TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 2.95-V to 6-V Input, 6-A Output, 2-MHz, Synchronous Step-Down Switcher With Integrated FETs ( SWIFT™) Check for Samples: TPS54618 FEATURES DESCRIPTION • The TPS54618 device is a full featured 6 V, 6 A, synchronous step down current mode converter with two integrated MOSFETs. 1 2 • • • • • • • • Two 12-mΩ (typical) MOSFETs for High Efficiency at 6-A Loads 300kHz to 2MHz Switching Frequency 0.8 V ± 1% Voltage Reference Over Temperature (-40°C to 150°C) Synchronizes to External Clock Adjustable Slow Start/Sequencing UV and OV Power Good Output –40°C to 150°C Operating Junction Temperature Range Thermally Enhanced 3mm × 3mm 16-pin QFN Pin Compatible to TPS54418 APPLICATIONS • • • Low-Voltage, High-Density Power Systems Point of Load Regulation for High Performance DSPs, FPGAs, ASICs and Microprocessors Broadband, Networking and Optical Communications Infrastructure SIMPLIFIED SCHEMATIC The TPS54618 provides accurate regulation for a variety of loads with an accurate ±1% Voltage Reference (VREF) over temperature. Efficiency is maximized through the integrated 12mΩ MOSFETs and 515mA typical supply current. Using the enable pin, shutdown supply current is reduced to 5.5µA by entering a shutdown mode. Under voltage lockout is internally set at 2.6 V, but can be increased by programming the threshold with a resistor network on the enable pin. The output voltage startup ramp is controlled by the slow start pin. An open drain power good signal indicates the output is within 93% to 107% of its nominal voltage. Frequency fold back and thermal shutdown protects the device during an over-current condition. vertical spacer vertical spacer VIN The TPS54618 is supported in the SwitcherPro™ Software Tool at www.ti.com/switcherpro. CBOOT VIN BOOT CI The TPS54618 enables small designs by integrating the MOSFETs, implementing current mode control to reduce external component count, reducing inductor size by enabling up to 2 MHz switching frequency, and minimizing the IC footprint with a small 3mm x 3mm thermally enhanced QFN package. R4 TPS54618 EN LO VOUT For more SWIFTTM documentation, see the TI website at www.ti.com/swift. PH CO R5 100 3 Vin R1 PWRGD 95 GND AGND POWERPAD C ss RT R3 C1 R2 85 Efficiency - % SS/TR RT /CLK COMP 5 Vin 90 VSENSE 80 75 70 65 60 fs = 500kHz 55 50 Vout = 1.8V 0 1 2 3 4 IO - Output Current - A 5 6 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SWIFT, SwitcherPro are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) (1) TJ PACKAGE PART NUMBER –40°C to 150°C 3 × 3 mm QFN TPS54618RTE For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com ABSOLUTE MAXIMUM RATINGS (1) UNIT VIN –0.3 to 7 EN –0.3 to 3.3 BOOT Input voltage PH + 7 VSENSE –0.3 to 3 COMP –0.3 to 3 PWRGD –0.3 to 7 SS/TR –0.3 to 3 RT/CLK –0.3 to 3.3 BOOT-PH Output voltage Source current Sink current 7 PH –0.6 to 7 PH 10 ns Transient –2 to 10 100 RT/CLK 100 COMP 100 µA PWRGD 10 mA SS/TR 100 µA 2 kV Electrostatic discharge (Charged Devic Model) QSS 009-147 (JESD22-C101B.01) (1) (2) 2 V EN Electrostatic discharge (Human Body Model) QSS 009-105 (JESD22-A114A) (2) Temperature V µA 500 V Tj –40 to 150 °C Tstg –65 to 150 °C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ELECTRICAL SPECIFICATIONS is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. The machine model is a 200-pF capacitor discharged directly into each pin. