TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com 4.5V to 17V Input, 6A Synchronous Step Down SWIFT™ Converter With Light Load Efficiency and Hiccup Over Current Protection Check for Samples: TPS54623 FEATURES • 1 • • • • • • • • • • Integrated 26mΩ / 19mΩ MOSFETs Split Power Rail: 1.6V to 17V on PVIN 200kHz to 1.6MHz Switching Frequency Light Load Efficient with Pulse Skip Synchronizes to External Clock 0.6V ±1% Voltage Reference Over Temperature Low 2µA Shutdown Quiescent Current Monotonic Start-Up into Pre-biased Outputs –40°C to 150°C Operating Junction Temperature Range Adjustable Slow Start/Power Sequencing • • • Power Good Output Monitor for Undervoltage and Overvoltage Adjustable Input Undervoltage Lockout Supported by SwitcherPro™ Software Tool For SWIFT™ Documentation and SwitcherPro™, visit http://www.ti.com/swift APPLICATIONS • • • High Density Distributed Power Systems High Performance Point of Load Regulation Broadband, Networking and Optical Communications Infrastructure DESCRIPTION The TPS54623 in thermally enhanced 3.5mm x 3.5mm QFN package is a full featured 17V, 6A synchronous step down converter which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and by selecting a high switching frequency, reducing the inductor's footprint. The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins. Cycle by cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Hiccup protection will be triggered if the overcurrent condition has persisted for longer than the preset time. Thermal hiccup protection disables the device when the die temperature exceeds the thermal shutdown temperature and enables the part again after the built-in thermal shutdown hiccup time. The TPS54623 operates at continuous current mode (CCM) at higher load conditions while skipping pulses to boost the efficiency at light loads. WHITE SPACE SIMPLIFIED SCHEMATIC 100 Cin 95 90 Cboot VOUT Lo EN PH PWRGD Co VSENSE SS/TR RT/CLK GND COMP Css Rrt C2 R3 C1 Exposed Thermal Pad R1 Efficiency - % PVIN VIN TPS54622 TPS54623 BOOT VIN 85 Vin = 8 V 80 Vin = 12 V 75 Vin = 17 V 70 65 60 R2 55 50 0 1 2 3 4 5 6 Output Current - A 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011, Texas Instruments Incorporated TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) TJ PACKAGE –40°C to 150°C (1) (2) 14 Pin QFN PART NUMBER Small Reel (2) TPS54623RHLT Large Reel (2) TPS54623RHLR For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. See the application section of the datasheet for layout information. ABSOLUTE MAXIMUM RATINGS (1) over operating temperature range (unless otherwise noted) Input Voltage Output Voltage VALUE UNIT VIN –0.3 to 20 V PVIN –0.3 to 20 V EN –0.3 to 6 V BOOT –0.3 to 27 V VSENSE –0.3 to 3 V COMP –0.3 to 3 V PWRGD –0.3 to 6 V SS/TR –0.3 to 3 V RT/CLK –0.3 to 6 V BOOT-PH 0 to 7.5 V PH –1 to 20 V PH 10ns Transient –3 to 20 V –0.2 to 0.2 V Vdiff (GND to exposed thermal pad) Source Current Sink Current ±100 µA PH Current Limit A PH Current Limit A PVIN Current Limit A ±200 µA –0.1 to 5 mA 2 kV RT/CLK COMP PWRGD Electrostatic Discharge (HBM) QSS 009-105 (JESD22-A114A) Electrostatic Discharge (CDM) QSS 009-147 (JESD22-C101B.01) 500 V Operating Junction Temperature –40 to 150 °C Storage Temperature –65 to 150 °C (1) 2 Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com THERMAL INFORMATION TPS54623 THERMAL METRIC (1) (2) QFN UNITS 14 PINS θJA Junction-to-ambient thermal resistance 47.2 (3) θJA Junction-to-ambient thermal resistance θJCtop Junction-to-case (top) thermal resistance 64.8 θJB Junction-to-board thermal resistance 14.4 ψJT Junction-to-top characterization parameter 0.5 ψJB Junction-to-board characterization parameter 14.7 θJCbot Junction-to-case (bottom) thermal resistance 3.2 (1) (2) (3) 32 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below 150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more information. Test board conditions: (a) 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch (b) 2 oz. copper traces located on the top of the PCB (c) 2 oz. copper ground planes on the 2 internal layers and bottom layer (d) 4 0.010 inch thermal vias located under the device package ELECTRICAL CHARACTERISTICS TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN AND PVIN PINS) PVIN operating input voltage 1.6 17 V VIN operating input voltage 4.5 17 V VIN internal UVLO threshold VIN rising 4.0 VIN internal UVLO hysteresis 4.5 V 150 VIN shutdown supply Current EN = 0 V VIN operating – non switching supply current VSENSE = 810 mV mV 2 5 μA 250 500 μA 1.21 1.26 V ENABLE AND UVLO (EN PIN) Enable threshold Rising Enable threshold Falling Input current EN = 1.1 V 1.15 μA Hysteresis current EN = 1.3 V 3.3 μA 1.10 1.17 VOLTAGE REFERENCE 0 A ≤ IOUT ≤ 6 A Voltage reference 0.594 0.6 0.606 V MOSFET High-side switch resistance BOOT-PH = 3 V 32 60 mΩ High-side switch resistance (1) BOOT-PH = 6 V 26 40 mΩ VIN = 12 V 19 30 mΩ Low-side Switch Resistance (1) ERROR AMPLIFIER Error amplifier Transconductance (gm) –2 μA < ICOMP < 2 μA, V(COMP) = 1 V Error amplifier dc gain VSENSE = 0.8 V Error amplifier source/sink V(COMP) = 1 V, 100 mV input overdrive Start Switching Peak Current Threshold COMP to Iswitch gm 1000 1300 μMhos 3100 V/V ±110 μA 1 A 16 A/V CURRENT LIMIT (1) Measured at pins Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 3 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com ELECTRICAL CHARACTERISTICS (continued) TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 8 11 14 6.5 10 15 A Low-side switch sinking current limit 200 600 mA Hiccup wait time 512 Cycles 16384 Cycles High-side switch current limit threshold Low-side switch sourcing current limit Hiccup time before re-start UNIT A THERMAL SHUTDOWN Thermal shutdown 160 Thermal shutdown hysteresis °C 175 °C 10 Thermal shutdown hiccup time 16384 Cycles TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN) Minimum switching frequency Rrt = 240 kΩ (1%) 160 200 240 kHz Switching frequency Rrt = 100 kΩ (1%) 400 480 560 kHz Maximum switching frequency Rrt = 29 kΩ (1%) 1440 1600 1760 kHz Minimum pulse width 20 RT/CLK high threshold 2 RT/CLK low threshold RT/CLK falling edge to PH rising edge delay ns 0.8 Measure at 500 kHz with RT resistor in series Switching frequency range (RT mode set point and PLL mode) V V 66 200 ns 1600 kHz 145 ns PH (PH PIN) Minimum on time Measured at 90% to 90% of VIN, 25°C, IPH = 2A Minimum off time BOOT-PH ≥ 3 V 94 0 ns BOOT (BOOT PIN) BOOT-PH UVLO 2.1 3 V SLOW START AND TRACKING (SS/TR PIN) SS charge current SS/TR to VSENSE matching μA 2.3 V(SS/TR) = 0.4 V 20 60 mV VSENSE falling (Fault) 92 % Vref VSENSE rising (Good) 94 % Vref VSENSE rising (Fault) 106 % Vref VSENSE falling (Good) 104 % Vref POWER GOOD (PWRGD PIN) VSENSE threshold Output high leakage VSENSE = Vref, V(PWRGD) = 5.5 V Output low I(PWRGD) = 2 mA Minimum VIN for valid output V(PWRGD) < 0.5V at 100 μA Minimum SS/TR voltage for PWRGD 4 Submit Documentation Feedback 30 0.6 100 nA 0.3 V 1 V 1.4 V Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com DEVICE INFORMATION PIN ASSIGNMENTS RHL PACKAGE (TOP VIEW) RT/CLK PWRGD 1 14 GND 2 13 BOOT GND 3 PVIN 4 PVIN 5 12 PH Exposed Thermal Pad (15) VIN 6 11 PH 10 EN 9 SS/TR 7 VSENSE 8 COMP PIN FUNCTIONS PIN DESCRIPTION NAME # RT/CLK 1 Automatically selects between RT mode and CLK mode. An external timing resistor adjusts the switching frequency of the device; In CLK mode, the device synchronizes to an external clock. GND 2, 3 Return for control circuitry and low-side power MOSFET. PVIN 4, 5 Power input. Supplies the power switches of the power converter. VIN 6 Supplies the control circuitry of the power converter. VSENSE 7 Inverting input of the gm error amplifier. COMP 8 Error amplifier output, and input to the output switch current comparator. Connect frequency compensation to this pin. SS/TR 9 Slow-start and tracking. An external capacitor connected to this pin sets the internal voltage reference rise time. The voltage on this pin overrides the internal reference. It can be used for tracking and sequencing. EN 10 Enable pin. Float to enable. Adjust the input undervoltage lockout with two resistors. PH 11, 12 The switch node. BOOT 13 A bootstrap cap is required between BOOT and PH. The voltage on this cap carries the gate drive voltage for the high-side MOSFET. PWRGD 14 Power Good fault pin. Asserts low if output voltage is low due to thermal shutdown, dropout, over-voltage, EN shutdown or during slow start. Exposed Thermal PAD 15 Thermal pad of the package and signal ground and it must be soldered down for proper operation. