
6
0
7
3
6
9
12
15
18
21
24
27
30
VD S - Volts
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to 0.5 I D25 Value
vs. Junction Temperature
40
3.2
V GS = 10V
35
7V
R D S ( o n ) - Normalized
I D - Amperes
30
5.5V
25
V GS = 10V
2.8
6V
20
5V
15
10
4.5V
2.4
2.0
I D = 40A
1.6
I D = 20A
1.2
0.8
5
0.4
0
0
2
4
6
8
10
12
14
-50
16
-25
0
VD S - Volts
Fig. 5. RDS(on) Normalized to 0.5 I D25 Value
50
75
100
125
150
125
150
Fig. 6. Drain Current vs. Case
Temperature
vs. I D
45
3.4
40
V GS = 10V
3.0
TJ = 125ºC
35
2.6
I D - Amperes
R D S ( o n ) - Normalized
25
TJ - Degrees Centigrade
2.2
1.8
30
25
20
15
1.4
10
TJ = 25ºC
1.0
5
0.6
0
0
10
20
30
40
I
D
50
60
- Amperes
© 2008 IXYS CORPORATION, All rights reserved
70
80
90
100
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
IXFK40N50Q2
Fig. 8. Transconductance
50
55
45
50
40
45
TJ = - 40ºC
40
35
30
TJ = 125ºC
25
25ºC
- 40ºC
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
20
15
25ºC
35
30
125ºC
25
20
15
10
10
5
5
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
5
10 15
20 25
I
V G S - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
120
110
9
VDS = 250V
8
ID = 20A
7
IG = 10m A
100
90
80
VG S - Volts
I S - Amperes
40 45
50 55
60 65
- Amperes
Fig. 10. Gate Charge
10
70
60
50
TJ = 125ºC
40
30 35
D
6
5
4
3
30
20
2
TJ = 25ºC
1
10
0
0
0.4
0.5
0.6
0.7
VS
0.8
D
0.9
1.0
1.1
1.2
0
20
30
Q
40
G
50
60
70
80
90 100 110
- nanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10000
1000
Ciss
I D - Amperes
Capacitance - picoFarads
10
- Volts
Coss
1000
RDS(on) Limit
100
25µs
100µs
1ms
10
Crss
TJ = 150ºC
TC = 25ºC
f = 1MHz
Single Pulse
1
100
0
5
10
10m s
DC
15
20
25
30
35
40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VD S - Volts
1000
IXFK40N50Q2
Fig. 13. Maximum Transient Thermal Impedance
0.10
Z(th
)JC
- ºC / W
1.00
0.01
0.00
0.1
1
10
100
1000
10000
Pulse Width - milliseconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_40N50Q2 (84)5-28-08-C