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 THERMAL INFORMATION TPS54618 THERMAL METRIC (1) (2) (3) (RTE) UNITS (QFN-16) PINS Junction-to-ambient thermal resistance qJA 56.4 (4) qJA Junction-to-ambient thermal resistance yJT Junction-to-top characterization parameter 0.9 yJB Junction-to-board characterization parameter 22.2 qJC(top) Junction-to-case(top) thermal resistance 28.7 qJC(bottom) Junction-to-case(bottom) thermal resistance 12.5 qJB Junction-to-board thermal resistance 22.7 (1) (2) (3) (4) 35.5 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Maximum power dissipation may be limited by overcurrent protection Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below 150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more information. Test boards conditions: (a) 2 inches x 2 inches, 4 layers, thickness: 0.062 inch (b) 2 oz. copper traces located on the top of the PCB (c) 2 oz. copper ground planes on the 2 internal layers and bottom layer (d) 4 thermal vias (10mil) located under the device package ELECTRICAL CHARACTERISTICS TJ = –40°C to 150°C, VIN = 2.95 to 6 V (unless otherwise noted) DESCRIPTION CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN PIN) Operating input voltage Internal under voltage lockout threshold 2.95 6.0 VIN UVLO STOP 2.28 2.5 VIN UVLO START 2.45 2.6 V V Shutdown supply current EN = 0 V, 25°C, 2.95 V ≤ VIN ≤ 6 V 5.5 15 mA Quiescent Current - Iq VSENSE = 0.9 V, VIN = 5 V, 25°C, RT = 400 kΩ 515 650 mA Rising 1.25 Falling 1.18 Enable threshold + 50 mV –3.5 Enable threshold – 50 mV –1.9 ENABLE AND UVLO (EN PIN) Enable threshold Input current V mA VOLTAGE REFERENCE (VSENSE PIN) Voltage Reference 2.95 V ≤ VIN ≤ 6 V, –40°C <TJ < 150°C 0.791 0.799 0.807 BOOT-PH = 5 V 12 25 BOOT-PH = 2.95 V 16 33 VIN = 5 V 13 25 VIN = 2.95 V 17 33 V MOSFET High side switch resistance Low side switch resistance mΩ mΩ ERROR AMPLIFIER Input current 2 nA Error amplifier transconductance (gm) –2 mA < I(COMP) < 2 mA, V(COMP) = 1 V 245 mmhos Error amplifier transconductance (gm) during slow start –2 mA < I(COMP) < 2 mA, V(COMP) = 1 V, Vsense = 0.4 V 79 mmhos Error amplifier source/sink V(COMP) = 1 V, 100 mV overdrive ±20 mA 25 A/V COMP to Iswitch gm Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 3 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) TJ = –40°C to 150°C, VIN = 2.95 to 6 V (unless otherwise noted) DESCRIPTION CONDITIONS MIN TYP MAX VIN = 6 V, 25°C < TJ < 150°C 7.46 10.6 15.3 VIN = 2.95 V, 25°C < TJ < 150°C 7.68 10.2 13.5 UNIT CURRENT LIMIT Current limit threshold A THERMAL SHUTDOWN Thermal Shutdown Hysteresis 168 °C 20 °C TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN) Switching frequency range using RT mode Switching frequency 200 Rt = 400 kΩ Switching frequency range using CLK mode 500 300 Minimum CLK pulse width RT/CLK voltage 400 2000 kHz 600 kHz 2000 kHz 75 R(RT/CLK) = 400 kΩ ns 0.5 RT/CLK high threshold 1.6 RT/CLK low threshold 0.4 V 2.2 V 0.6 V RT/CLK falling edge to PH rising edge delay Measure at 500 kHz with RT resistor in series 90 ns PLL lock in time Measure at 500 kHz 42 ms Measured at 50% points on PH, IOUT = 3 A 75 Measured at 50% points on PH, VIN = 6 V, IOUT = 0 A 120 PH (PH PIN) Minimum On time Minimum Off time Rise Time Fall Time Prior to skipping off pulses, BOOT-PH = 2.95 V, IOUT = 3 A VIN = 6 V, 6 A ns 60 ns 2.25 V/ns 2 BOOT (BOOT PIN) BOOT Charge Resistance VIN = 5 V 16 Ω BOOT-PH UVLO VIN = 2.95 V 2.1 V SLOW START AND TRACKING (SS/TR PIN) Charge Current V(SS/TR) = 0.4 V 2 mA SS/TR to VSENSE matching V(SS/TR) = 0.4 V 54 mV SS/TR to reference crossover 98% normal 1.1 V SS/TR discharge voltage (Overload) VSENSE = 0 V 61 mV SS/TR discharge current (Overload) VSENSE = 0 V, V(SS/TR) = 0.4 V 350 µA SS discharge current (UVLO, EN, Thermal fault) VIN = 5 V, V(SS) = 0.5 V 1.9 mA VSENSE falling (Fault) 91 POWER GOOD (PWRGD PIN) VSENSE threshold VSENSE rising (Good) 93 VSENSE rising (Fault) 109 VSENSE falling (Good) 107 % Vre Hysteresis VSENSE falling 2 % Vref Output high leakage VSENSE = VREF, V(PWRGD) = 5.5 V 7 nA On resistance Output low I(PWRGD) = 3 mA Minimum VIN for valid output V(PWRGD) < 0.5 V at 100 mA 4 Submit Documentation Feedback 56 100 Ω 0.2 0.3 V 0.65 1.5 V Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 DEVICE INFORMATION PIN CONFIGURATION VIN 1 VIN 2 GND GND VIN EN PWRGD BOOT QFN16 RTE PACKAGE (TOP VIEW) 16 15 14 13 12 PH 11 PH 3 10 PH 4 9 PowerPAD (17) 8 RT/CLK 7 COMP 6 VSENSE AGND 5 SS/TR PIN FUNCTIONS PIN NAME DESCRIPTION NO. AGND 5 Analog Ground should be electrically connected to GND close to the device. BOOT 13 A bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor is below the minimum required by the BOOT UVLO, the output is forced to switch off until the capacitor is refreshed. COMP 7 Error amplifier output, and input to the output switch current comparator. Connect frequency compensation components to this pin. EN 15 Enable pin, internal pull-up current source. Pull below 1.2 V to disable. Float to enable. Can be used to set the on/off threshold (adjust UVLO) with two additional resistors. 