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 5 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com FUNCTIONAL BLOCK DIAGRAM PWRGD VIN EN Shutdown Ip Ih Enable Comparator Thermal Hiccup PVIN PVIN UVLO Shutdown UV Shutdown Logic Logic Enable Threshold Hiccup Shutdown OV Boot Charge Current Sense Minimum Clamp Pulse Skip ERROR AMPLIFIER VSENSE BOOT Boot UVLO SS/TR HS MOSFET Current Comparator Voltage Reference Power Stage & Deadtime Control Logic PH PH Slope Compensation VIN Regulator Hiccup Shutdown Overload Recovery Oscillator with PLL Maximum Clamp LS MOSFET Current Limit Current Sense GND GND COMP 6 RT/CLK Submit Documentation Feedback EXPOSED THERMAL PAD Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TYPICAL CHARACTERISTICS CHARACTERISTIC CURVES HIGH-SIDE RDS(on) vs TEMPERATURE LOW-SIDE RDS(on) vs TEMPERATURE 30 40 VIN = 12 V RDS(on) − On Resistance − mΩ RDS(on) − On Resistance − mΩ VIN = 12 V 35 30 25 20 −50 −25 0 25 50 75 100 125 27 24 21 18 15 −50 150 −25 TJ − Junction Temperature − °C 0 75 100 125 150 Figure 2. VOLTAGE REFERENCE vs TEMPERATURE OSCILLATOR FREQUENCY vs TEMPERATURE 485 fO − Oscillator Frequency − kHz 0.606 Vref − Voltage Reference − V 50 TJ − Junction Temperature − °C Figure 1. 0.604 0.602 0.600 0.598 0.596 0.594 −50 25 −25 0 25 50 75 100 125 480 475 470 RT = 100 kΩ 465 −50 150 −25 0 25 50 75 100 125 150 TJ − Junction Temperature − °C TJ − Junction Temperature − °C Figure 4. SHUTDOWN QUIESCENT CURRENT vs INPUT VOLTAGE EN PIN HYSTERESIS CURRENT vs TEMPERATURE N μ Isd – Shutdown Quiescent Current – mA Figure 3. Figure 5. Figure 6. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 7 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) PIN PULL-UP CURRENT vs TEMPERATURE PIN UVLO THRESHOLD vs TEMPERATURE 1.220 μ En Pin UVLO Threshold − V VIN = 12 V 1.215 1.210 1.205 1.200 −50 −25 25 50 75 100 125 150 TJ − Junction Temperature − °C °C Non-Switching Operating Quiescent Current −µA 0 Figure 7. Figure 8. NON-SWITCHING OPERATING QUIESCENT CURRENT (VIN) vs INPUT VOLTAGE SLOW START CHARGE CURRENT vs TEMPERATURE 2.5 ISS − Slow Start Charge Current − µA 400 350 TJ = 150°C 300 250 TJ = 25°C 200 150 TJ = -40°C 6 2.3 2.2 2.1 −50 100 3 2.4 9 −25 18 15 12 0 25 50 75 100 125 150 TJ − Junction Temperature − °C VI − Input Voltage − V Figure 9. Figure 10. (SS/TR - VSENSE) OFFSET vs TEMPERATURE PWRGD THRESHOLD vs TEMPERATURE 120 ISS − SS Charge Current − μA Voff − SS/TR to Vsense Offset − V 0.040 0.030 0.020 0.010 −50 −25 0 25 50 75 100 125 150 Vin = 12 V 110 VSENSE Rising VSENSE Rising 90 VSENSE Falling 80 −50 TJ − Junction Temperature − °C −25 0 25 50 75 100 125 150 TJ − Junction Temperature − °C Figure 11. 8 VSENSE Falling 100 Figure 12. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) HIGH-SIDE CURRENT LIMIT THRESHOLD vs INPUT VOLTAGE MINIMUM CONTROLLABLE ON TIME vs TEMPERATURE 140 Minimum Controllable On Time − ns IcI − Current Limit Threshold − A 13 12 11 10 TJ = −40°C 9 TJ = 25°C TJ = 150°C 8 7 6 5 9 13 120 110 100 90 VIN = 12 V 80 −50 5 1 130 17 −25 0 25 50 75 100 125 150 TJ − Junction Temperature − °C VI − Input Voltage − V Figure 13. Figure 14. MINIMUM CONTROLLABLE DUTY RATIO vs JUNCTION TEMPERATURE BOOT-PH UVLO THRESHOLD vs TEMPERATURE 6.0 5.0 RT = 100 kΩ VIN = 12 V BOOT-PH UVLO Threshold – V 7.0 4.0 °C Figure 15. Figure 16. OVERVIEW The device is a 17-V, 6-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To improve performance during line and load transients the device implements a constant frequency, peak current mode control which also simplifies external frequency compensation. The wide switching frequency of 200 kHz to 1600 kHz allows for efficiency and size optimization when selecting the output filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin. The device also has an internal phase lock loop (PLL) controlled by the RT/CLK pin that can be used to synchronize the switching cycle to the falling edge of an external system clock. The device has been designed for safe monotonic startup into pre-biased loads. The default start up is when VIN is typically 4.0V. The EN pin has an internal pull-up current source that can be used to adjust the input voltage under voltage lockout (UVLO) with two external resistors. In addition, the EN pin can be floating for the device to operate with the internal pull-up current. The total operating current for the device is approximately 600μA when not switching and under no load. When the device is disabled, the supply current is typically less than 2μA. The integrated MOSFETs allow for high efficiency power supply designs with continuous output currents up to 6 amperes. The MOSFETs have been sized to optimize efficiency for lower duty cycle applications. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 9 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TYPICAL CHARACTERISTICS (continued) The device reduces the external component count by integrating the boot recharge circuit. The bias voltage for the integrated high-side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor voltage is monitored by a BOOT to PH UVLO (BOOT-PH UVLO) circuit allowing PH pin to be pulled low to recharge the boot capacitor. The device can operate at 100% duty cycle as long as the boot capacitor voltage is higher than the preset BOOT-PH UVLO threshold which is typically 2.1V. The output voltage can be stepped down to as low as the 0.6V voltage reference (Vref). The device has a power good comparator (PWRGD) with hysteresis which monitors the output voltage through the VSENSE pin. The PWRGD pin is an open drain MOSFET which is pulled low when the VSENSE pin voltage is less than 92% or greater than 106% of the reference voltage Vref and asserts high when the VSENSE pin voltage is 94% to 104% of the Vref. The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing during power up. A small value capacitor or resistor divider should be coupled to the pin for slow start or critical power supply sequencing requirements. The device is protected from output overvoltage, overload and thermal fault conditions. The device minimizes excessive output overvoltage transients by taking advantage of the overvoltage circuit power good comparator. When the overvoltage comparator is activated, the high-side MOSFET is turned off and prevented from turning on until the VSENSE pin voltage is lower than 104% of the Vref. The device implements both high-side MOSFET overload protection and bidirectional