Preliminary Technical Information PolarTM Power MOSFET IXTK140N30P VDSS ID25 = 300V = 140A Ω ≤ 24mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 ILRMS IDM TC = 25°C Terminal Current Limit TC = 25°C, pulse width limited by TJM 140 75 300 A A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 80 80 5 A mJ J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 10 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-264 Maximum Ratings 300 300 V V G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z Fast intrinsic diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 500μA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0 V RDS(on) V 5.0 V ± 200 nA Applications z z z 1 μA 250 μA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved Easy to mount Space savings High power density 20 z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls 24 mΩ DS99980(5/08) IXTK140N30P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264 (IXTK) Outline 90 S 14.8 nF 1830 pF 55 pF Crss td(on) Resistive Switching Times 30 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 ns td(off) RG = 1Ω (External) 100 ns 20 ns 185 nC 72 nC 60 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.12 °C/W RthJC RthCK 0.15 Source-Drain Diode °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 140 A ISM Repetitive, pulse width limited by TJM 300 A VSD IF = 90A, VGS = 0V 1.3 V trr IF = 25A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 250 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 ns Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK140N30P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 280 VGS = 10V 8V 120 100 200 7V ID - Amperes ID - Amperes VGS = 10V 8V 240 80 60 6V 160 7V 120 6V 40 80 20 40 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 140 12 14 16 18 20 3.2 VGS = 10V 8V 7V VGS = 10V 2.8 RDS(on) - Normalized 120 100 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 80 6V 60 40 5V 20 2.4 I D = 140A 2.0 I D = 70A 1.6 1.2 0.8 0 0.4 0 1 2 3 4 5 6 7 -50 8 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 90 3.0 2.8 VGS = 10V External Lead Current Limit 80 TJ = 125ºC 2.6 70 2.4 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.2 2.0 1.8 1.6 60 50 40 30 1.4 20 1.2 TJ = 25ºC 10 1.0 0.8 0 0 40 80 120 160 ID - Amperes © 2008 IXYS CORPORATION,All rights reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTK140N30P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 160 120 140 g f s - Siemens ID - Amperes 100 120 TJ = 125ºC 25ºC - 40ºC 100 80 TJ = - 40ºC 25ºC 125ºC 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 160 180 200 Fig. 10. Gate Charge 10 300 VDS = 150V 9 I D = 70A 250 8 I G = 10mA 7 200 VGS - Volts IS - Amperes 80 ID - Amperes 150 100 TJ = 125ºC 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 TJ = 150ºC TC = 25ºC Single Pulse RDS(on) Limit 10,000 1,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 25µs 100 100µs 1ms 100 10ms Crss f = 1 MHz DC 10 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 IXTK140N30P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION,All rights reserved IXYS REF: F_140N30P(93)5-13-08-B