3, 4 Power Ground. This pin should be electrically connected directly to the power pad under the IC. GND PH 10, 11, 12 The source of the internal high side power MOSFET, and drain of the internal low side (synchronous) rectifier MOSFET. PowerPAD 17 GND pin should be connected to the exposed power pad for proper operation. This power pad should be connected to any internal PCB ground plane using multiple vias for good thermal performance. PWRGD 14 An open drain output; asserts low if output voltage is low due to thermal shutdown, overcurrent, over/under-voltage or EN shut down. RT/CLK 8 Resistor Timing or External Clock input pin. SS/TR 9 Slow start and tracking. An external capacitor connected to this pin sets the output voltage rise time. This pin can also be used for tracking. VIN VSENSE 1, 2, 16 6 Input supply voltage, 2.95 V to 6 V. Inverting node of the transconductance (gm) error amplifier. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 5 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com FUNCTIONAL BLOCK DIAGRAM PWRGD EN VIN i1 Shutdown 93% ihys Thermal Shutdown Enable Comparator Logic UVLO Shutdown Shutdown Logic 109% Enable Threshold Boot Charge Voltage Reference Boot UVLO Minimum COMP Clamp ERROR AMPLIFIER PWM Comparator VSENSE SS/TR Current Sense BOOT Logic and PWM Latch Shutdown Logic S COMP Slope Compensation PH Frequency Shift Overload Recovery Maximum Clamp Oscillator with PLL GND TPS54618RTE Block Diagram AGND 6 POWERPAD RT/CLK Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 TYPICAL CHARACTERISTICS CURVES FREQUENCY vs TEMPERATURE 0.025 525 520 0.023 High Side Rdson Vin = 3.3 V 0.021 Low Side Rdson Vin = 3.3 V 0.019 0.017 0.015 0.013 High Side Rdson Vin = 5 V 0.011 Low Side Rdson Vin = 5 V 0.009 RT = 400 kW, Vin = 5 V 515 fs - Switching Frequency - kHz RDSON - Static Drain-Source On-State Resistance - W HIGH SIDE AND LOW SIDE RDS(ON) vs TEMPERATURE 510 505 500 495 490 485 480 0.007 0.005 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 475 -50 150 -25 0 25 50 75 100 TJ - Junction Temperature - °C Figure 1. HIGH SIDE CURRENT LIMIT vs TEMPERATURE VOLTAGE REFERENCE vs TEMPERATURE 0.807 Vin = 3.3 V Vin = 6 V 11.5 0.805 11 0.803 Vref - Voltage Reference - V High Side Switching Current - A 150 Figure 2. 12 10.5 Vin = 2.95 V 10 9.5 9 8.5 0.801 0.799 0.797 0.795 0.793 8 25 50 75 100 TJ - Junction Temperature - °C 125 150 0.791 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C Figure 3. 125 150 Figure 4. SWITCHING FREQUENCY vs RT RESISTANCE LOW FREQUENCY RANGE SWITCHING FREQUENCY vs VSENSE 100 2000 1800 Vsense Falling Nominal Switching Frequency - % fs - Switching Frequency - kHz 125 1600 1400 1200 1000 800 75 Vsense Rising 50 25 400 200 80 180 280 380 480 580 RT - Resistance - kW 680 780 880 980 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Vsense - V Figure 5. Figure 6. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 7 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com TYPICAL CHARACTERISTICS CURVES (continued) TRANSCONDUCTANCE (SLOW START) vs JUNCTION TEMPERATURE TRANSCONDUCTANCE vs TEMPERATURE 105 310 Vin = 3.3 V 100 Vin = 3.3 V EA - Transconductance - mA/V EA - Transconductance - mA/V 290 270 250 230 210 95 90 85 80 75 70 65 190 60 170 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 55 -50 150 -25 0 25 50 75 100 TJ - Junction Temperature - °C Figure 7. 