low-side MOSFET overload protections which help control the inductor current and avoid current runaway. The device also shuts down if the junction temperature is higher than thermal shutdown trip point. The device is restarted under control of the slow start circuit automatically after the built-in thermal shutdown hiccup time. The TPS54623 monitors the peak switch current of the high-side MOSFET. Once the peak switch current is lower than typically 1A, the device stops switching to boost the efficiency until the peak switch current is higher than typically 1A again. DETAILED DESCRIPTION Fixed Frequency PWM Control The device uses a adjustable fixed frequency, peak current mode control. The output voltage is compared through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives the COMP pin. An internal oscillator initiates the turn on of the high-side power switch. The error amplifier output is converted into a current reference which compares to the high-side power switch current. When the power switch current reaches current reference generated by the COMP voltage level the high-side power switch is turned off and the low-side power switch is turned on. Continuous Current Mode Operation (CCM) As a synchronous buck converter, the device normally works in CCM (Continuous Conduction Mode) under load conditions where the minimum inductor valley current is higher than 0A. Light Load Efficiency Operation The TPS54623 operates in pulse skip mode (Figure 18) at light load currents to improve efficiency by reducing switching and gate drive losses. The TPS54623 is designed so that if the output voltage is within regulation and the peak switch current at the end of any switching cycle is below the pulse skipping current threshold, the device enters pulse skip mode.This current threshold is the current level corresponding to a nominal COMP voltage of 250mV. When in pulse skip mode, the COMP pin voltage is clamped and the high side MOSFET is inhibited. Further decreases in load current or in output voltage can not drive the COMP pin below this clamp voltage level. Since the device is not switching, the output voltage begins to decay. As the voltage control loop compensates for the falling output voltage, the COMP pin voltage begins to rise. At this time, the high side MOSFET is enabled and a switching pulse initiates on the next switching cycle. The peak current is set by the COMP pin voltage. The output voltage re-charges the regulated value, then the peak switch current starts to decrease, and eventually falls below the pulse skip mode threshold at which time the device again enters pulse skip mode. 10 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com Figure 17. TPS54623 Operation In Current Mode Figure 18. TPS54623 Operation In Pulse Skipping Mode VIN and Power VIN Pins (VIN and PVIN) The device allows for a variety of applications by using the VIN and PVIN pins together or separately. The VIN pin voltage supplies the internal control circuits of the device. The PVIN pin voltage provides the input voltage to the power converter system. If tied together, the input voltage for VIN and PVIN can range from 4.5V to 17V. If using the VIN separately from PVIN, the VIN pin must be between 4.5V and 17V, and the PVIN pin can range from as low as 1.6V to 17V. A voltage divider connected to the EN pin can adjust the either input voltage UVLO appropriately. Adjusting the input voltage UVLO on the PVIN pin helps to provide consistent power up behavior. Voltage Reference The voltage reference system produces a precise ±1% voltage reference over temperature by scaling the output of a temperature stable bandgap circuit. Adjusting the Output Voltage The output voltage is set with a resistor divider from the output (VOUT) to the VSENSE pin. It is recommended to use 1% tolerance or better divider resistors. Referring to the application schematic of Figure 31, start with a 10 kΩ for R6 and use Equation 1 to calculate R5. To improve efficiency at light loads consider using larger value resistors. If the values are too high the regulator is more susceptible to noise and voltage errors from the VSENSE input current are noticeable. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 11 TPS54623 SLVSB09 – SEPTEMBER 2011 R5 = www.ti.com Vo - Vref R6 Vref (1) Where Vref = 0.6V The minimum output voltage and maximum output voltage can be limited by the minimum on time of the high-side MOSFET and bootstrap voltage (BOOT-PH voltage) respectively. More discussions are located in Minimum Output Voltage and Bootstrap Voltage (BOOT) and Low Dropout Operation. Safe Start-up into Pre-Biased Outputs The device has been designed to prevent the low-side MOSFET from discharging a pre-biased output. During monotonic pre-biased startup, the low-side MOSFET is not allowed to sink current until the SS/TR pin voltage is higher than 1.4V. Error Amplifier The device uses a transconductance error amplifier. The error amplifier compares the VSENSE pin voltage to the lower of the SS/TR pin voltage or the internal 0.6V voltage reference. The transconductance of the error amplifier is 1300 μA/V during normal operation. The frequency compensation network is connected between the COMP pin and ground. Slope Compensation The device adds a compensating ramp to the switch current signal. This slope compensation prevents sub-harmonic oscillations. The available peak inductor current remains constant over the full duty cycle range. Enable and Adjusting Under-Voltage Lockout The EN pin provides electrical on/off control of the device. Once the EN pin voltage exceeds the threshold voltage, the device starts operation. If the EN pin voltage is pulled below the threshold voltage, the regulator stops switching and enters low Iq state. The EN pin has an internal pull-up current source, allowing the user to float the EN pin for enabling the device. If an application requires controlling the EN pin, use open drain or open collector output logic to interface with the pin. The device implements internal UVLO circuitry on the VIN pin. The device is disabled when the VIN pin voltage falls below the internal VIN UVLO threshold. The internal VIN UVLO threshold has a hysteresis of 150mV. If an application requires either a higher UVLO threshold on the VIN pin or a secondary UVLO on the PVIN, in split rail applications, then the EN pin can be configured as shown in Figure 19, Figure 20 and Figure 21. When using the external UVLO function it is recommended to set the hysteresis to be greater than 500mV. The EN pin has a small pull-up current Ip which sets the default state of the pin to enable when no external components are connected. The pull-up current is also used to control the voltage hysteresis for the UVLO function since it increases by Ih once the EN pin crosses the enable threshold. The UVLO thresholds can be calculated using Equation 2 and Equation 3. TPS54623 VIN ip ih R1 R2 EN Figure 19. Adjustable VIN Under Voltage Lock Out 12 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TPS54623 PVIN ip ih R1 R2 EN Figure 20. Adjustable PVIN Under Voltage Lock Out, VIN ≥ 4.5V TPS54623 PVIN VIN ip ih R1 R2 EN Figure 21. Adjustable VIN and PVIN Under Voltage Lock Out æV ö VSTART ç ENFALLING ÷ - VSTOP è VENRISING ø R1 = æ V ö Ip ç1 - ENFALLING ÷ + Ih VENRISING ø è R2 = VSTOP (2) R1´ VENFALLING - VENFALLING + R1(Ip + Ih ) (3) Where Ih = 3.4 μA, Ip = 1.15 μA, VENRISING = 1.21 V, VENFALLING = 1.17 V Adjustable Switching Frequency and Synchronization (RT/CLK) The RT/CLK pin can be used to set the switching frequency of the device in two modes. In RT mode, a resistor (RT resistor) is connected between the RT/CLK pin and GND. The switching frequency of the device is adjustable from 200 kHz to 1600 kHz by placing a maximum of 240 kΩ and minimum of 29 kΩ respectively. In CLK mode, an external clock is connected directly to the RT/CLK pin. The device is synchronized to the external clock frequency with PLL. The CLK mode overrides the RT mode. The device is able to detect the proper mode automatically and switch from the RT mode to CLK mode. Adjustable Switching Frequency (RT Mode) To determine the RT resistance for a given switching frequency, use Equation 4 or the curve in Figure 22. To reduce the solution size one would set the switching frequency as high as possible, but tradeoffs of the supply efficiency and minimum controllable on time should be considered. - 0.997 Rrt(k W ) = 48000 × Fsw (kHz ) -2 (4) Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 13 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com RT − Resistance − kΩ 250 200 150 100 50 0 200 400 600 800 1000 1200 1400 1600 Fsw − Oscillator Frequency − kHz Figure 22. RT Set Resistor vs Switching Frequency Synchronization (CLK mode) An internal Phase Locked Loop (PLL) has been implemented to allow synchronization between 200kHz and 1600kHz, and to easily switch from RT mode to CLK mode. To implement the synchronization feature, connect a square wave clock signal to the RT/CLK pin with a duty cycle between 20% to 80%. The clock signal amplitude must transition lower than 0.8V and higher than 2.0V. The start of the switching cycle is synchronized to the falling edge of RT/CLK pin. In applications where both RT mode and CLK mode are needed, the device can be configured as shown in Figure 23. Before the external clock is present, the device works in RT mode and the switching frequency is set by RT resistor. When the external clock is present, the CLK mode overrides the RT mode. The first time the SYNC pin is pulled above the RT/CLK high threshold (2.0V), the device switches from the RT mode to the CLK mode and the RT/CLK pin becomes high impedance as the PLL starts to lock onto the frequency of the external clock. It is not recommended to switch from the CLK mode back to the RT mode because the internal switching frequency drops to 100kHz first before returning to the switching frequency set by RT resistor. RT/CLK mode select TPS54622 TPS54623 RT/CLK Rrt Figure 23. Works with Both RT mode and CLK mode Slow Start (SS/TR) The device uses the lower voltage of the internal voltage reference or the SS/TR pin voltage as the reference voltage and regulates the output accordingly. A capacitor on the SS/TR pin to ground implements a slow start time. The device has an internal pull-up current source of 2.3μA that charges the external slow start capacitor. The calculations for the slow start time (Tss, 10% to 90%) and slow start capacitor (Css) are shown in Equation 5. The voltage reference (Vref) is 0.8 V and the slow start charge current (Iss) is 2.3μA. Tss(ms) = 14 Css(nF) ´ Vref(V) Iss(m A) (5) Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com When the input UVLO is triggered, the EN pin is pulled below 1.21V, or a thermal shutdown event occurs the device stops switching and enters low current operation. At the subsequent power up, when the shutdown condition is removed, the device does not start switching until it has discharged its SS/TR pin to ground ensuring proper soft start behavior. Power Good (PWRGD) The PWRGD pin is an open drain output. Once the VSENSE pin is between 94% and 104% of the internal voltage reference the PWRGD pin pull-down is de-asserted and the pin floats. It is recommended to use a pull-up resistor between the values of 10kΩ and 100kΩ to a voltage source that is 5.5V or less. The PWRGD is in a defined state once the VIN input voltage is greater than 1V but with reduced current sinking capability. The PWRGD achieves full current sinking capability once the VIN input voltage is above 4.5V. The PWRGD pin is pulled low when VSENSE is lower than 92% or greater than 106% of the nominal internal reference voltage. Also, the PWRGD is pulled low, if the input UVLO or thermal shutdown are asserted, the EN pin is pulled low or the SS/TR pin is below 1.4V. Bootstrap Voltage (BOOT) and Low Dropout Operation The device has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT and PH pins to provide the gate drive voltage for the high-side MOSFET. The boot capacitor is charged when the BOOT pin voltage is less than VIN and BOOT-PH voltage is below regulation. The value of this ceramic capacitor should be 0.1μF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10V or higher is recommended because of the stable characteristics over temperature and voltage. To improve drop out, the device is designed to operate at 100% duty cycle as long as the BOOT to PH pin voltage is greater than the BOOT-PH UVLO threshold which is typically 2.1V. When the voltage between BOOT and PH drops below the BOOT-PH UVLO threshold the high-side MOSFET is turned off and the low-side MOSFET is turned on allowing the boot capacitor to be recharged. In applications with split input voltage rails 100% duty cycle operation can be achieved as long as (VIN – PVIN) > 4V. Sequencing (SS/TR) Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD pins. The sequential method is illustrated in Figure 24 using two TPS54623 devices. The power good of the first device is coupled to the EN pin of the second device which enables the second power supply once the primary supply reaches regulation. TPS54623 TPS54623 PWRGD EN EN SS/TR SS/TR PWRGD Figure 24. Sequential Start Up Sequence Figure 25 shows the method implementing ratio-metric sequencing by connecting the SS/TR pins of two devices together. The regulator outputs ramp up and reach regulation at the same time. When calculating the slow start time the pull-up current source must be doubled in Equation 5. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 15 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TPS54623 EN SS/TR PWRGD TPS54623 EN SS/TR PWRGD Figure 25. Ratiometric Start Up Sequence Ratio-metric and simultaneous power supply sequencing can be implemented by connecting the resistor network of R1 and R2 shown in Figure 26 to the output of the power supply that needs to be tracked or another voltage reference source. Using Equation 6 and Equation 7, the tracking resistors can be calculated to initiate the Vout2 slightly before, after or at the same time as Vout1. Equation 8 is the voltage difference between Vout1 and Vout2. To design a ratio-metric start up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2 reaches regulation, use a negative number in Equation 6 and Equation 7 for deltaV. Equation 8 results in a positive number for applications where the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved. . The deltaV variable is zero volt for simultaneous sequencing. To minimize the effect of the inherent SS/TR to VSENSE offset (Vssoffset, 29mV) in the slow start circuit and the offset created by the pull-up current source (Iss, 2.3μA) and tracking resistors, the Vssoffset and Iss are included as variables in the equations. To ensure proper operation of the device, the calculated R1 value from Equation 6 must be greater than the value calculated in Equation 9. R1 = Vout2 + D V Vssoffset ´ Vref Iss (6) Vref ´ R1 Vout2 + DV - Vref