HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 VDSS = = ID25 RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 40 A IDM TC = 25°C, pulse width limited by TJM 160 A IA TC = 25°C 40 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 560 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g TJ TL 1.6mm (0.063 in) from case for 10s Md Mounting torque Weight G (TAB) D G = Gate S = Source S D = Drain TAB = Drain Features Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ±200 nA 25 μA 1 mA 160 mΩ DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages Easy to mount Space savings High power density DS98970D(5/08) IXFH40N50Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 15 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-247 (IXFH) Outline 28 S 4850 pF 680 pF 170 pF 17 ns 1 2 td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 13 ns td(off) RG = 2Ω (External) 42 ns 8 ns 110 nC Terminals: 1 - Gate 25 nC Dim. 50 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthCK Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM 160 A VSD IF = IS, VGS = 0 V, Note 1 1.5 trr QRM IRM IF = 25A, -di/dt = 100 A/μs, VR = 100 V Notes: e 0.22 °C/W RthJC ∅P 3 40 A 1 9 V 250 ns μC A 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXFH40N50Q2 Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25ºC @ 25ºC 40 90 VGS = 10V 35 VGS = 10V 80 7V 30 6V 25 20 I D - Amperes I D - Amperes 8V 70 5.5V 15 5V 10 60 7V 50 40 6V 30 20 4.5V 5 10 0 5V 0 0 1 2 3 4 5 6 0 7 3 6 9 12 15 18 21 24 27 30 VD S - Volts V D S - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 40 3.2 V GS = 10V 35 7V R D S ( o n ) - Normalized I D - Amperes 30 5.5V 25 V GS = 10V 2.8 6V 20 5V 15 10 4.5V 2.4 2.0 I D = 40A 1.6 I D = 20A 1.2 0.8 5 0.4 0 0 2 4 6 8 10 12 14 -50 16 -25 0 VD S - Volts Fig. 5. RDS(on) Normalized to 0.5 I D25 Value 50 75 100 125 150 125 150 Fig. 6. Drain Current vs. Case Temperature vs. I D 45 3.4 40 V GS = 10V 3.0 TJ = 125ºC 35 2.6 I D - Amperes R D S ( o n ) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 30 25 20 15 1.4 10 TJ = 25ºC 1.0 5 0.6 0 0 10 20 30 40 I D 50 60 - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFH40N50Q2 Fig. 8. Transconductance 50 55 45 50 40 45 TJ = - 40ºC 40 35 30 TJ = 125ºC 25 25ºC - 40ºC g f s - Siemens I D - Amperes Fig. 7. Input Admittance 20 15 25ºC 35 30 125ºC 25 20 15 10 10 5 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 20 25 I V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 120 110 9 VDS = 250V 8 ID = 20A 7 IG = 10m A 100 90 80 VG S - Volts I S - Amperes 40 45 50 55 60 65 - Amperes Fig. 10. Gate Charge 10 70 60 50 TJ = 125ºC 40 30 35 D 6 5 4 3 30 20 2 TJ = 25ºC 1 10 0 0 0.4 0.5 0.6 0.7 VS 0.8 D 0.9 1.0 1.1 1.2 0 20 30 Q 40 G 50 60 70 80 90 100 110 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 Ciss I D - Amperes Capacitance - picoFarads 10 - Volts Coss 1000 RDS(on) Limit 100 25µs 100µs 1ms 10 Crss TJ = 150ºC TC = 25ºC f = 1MHz Single Pulse 1 100 0 5 10 10m s DC 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VD S - Volts 1000 IXFH40N50Q2 Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 100 1000 10000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_40N50Q2 (84)5-28-08-C