125 150 Figure 8. EN PIN VOLTAGE vs TEMPERATURE EN PIN CURRENT vs TEMPERATURE 1.3 -3 1.29 -3.1 Vin = 5 V, Ven = Threshold +50 mV 1.28 Vin = 3.3 V, rising 1.27 -3.2 EN - Pin Current - mA EN - Threshold - V 1.26 1.25 1.24 1.23 1.22 1.21 1.2 Vin = 3.3 V, falling 1.19 -3.3 -3.4 -3.5 -3.6 -3.7 1.18 -3.8 1.17 -3.9 1.16 1.15 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 -4 -50 150 -25 0 Figure 9. 125 150 Figure 10. EN PIN CURRENT vs TEMPERATURE CHARGE CURRENT vs TEMPERATURE -1 -1.2 25 50 75 100 TJ - Junction Temperature - °C -1.4 Vin = 5 V Vin = 5 V, Ven = Threshold -50 mV -1.6 Iss/tr - Charge Current - mA EN - Pin Current - mA -1.4 -1.6 -1.8 -2 -2.2 -2.4 -1.8 -2 -2.2 -2.4 -2.6 -2.6 -2.8 -2.8 -3 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 150 -3 -50 -30 Figure 11. 8 -10 10 30 50 70 90 TJ - Junction Temperature - °C 110 130 150 Figure 12. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 TYPICAL CHARACTERISTICS CURVES (continued) INPUT VOLTAGE vs TEMPERATURE SHUTDOWN SUPPLY CURRENT vs TEMPERATURE 2.8 8 2.7 7 Shutdown Supply Current - mA Vin = 3.3 V VI - Input Voltage - V 2.6 UVLO Stop Switching 2.5 2.4 2.3 UVLO Start Switching 2.2 6 5 4 3 2 1 2.1 2 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 0 -50 150 -25 0 Figure 13. 125 150 Figure 14. SHUTDOWN SUPPLY CURRENT vs INPUT VOLTAGE VIN SUPPLY CURRENT vs JUNCTION TEMPERATURE 800 8 TJ = 25°C Vin = 3.3 V 7 700 6 Ivin - Supply Current - mA Shutdown Supply Current - mA 25 50 75 100 TJ - Junction Temperature - °C 5 4 3 2 600 500 400 300 1 0 3 3.5 4 4.5 5 VI - Input Voltage - V 5.5 200 -50 6 -25 0 Figure 15. 125 150 Figure 16. VIN SUPPLY CURRENT vs INPUT VOLTAGE PWRGD THRESHOLD vs TEMPERATURE 800 110 TJ = 25°C 108 700 106 PWRGD Threshold - % Vref Ivin - Supply Current - mA 25 50 75 100 TJ - Junction Temperature - °C 600 500 400 Vsense Falling 104 Vsense Rising, Vin = 5 V 102 100 98 96 Vsense Rising Vsense Falling 94 92 300 90 200 3 3.5 4 4.5 5 VI - Input Voltage - V 5.5 6 88 -50 -25 Figure 17. 0 25 50 75 100 TJ - Junction Temperature - °C 125 150 Figure 18. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 9 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com TYPICAL CHARACTERISTICS CURVES (continued) SS/TR to VSENSE OFFSET vs TEMPERATURE 100 100 Vin = 3.3 V 90 Vin = 5 V, SS = 0.4 V 90 80 80 SSTR - Vsense Offset - mV RDSON - Static Drain-Source On-State Resistance - W PWRGD ON-RESISTANCE vs TEMPERATURE 70 60 50 40 30 70 60 50 40 30 20 20 10 10 0 -50 -25 0 25 50 75 100 TJ - Junction Temperature - °C 125 0 -50 150 -25 0 25 50 75 100 TJ - Junction Temperature - °C Figure 19. EFFICIENCY vs LOAD CURRENT EFFICIENCY vs LOAD CURRENT 100 95 95 90 90 Vout = 3.3 V Vout = 1.8 V Vout = 1.8 V 85 Vout = 1.05 V Efficiency - % Efficiency - % 85 80 75 70 65 Vout = 1.05 V 80 75 70 65 Vin = 5 V, fs = 1 MHz, TJ = 25°C 60 55 0 1 Vin = 3.5 V, fs = 1 MHz, TJ = 25°C 60 55 2 3 4 5 50 6 1 0 4 Figure 21. Figure 22. 5 6 EFFICIENCY vs LOAD CURRENT 100 95 95 90 90 Vout = 3.3 V Vout = 1.8 V Vout = 1.8 V 85 Efficiency - % 85 Efficiency - % 3 Output Current - A EFFICIENCY vs LOAD CURRENT Vout = 1.05 V 80 75 70 65 Vout = 1.05 V 80 75 70 65 Vin = 5 V, fs = 500 kHz, TJ = 25°C 60 55 10 2 Output Current - A 100 50 150 Figure 20. 100 50 125 0 1 Vin = 3.5 V, fs = 500 kHz, TJ = 25°C 60 55 2 3 4 5 6 50 0 1 2 3 Output Current - A Output Current - A Figure 23. Figure 24. Submit Documentation Feedback 4 5 6 Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 OVERVIEW The TPS54618 is a 6-V, 6-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To improve performance during line and load transients the device implements a constant frequency, peak current mode control which reduces output capacitance and simplifies external frequency compensation design. The wide switching frequency of 200 kHz to 2000 kHz allows for efficiency and size optimization when selecting the output filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin. The device has an internal phase lock loop (PLL) on the