DV = Vout1 - Vout2 R1 > 2800 ´ Vout1- 180 ´ DV R2 = 16 (7) (8) (9) Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TPS54623 EN VOUT1 SS/TR PWRGD TPS54623 EN VOUT 2 R1 SS/TR R2 PWRGD R4 R3 Figure 26. Ratiometric and Simultaneous Startup Sequence Output Overvoltage Protection (OVP) The device incorporates an output overvoltage protection (OVP) circuit to minimize output voltage overshoot. For example, when the power supply output is overloaded the error amplifier compares the actual output voltage to the internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a considerable time, the output of the error amplifier demands maximum output current. Once the condition is removed, the regulator output rises and the error amplifier output transitions to the steady state voltage. In some applications with small output capacitance, the power supply output voltage can respond faster than the error amplifier. This leads to the possibility of an output overshoot. The OVP feature minimizes the overshoot by comparing the VSENSE pin voltage to the OVP threshold. If the VSENSE pin voltage is greater than the OVP threshold the high-side MOSFET is turned off preventing current from flowing to the output and minimizing output overshoot. When the VSENSE voltage drops lower than the OVP threshold, the high-side MOSFET is allowed to turn on at the next clock cycle. Overcurrent Protection The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side MOSFET and the low-side MOSFET. High-side MOSFET overcurrent protection The device implements current mode control which uses the COMP pin voltage to control the turn off of the high-side MOSFET and the turn on of the low-side MOSFET on a cycle by cycle basis. Each cycle the switch current and the current reference generated by the COMP pin voltage are compared, when the peak switch current intersects the current reference the high-side switch is turned off. Low-side MOSFET overcurrent protection While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side sourcing current is exceeded the high-side MOSFET is not turned on and the low-side MOSFET stays on for the next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing current limit at the start of a cycle. The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded the low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario both MOSFETs are off until the start of the next cycle. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 17 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com Furthermore, if an output overload condition (as measured by the COMP pin voltage) has lasted for more than the hiccup wait time which is programmed for 512 switching cycles, the device will shut down itself and restart after the hiccup time of 16384 cycles. The hiccup mode helps to reduce the device power dissipation under severe overcurrent conditions. Thermal Shutdown The internal thermal shutdown circuitry forces the device to stop switching if the junction temperature exceeds 175°C typically. Once the junction temperature drops below 165°C typically, the internal thermal hiccup timer will start to count. The device reinitiates the power up sequence after the built-in thermal shutdown hiccup time (16384 cycles) is over. Small Signal Model for Loop Response Figure 27 shows an equivalent model for the device control loop which can be modeled in a circuit simulation program to check frequency response and transient responses. The error amplifier is a transconductance amplifier with a gm of 1300μA/V. The error amplifier can be modeled using an ideal voltage controlled current source. The resistor Roea (2.38 MΩ) and capacitor Coea (20.7 pF) model the open loop gain and frequency response of the error amplifier. The 1-mV ac voltage source between the nodes a and b effectively breaks the control loop for the frequency response measurements. Plotting a/c and c/b show the small signal responses of the power stage and frequency compensation respectively. Plotting a/b shows the small signal response of the overall loop. The dynamic loop response can be checked by replacing the RL with a current source with the appropriate load step amplitude and step rate in a time domain analysis. PH VOUT Power Stage 16 A/V a b c 0.6 V R3 Coea C2 R1 RESR VSENSE CO COMP C1 Roea gm 1300 mA/V RL R2 Figure 27. Small Signal Model for Loop Response Simple Small Signal Model for Peak Current Mode Control Figure 28 is a simple small signal model that can be used to understand how to design the frequency compensation. The device power stage can be approximated to a voltage controlled current source (duty cycle modulator) supplying current to the output capacitor and load resistor. The control to output transfer function is shown in Equation 10 and consists of a dc gain, one dominant pole and one ESR zero. The quotient of the change in switch current and the change in COMP pin voltage (node c in Figure 27) is the power stage transconductance (gmps) which is 16 A/V for the device. The DC gain of the power stage is the product of gmps and the load resistance ®L) as shown in Equation 11 with resistive loads. As the load current increases, the DC gain decreases. This variation with load may seem problematic at first glance, but fortunately the dominant pole moves with load current (see Equation 12). The combined effect is highlighted by the dashed line in Figure 29. As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover frequency the same for the varying load conditions which makes it easier to design the frequency compensation. 18 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com VOUT VC RESR RL gm ps CO Figure 28. Simplified Small Signal Model for Peak Current Mode Control VOUT Adc VC RESR fp RL gm ps CO fz Figure 29. Simplified Frequency Response for Peak Current Mode Control æ ç1+ 2p VOUT = Adc ´ è VC æ ç1+ è 2p ö s ÷ ´ ¦z ø ö s ÷ ´ ¦p ø (10) Adc = gmps ´ RL (11) 1 ¦p = C O ´ R L ´ 2p (12) ¦z = 1 CO ´ RESR ´ 2p (13) Where gmea is the GM amplifier gain ( 1300μA/V) gmps is the power stage gain (16A/V). RL is the load resistance CO is the output capacitance. RESR is the equivalent series resistance of the output capacitor. Small Signal Model for Frequency Compensation The device uses a transconductance amplifier for the error amplifier and readily supports two of the commonly used Type II compensation circuits and a Type III frequency compensation circuit, as shown in Figure 30. In Type 2A, one additional high frequency pole, C6, is added to attenuate high frequency noise. In Type III, one additional capacitor, C11, is added to provide a phase boost at the crossover frequency. See Designing Type III Compensation for Current Mode Step-Down Converters (SLVA352) for a complete explanation of Type III compensation. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 19 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com The design guidelines below are provided for advanced users who prefer to compensate using the general method. The below equations only apply to designs whose ESR zero is above the bandwidth of the control loop. This is usually true with ceramic output capacitors. See the Application Information section for a step-by-step design procedure using higher ESR output capacitors with lower ESR zero frequencies. VOUT C11 R8 Type 3 VSENSE COMP Type 2A Vref gm ea R9 Roea R4 Coea C6 Type 2B R4 C4 C4 Figure 30. Types of Frequency Compensation The general design guidelines for device loop compensation are as follows: 1. Determine the crossover frequency, fc. A good starting point is 1/10th of the switching frequency, fsw. 2. R4 can be determined by: 2p ´ ¦ c ´ VOUT ´ Co R4 = gmea ´ Vref ´ gmps (14) Where: gmea is the GM amplifier gain (1300μA/V) gmps is the power stage gain (16A/V) Vref is the reference voltage (0.6V) æ ö 1 ç ¦p = ÷ ´ ´ p C R 2 ø O L 3. Place a compensation zero at the dominant pole: è C4 can be determined by: R ´ Co C4 = L R4 (15) 4. C6 is optional. It can be used to cancel the zero from the ESR (Equivalent Series Resistance) of the output capacitor Co. ´ Co R C6 = ESR R4 (16) 5. Type III compensation can be implemented with the addition of one capacitor, C11. This allows for slightly higher loop bandwidths and higher phase margins. If used, C11 is calculated from Equation 17. 1 C11 = 2 × p × R8 × fc ) ( (17) 20 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com APPLICATION INFORMATION Design Guide – Step-By-Step Design Procedure This example details the design of a high frequency switching regulator design using ceramic output capacitors. A few parameters must be known in order to start the design process. These parameters are typically determined at the system level. For this example, we start with the following known parameters: Table 1. Parameter Value Output Voltage 3.3 V Output Current 6A Transient Response 1A load step ΔVout = 5 % Input Voltage 12 V nominal, 8 V to 17 V Output Voltage Ripple 33 mV p-p Start Input Voltage (Rising Vin) 6.528 V Stop Input Voltage (Falling Vin) 6.190 V Switching Frequency 480 kHz Typical Application Schematic The application schematic of Figure 31 was developed to meet the requirements above. This circuit is available as the TPS54623EVM-012 evaluation module. The design procedure is given in this section. For more information about Type II and Type III frequency compensation circuits, see Designing Type III Compensation for Current Mode Step-Down Converters (SLVA352) and Design Calculator (SLVC219). U1 R3 100k TPS54623RHL 2 VIN = 8 - 17 V 3 VIN 4 5 C1 10uF 6 V_SNS R1 35.7k C2 4.7uF EN R2 8.06k 7 RT/CLK PWRGD GND BOOT GND PH PVIN PH PVIN EN VIN V_SNS SS/TR PWPD 1 15 COMP C3 0.1uF 14 13 L1 3.3uH VOUT = 3.3 V, 6 A 12 11 10 C7 100uF EN R5 10.0k 9 VOUT C8 Optional V_SNS 8 R4 3.74k R6 2.21k C5 47pF C6 0.022uf C4 0.01uf Figure 31. Typical Application Circuit Operating Frequency The first step is to decide on a switching frequency for the regulator. There is a trade off between higher and lower switching frequencies. Higher switching frequencies may produce smaller a solution size using lower valued inductors and smaller output capacitors compared to a power supply that switches at a lower frequency. However, the higher switching frequency causes extra switching losses, which hurt the converter’s efficiency and thermal performance. In this design, a moderate switching frequency of 480 kHz is selected to achieve both a small solution size and a high efficiency operation. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 21 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com Output Inductor Selection To calculate the value of the output inductor, use Equation 18. KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current. The inductor ripple current is filtered by the output capacitor. Therefore, choosing high inductor ripple currents impact the selection of the output capacitor since the output capacitor must have a ripple current rating equal to or greater than the inductor ripple current. In general, the inductor ripple value is at the discretion of the designer; however, KIND is normally from 0.1 to 0.3 for the majority of applications. L1 = Vinm ax - Vout Vout × Io × Kind Vinm ax × f sw (18) For this design example, use KIND = 0.3 and the inductor value is calculated to be 3.08 µH. For this design, a nearest standard value was chosen: 3.3 µH. For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from Equation 20 and Equation 21. Vinmax - Vout Vout × Iripple = L1 Vinmax × f sw (19) ILrms = Io2 + 1 æ Vo × (Vinmax - Vo ) ö ×ç ÷ 12 çè Vinmax × L1× f sw ÷ø 2 Iripple ILpeak = Iout + 2 (20) (21) For this design, the RMS inductor current is 6.02 A and the peak inductor current is 6.84 A. The chosen inductor is a Coilcraft MSS1048 series 3.3 µH. It has a saturation current rating of 7.38 A and a RMS current rating of 7.22 A. The current flowing through the inductor is the inductor ripple current plus the output current. During power up, faults or transient load conditions, the inductor current can increase above the calculated peak inductor current level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of the device. For this reason, the most conservative approach is to specify an inductor with a saturation current rating equal to or greater than the switch current limit rather than the peak inductor current. Output Capacitor Selection There are three primary considerations for selecting the value of the output capacitor. The output capacitor determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in load current. The output capacitance needs to be selected based on the more stringent of these three criteria The desired response to a large change in the load current is the first criteria. The output capacitor needs to supply the load with current when the regulator can not. This situation would occur if there are desired hold-up times for the regulator where the output capacitor must hold the output voltage above a certain level for a specified amount of time after the input power is removed. The regulator is also temporarily not able to supply sufficient output current if there is a large, fast increase in the current needs of the load such as a transition from no load to full load. The regulator usually needs two or more clock cycles for the control loop to see the change in load current and output voltage and adjust the duty cycle to react to the change. The output capacitor must be sized to supply the extra current to the load until the control loop responds to the load change. The output capacitance must be large enough to supply the difference in current for 2 clock cycles while only allowing a tolerable amount of droop in the output voltage. Equation 22 shows the minimum output capacitance necessary to accomplish this. 2 × DIout Co > f sw × DVout (22) Where ΔIout is the change in output current, Fsw is the regulators switching frequency and ΔVout is the allowable change in the output voltage. For this example, the transient load response is specified as a 5% change in Vout for a load step of 1A. For this example, ΔIout = 3.0 A and ΔVout = 0.05 x 3.3 = 0.165 V. Using these numbers gives a minimum capacitance of 75.8 μF. This value does not take the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in this calculation. 