RT/CLK pin that is used to synchronize the power switch turn on to a falling edge of an external system clock. The TPS54618 has a typical default start up voltage of 2.45 V. The EN pin has an internal pull-up current source that can be used to adjust the input voltage under voltage lockout (UVLO) with two external resistors. In addition, the pull up current provides a default condition when the EN pin is floating for the device to operate. The total operating current for the TPS54618 is typically 515 mA when not switching and under no load. When the device is disabled, the supply current is less than 5.5 mA. The integrated 12 mΩ MOSFETs allow for high efficiency power supply designs with continuous output currents up to 6 amperes. The TPS54618 reduces the external component count by integrating the boot recharge diode. The bias voltage for the integrated high side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor voltage is monitored by an UVLO circuit and turns off the high side MOSFET when the voltage falls below a preset threshold. This BOOT circuit allows the TPS54618 to operate approaching 100%. The output voltage can be stepped down to as low as the 0.799 V reference. The TPS54618 has a power good comparator (PWRGD) with 2% hysteresis. The TPS54618 minimizes excessive output overvoltage transients by taking advantage of the overvoltage power good comparator. When the regulated output voltage is greater than 109% of the nominal voltage, the overvoltage comparator is activated, and the high side MOSFET is turned off and masked from turning on until the output voltage is lower than 107%. The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing during power up. A small value capacitor should be coupled to the pin for slow start. The SS/TR pin is discharged before the output power up to ensure a repeatable restart after an overtemperature fault, UVLO fault or disabled condition. The use of a frequency fold-back circuit reduces the switching frequency during startup and over current fault conditions to help limit the inductor current. DETAILED DESCRIPTION FIXED FREQUENCY PWM CONTROL The TPS54618 uses an adjustable fixed frequency, peak current mode control. The output voltage is compared through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives the COMP pin. An internal oscillator initiates the turn on of the high side power switch. The error amplifier output is compared to the high side power switch current. When the power switch current reaches the COMP voltage level the high side power switch is turned off and the low side power switch is turned on. The COMP pin voltage increases and decreases as the output current increases and decreases. The device implements a current limit by clamping the COMP pin voltage to a maximum level and also implements a minimum clamp for improved transient response performance. SLOPE COMPENSATION AND OUTPUT CURRENT The TPS54618 adds a compensating ramp to the switch current signal. This slope compensation prevents sub-harmonic oscillations as duty cycle increases. The available peak inductor current remains constant over the full duty cycle range. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 11 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com BOOTSTRAP VOLTAGE (BOOT) AND LOW DROPOUT OPERATION The TPS54618 has an integrated boot regulator and requires a small ceramic capacitor between the BOOT and PH pin to provide the gate drive voltage for the high side MOSFET. The value of the ceramic capacitor should be 0.1 mF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher is recommended because of the stable characteristics over temperature and voltage. To improve drop out, the TPS54618 is designed to operate at 100% duty cycle as long as the BOOT to PH pin voltage is greater than 2.2 V. The high side MOSFET is turned off using an UVLO circuit, allowing for the low side MOSFET to conduct when the voltage from BOOT to PH drops below 