22 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com Equation 23 calculates the minimum output capacitance needed to meet the output voltage ripple specification. Where fsw is the switching frequency, Vripple is the maximum allowable output voltage ripple, and Iripple is the inductor ripple current. In this case, the maximum output voltage ripple is 33mV. Under this requirement, Equation 23 yields 13.2µF. 1 1 Co > × 8 × f sw Voripple Iripple (23) Equation 24 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple specification. Equation 24 indicates the ESR should be less than 19.7 mΩ. In this case, the ceramic caps’ ESR is much smaller than 19.7 mΩ. Voripple Resr < Iripple (24) Additional capacitance de-ratings for aging, temperature and DC bias should be factored in which increases this minimum value. For this example, a 100 μF 6.3V X5R ceramic capacitor with 3 mΩ of ESR is be used. Capacitors generally have limits to the amount of ripple current they can handle without failing or producing excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 25 can be used to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 25 yields 485mA. Vout × (Vinmax - Vout ) Icorms = 12 × Vinmax × L1× f sw (25) Input Capacitor Selection The TPS54623 requires a high quality ceramic, type X5R or X7R, input decoupling capacitor of at least 4.7 µF of effective capacitance on the PVIN input voltage pins and 4.7 µF on the Vin input voltage pin. In some applications additional bulk capacitance may also be required for the PVIN input. The effective capacitance includes any DC bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The capacitor must also have a ripple current rating greater than the maximum input current ripple of the TPS54623. The input ripple current can be calculated using Equation 26. Icirms = Iout × Vout (Vinmin - Vout ) × Vinmin Vinmin (26) The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors because they have a high capacitance to volume ratio and are fairly stable over temperature. The output capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor decreases as the DC bias across a capacitor increases. For this example design, a ceramic capacitor with at least a 25 V voltage rating is required to support the maximum input voltage. For this example, one 10 μF and one 4.7 µF 25 V capacitors in parallel have been selected as the VIN and PVIN inputs are tied together so the TPS54623 may operate from a single supply. The input capacitance value determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 27. Using the design example values, Ioutmax = 6 A, Cin = 14.7 μF, Fsw=480 kHz, yields an input voltage ripple of 213 mV and a RMS input ripple current of 2.95 A. Ioutmax × 0.25 DVin = Cin × f sw (27) Slow Start Capacitor Selection The slow start capacitor determines the minimum amount of time it takes for the output voltage to reach its nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This is also used if the output capacitance is very large and would require large amounts of current to quickly charge the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the TPS54623 reach the current limit or excessive current draw from the input power supply may cause the input Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 23 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com voltage rail to sag. Limiting the output voltage slew rate solves both of these problems. The soft start capacitor value can be calculated using Equation 28. For the example circuit, the soft start time is not too critical since the output capacitor value is 100 μF which does not require much current to charge to 3.3 V. The example circuit has the soft start time set to an arbitrary value of 6 ms which requires a 22 nF capacitor. In TPS54623, Iss is 2.3 uA and Vref is 0.6V. Tss(ms) × Iss( m A ) C6(nF) = Vref ( V ) (28) Bootstrap Capacitor Selection A 0.1 µF ceramic capacitor must be connected between the BOOT to PH pin for proper operation. It is recommended to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have 10V or higher voltage rating. Under Voltage Lockout Set Point The Under Voltage Lock Out (UVLO) can be adjusted using the external voltage divider network of R3 and R4. R3 is connected between VIN and the EN pin of the TPS54623 and R4 is connected between EN and GND . The UVLO has two thresholds, one for power up when the input voltage is rising and one for power down or brown outs when the input voltage is falling. For the example design, the supply should turn on and start switching once the input voltage increases above 6.528V (UVLO start or enable). After the regulator starts switching, it should continue to do so until the input voltage falls below 6.190 V (UVLO stop or disable). Equation 2 and Equation 3 can be used to calculate the values for the upper and lower resistor values. For the stop voltages specified the nearest standard resistor value for R3 is 35.7 kΩ and for R4 is 8.06 kΩ. Output Voltage Feedback Resistor Selection The resistor divider network R5 and R6 is used to set the output voltage. For the example design, 10 kΩ was selected for R5. Using Equation 29, R6 is calculated as 2.22 kΩ. The nearest standard 1% resistor is 2.21 kΩ. R5 × Vref R6 = Vo - Vref (29) Minimum Output Voltage Due to the internal design of the TPS54623, there is a minimum output voltage limit for any given input voltage. The output voltage can never be lower than the internal voltage reference of 0.8 V. Above 0.8 V, the output voltage may be limited by the minimum controllable on time. The minimum output voltage in this case is given by Equation 30 Voutmin = Ontimemin × Fsmax (Vinmax + Ioutmin (RDS2min - RDS1min ))- Ioutmin (RL + RDS2min ) Where: Voutmin = minimum achievable output voltage Ontimemin = minimum controllable on-time (135 nsec maximum) Fsmax = maximum switching frequency including tolerance Vinmax = maximum input voltage Ioutmin = minimum load current RDS1min = minimum high side MOSFET on resistance (36-32 mΩ typical) RDS2min = minimum low side MOSFET on resistance (19 mΩ typical) RL = series resistance of output inductor (30) Compensation Component Selection There are several industry techniques used to compensate DC/DC regulators. The method presented here is easy to calculate and yields high phase margins. For most conditions, the regulator has a phase margin between 60 and 90 degrees. The method presented here ignores the effects of the slope compensation that is internal to the TPS54623. Since the slope compensation is ignored, the actual cross over frequency is usually lower than the cross over frequency used in the calculations. Use SwitcherPro software for a more accurate design. First, the modulator pole, fpmod, and the esr zero, fzmod must be calculated using Equation 31 and Equation 32. 24 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com For Cout, use a derated value of 75 µF. use Equation 33 and Equation 34 to estimate a starting point for the closed loop crossover frequency fco. Then the required compensation components may be derived. For this design example, fpmod is 3.86 kHz and fzmod is 707.4 kHz. Equation 33 is the geometric mean of the modulator pole and the esr zero and Equation 34 is the geometric mean of the modulator pole and one half the switching frequency. Use a frequency near the lower of these two values as the intended crossover frequency fco. In this case Equation 33 yields 52.2 kHz and Equation 34 yields 30.4 kHz. The lower value is 30.4 kHz. A slightly higher frequency of 30 kHz is chosen as the intended crossover frequency. Iout f pmod = 2 × p × Vout × Cout (31) f zm od = 1 2 × p × RESR × Cout f co = f pmod × f zmod f co = f pmod × (32) (33) f sw 2 (34) Now the compensation components can be calculated. First calculate the value for R2 which sets the gain of the compensated network at the crossover frequency. Use Equation 35 to determine the value of R2. 2p × f c × Vout × Cout R4 = gmea × Vref × gmps (35) Next calculate the value of C3. Together with R2, C3 places a compensation zero at the modulator pole frequency. Equation 36 to determine the value of C3. Vout × Cout C4 = Iout × R4 (36) Using Equation 35 and Equation 36 the standard values for R4 and C4 are 3.74 kΩ and 0.01 µF. An additional high frequency pole can be used if necessary by adding a capacitor in parallel with the series combination of R4 and C4. The pole frequency can be placed at the ESR zero frequency of the output cpacitor as given by Equation 13. Use Equation 37 to calculate the required capacitor value for C5. RESR × Cout C5 = R4 (37) Application Curves LOAD TRANSIENT STARTUP with VIN VOUT = 100 mV / div (dc coupled, -3.13 V offset) VIN = 5 V / div IOUT = 2 A / div Load step = 1.5 A to 4.5 A Slew rate = 100 mA / µsec VOUT = 1 V / div Time = 2 msec / div Time = 200 µsec / div Figure 32. Figure 33. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 25 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com STARTUP with EN STARTUP with PRE-BIAS VIN = 5 V / div VIN = 10 V / div VOUT = 2 V / div EN = 2 V / div VOUT = 2 V / div PH = 10 V / div Time = 2 msec / div Time = 2 msec / div Figure 34. Figure 35. OUTPUT VOLTAGE RIPPLE with FULL LOAD INPUT VOLTAGE RIPPLE with FULL LOAD VOUT = 20 mV / div (ac coupled) VIN = 500 mV / div PH = 5 V / div PH = 5 V / div Time = 1 µsec / div Time = 1 µsec / div Figure 36. Figure 37. CLOSED LOOP RESPONSE 60 LINE REGULATION 0.4 180 50 150 0.3 90 20 60 10 30 0 0 Gain -10 -30 -20 -60 -30 -90 -40 -120 -50 -150 -60 100 1000 10000 Frequency - Hz 100000 -180 1000000 Output Voltage Deviation - % 120 30 Phase - Degrees Gain - dB Phase 40 0.2 IOUT = 3 A 0.1 0 -0.1 -0.2 -0.3 -0.4 8 Figure 38. 26 9 10 11 13 12 Input Voltage - V 14 15 16 17 Figure 39. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com LOAD REGULATION TRACKING PERFORMANCE 0.4 10 10 Vout 0.3 1 0.1 0 -0.1 0.1 0.1 Ideal Vsense Vsense 0.01 0.01 0.001 0.001 0.0001 0.0001 Vsense Voltage - V Output Voltage - V Output Voltage Deviation - % 1 VIN = 12 V 0.2 -0.2 -0.3 -0.4 0 1 2 3 Output Current - A 5 4 6 0.00001 0.001 0.00001 0.01 0.1 1 10 Track In Voltage - V Figure 40. Figure 41. MAXIMUM AMBIENT TEMPERATURE vs LOAD CURRENT MAXIMUM AMBIENT TEMPERATURE vs IC POWER DISSIPATION 150 TA - Maximum Ambient Temperature - °C TA - Maximum Ambient Temperature - °C 150 125 Tjmax = 150 °C, no air flow 125 100 100 75 VIN = 12 V, VOUT = 3.3 V, Fsw = 480 kHz, room temp, no air flow 50 75 50 25 25 0 1 2 3 4 Load Current - A 5 6 0 0.5 1 1.5 2 2.5 3 3.5 PD - IC Power Dissipation - W Figure 42. Figure 43. JUNCTION TEMPERATURE vs IC POWER DISSIPATION EFFICIENCY vs LOAD CURRENT 100 150 TA = room temperature, no air flow 95 90 Efficiency - % TJ - Junction Temperature - °C 4 125 100 85 Vin = 8 V 80 Vin = 12 V 75 Vin = 17 V 70 65 60 75 55 50 0 50 1 2 3 4 5 6 Output Current - A 25 0 0.5 1 1.5 2 2.5 3 3.5 Pic - IC Power Dissipation - W 4 Figure 44. Figure 45. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 27 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com EFFICIENCY vs OUTPUT CURRENT TPS54623 Hiccup Mode Current Limit 100 95 Efficiency - % 90 VOUT = 2 V / div Vin = 8 V 85 80 75 Vin = 12 V PH = 10 V / div 70 Inductor Current = 5 A / div 65 Vin = 17 V 60 55 50 0.01 0.1 1 10 Time = 20 msec / div Output Current - A Figure 46. Figure 47. Fast Transient Considerations In applications where fast transient responses are very important, Type III frequency compensation can be used instead of the traditional Type II frequency compensation. For more information about Type II and Type III frequency compensation circuits, see Designing Type III Compensation for Current Mode Step-Down Converters (SLVA352) and Design Calculator (SLVC219). PCB Layout Guidelines Layout is a critical portion of good power supply design. See Figure 48 for a PCB layout example. The top layer contains the main power traces for VIN, VOUT, and VPHASE. Also on the top layer are connections for the remaining pins of the TPS54623 and a large top side area filled with ground. The top layer ground area should be connected to the internal ground layer(s) using vias at the input bypass capacitor, the output filter capacitor and directly under the TPS54623 device to provide a thermal path from the exposed thermal pad land to ground. The GND pin should be tied directly to the power pad under the IC and the power pad. For operation at full rated load, the top side ground area together with the internal ground plane, must provide adequate heat dissipating area. There are several signals paths that conduct fast changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise or degrade the power supplies performance. To help eliminate these problems, the PVIN pin should be bypassed to ground with a low ESR ceramic bypass capacitor with X5R or X7R dielectric. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the PVIN pins, and the ground connections. The VIN pin must also be bypassed to ground using a low ESR ceramic capacitor with X5R or X7R dielectric. Make sure to connect this capacitor to the quite analog ground trace rather than the power ground trace of the PVIn bypass capacitor. Since the PH connection is the switching node, the output inductor should be located close to the PH pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. The output filter capacitor ground should use the same power ground trace as the PVIN input bypass capacitor. Try to minimize this conductor length while maintaining adequate width. The small signal components should be grounded to the analog ground path as shown. The RT/CLK pin is sensitive to noise so the RT resistor should be located as close as possible to the IC and routed with minimal lengths of trace. The additional external components can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate PCB layouts, however this layout has been shown to produce good results and is meant as a guideline. Land pattern and stencil information is provided in the data sheet addendum. The dimension and outline information is for the standard RHL (S-PVQFN-N14) package. There may be slight differences between the provided data and actual lead frame used on the TPS54623RHL package. 28 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com TOPSIDE GROUND AREA FREQUENCY SET RESISTOR PVIN INPUT BYPASS CAPACITOR RT/CLK OUTPUT FILTER CAPACITOR PWRGD GND BOOT CAPACITOR BOOT EXPOSED THERMAL PAD AREA GND PH PVIN PH PVIN EN VIN SS/TR VSENSE PVIN OUTPUT INDUCTOR VOUT PH COMP VIN SLOW START CAPACITOR VIN INPUT BYPASS CAPACITOR FEEDBACK RESISTORS UVLO SET RESISTORS COMPENSATION NETWORK ANALOG GROUND TRACE 0.010 in. Diameter Thermal VIA to Ground Plane VIA to Ground Plane Etch Under Component Figure 48. PCB Layout Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 29 TPS54623 SLVSB09 – SEPTEMBER 2011 www.ti.com Figure 49. Ultra-Small PCB Layout Using TPS54623 (PMP4854-2) Estimated Circuit Area The estimated printed circuit board area for the components used in the design of Figure 31 is 0.58 in2 (374mm2). This area does not include test points or connectors. 30 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TPS54623 PACKAGE OPTION ADDENDUM www.ti.com 1-Oct-2011 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) TPS54623RHLR ACTIVE QFN RHL 14 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPS54623RHLT ACTIVE QFN RHL 14 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS54623RHLR QFN RHL 14 3000 330.0 12.4 3.75 3.75 1.15 8.0 12.0 Q2 TPS54623RHLT QFN RHL 14 250 180.0 12.4 3.75 3.75 1.15 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS54623RHLR QFN RHL 14 3000 367.0 367.0 35.0 TPS54623RHLT QFN RHL 14 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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