2.2 V. Since the supply current sourced from the BOOT pin is very low, the high side MOSFET can remain on for more switching cycles than are required to refresh the capacitor, thus the effective duty cycle of the switching regulator is very high. ERROR AMPLIFIER The TPS54618 has a transconductance amplifier. The error amplifier compares the VSENSE voltage to the lower of the SS/TR pin voltage or the internal 0.799 V voltage reference. The transconductance of the error amplifier is 245mA/V during normal operation. When the voltage of VSENSE pin is below 0.799 V and the device is regulating using the SS/TR voltage, the gm is typically greater than 79 mA/V, but less than 245 mA/V. The frequency compensation components are placed between the COMP pin and ground. VOLTAGE REFERENCE The voltage reference system produces a precise ±1% voltage reference over temperature by scaling the output of a temperature-stable bandgap circuit. The bandgap and scaling circuits produce 0.799 V at the non-inverting input of the error amplifier. ADJUSTING THE OUTPUT VOLTAGE The output voltage is set with a resistor divider from the output node to the VSENSE pin. It is recommended to use divider resistors with 1% tolerance or better. Start with a 100 kΩ for the R1 resistor and use the Equation 1 to calculate R2. To improve efficiency at very light loads consider using larger value resistors. If the values are too high the regulator is more susceptible to noise and voltage errors from the VSENSE input current are noticeable. vertical spacer vertical spacer æ ö 0.799 V R2 = R1 ´ ç ÷ è VO - 0.799 V ø (1) TPS54618 VO R1 VSENSE – R2 0.799 V + Figure 25. Voltage Divider Circuit ENABLE AND ADJUSTING UNDER-VOLTAGE LOCKOUT The TPS54618 is disabled when the VIN pin voltage falls below 2.28 V. If an application requires a higher under-voltage lockout (UVLO), use the EN pin as shown in Figure 26 to adjust the input voltage UVLO by using two external resistors. It is recommended to use the EN resistors to set the UVLO falling threshold (VSTOP) above 12 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 2.6V. The rising threshold (VSTART) should be set to provide enough hysteresis to allow for any input supply variations. The EN pin has an internal pull-up current source that provides the default condition of the TPS54618 operating when the EN pin floats. Once the EN pin voltage exceeds 1.25 V, an additional 1.6 mA of hysteresis is added. When the EN pin is pulled below 1.18 V, the 1.6 mA is removed. This additional current facilitates input voltage hysteresis. TPS54618 i hys VIN 1.6 mA i1 R1 1.9 mA R2 EN + – Figure 26. Adjustable Under Voltage Lock Out æV ö VSTART ç ENFALLING ÷ - VSTOP è VENRISING ø R1 = æ V ö Ip ç1 - ENFALLING ÷ + Ih VENRISING ø è (2) vertical spacer R2 = VSTOP R1´ VENFALLING - VENFALLING + R1(Ip + Ih ) (3) Where R1 and R2 are in ohms, Ih = 1.6uA, Ip = 1.9uA, VENRISING = 1.25V, VENFALLING = 1.18V SLOW START / TRACKING PIN The TPS54618 regulates to the lower of the SS/TR pin and the internal reference voltage. A capacitor on the SS/TR pin to ground implements a slow start time. The TPS54618 has an internal pull-up current source of 2 mA which charges the external slow start capacitor. Equation 4 calculates the required slow start capacitor value where Tss is the desired slow start time in ms, Iss is the internal slow start charging current of 2 mA, and Vref is the internal voltage reference of 0.799 V. vertical spacer Tss(mS) ´ Iss(mA) Css(nF) = Vref(V) (4) If during normal operation, the VIN goes below the UVLO, EN pin pulled below 1.2 V, or a thermal shutdown event occurs, the TPS54618 stops switching. When the VIN goes above UVLO, EN is released or pulled high, or a thermal shutdown is exited, then SS/TR is discharged to below 40 mV before reinitiating a powering up sequence. The VSENSE voltage will follow the SS/TR pin voltage with a 54mV offset up to 85% of the internal voltage reference. When the SS/TR voltage is greater than 85% on the internal reference voltage the offset increases as the effective system reference transitions from the SS/TR voltage to the internal voltage reference. SEQUENCING Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD pins. The sequential method can be implemented using an open drain or collector output of a power on reset pin of another device. Figure 27 shows the sequential method. The power good is coupled to the EN pin on the TPS54618 which enables the second power supply once the primary supply reaches regulation. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 13 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com Ratio-metric start up can be accomplished by connecting the SS/TR pins together. The regulator outputs ramp up and reach regulation at the same time. When calculating the slow start time the pull up current source must be doubled in Equation 4. The ratio metric method is illustrated in Figure 29. TPS54618 PWRGD1 EN1 EN2 EN1 SS1 SS2 EN2 PWRGD2 VO1 VO2 Figure 27. Sequential Start-Up Sequence Figure 28. Sequential Startup using EN and PWRGD TPS54618 EN1 SS/TR1 EN PWRGD1 SS TPS54618 EN2 VO1 VO2 SS/TR2 PWRGD2 Figure 29. Schematic for Ratio-metric Start-Up Sequence vertical spacer Figure 30. Ratio-metric Startup Ratio-metric and simultaneous power supply sequencing can be implemented by connecting the resistor network of R1 and R2 shown in Figure 31 to the output of the power supply that needs to be tracked or another voltage reference source. Using Equation 5 and Equation 6, the tracking resistors can be calculated to initiate the Vout2 slightly before, after or at the same time as Vout1. Equation 7 is the voltage difference between Vout1 and Vout2. The ΔV variable is zero volts for simultaneous sequencing. To minimize the effect of the inherent SS/TR to VSENSE offset (Vssoffset) in the slow start circuit and the offset created by the pullup current source (Iss) and tracking resistors, the Vssoffset and Iss are included as variables in the equations. To design a ratio-metric start up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2 reaches regulation, use a negative number in Equation 5 through Equation 7 for ΔV. Equation 7 will result in a positive number for applications which the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved. Since the SS/TR pin must be pulled below 40mV before starting after an EN, UVLO or thermal shutdown fault, careful selection of the 14 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 tracking resistors is needed to ensure the device will restart after a fault. Make sure the calculated R1 value from Equation 5 is greater than the value calculated in Equation 8 to ensure the device can recover from a fault. As the SS/TR voltage becomes more than 85% of the nominal reference voltage the Vssoffset becomes larger as the slow start circuits gradually handoff the regulation reference to the internal voltage reference. The SS/TR pin voltage needs to be greater than 1.1 V for a complete handoff to the internal voltage reference as shown in Figure 30. vertical spacer R1 = Vout2 + D V Vssoffset ´ Vref Iss (5) vertical spacer R2 = Vref ´ R1 Vout2 + DV - Vref (6) vertical spacer DV = Vout1 - Vout2 (7) vertical spacer R1 > 2930 ´ Vout1- 145 ´ DV (8) vertical spacer TPS54618 EN1 VOUT1 EN1 SS/TR1 PWRGD1 SS2 Vout1 TPS54618 EN2 VOUT 2 Vout2 R1 SS/TR2 R2 PWRGD2 Figure 31. Ratio-metric and Simultaneous Startup Sequence Figure 32. Ratio-metric Start-Up using Coupled SS/TR Pins CONSTANT SWITCHING FREQUENCY and TIMING RESISTOR (RT/CLK Pin) The switching frequency of the TPS54618 is adjustable over a wide range from 300 kHz to 2000 kHz by placing a maximum of 700 kΩ and minimum of 85 kΩ, respectively, on the RT/CLK pin. An internal amplifier holds this pin at a fixed voltage when using an external resistor to ground to set the switching frequency. The RT/CLK is typically 0.5 V. To determine the timing resistance for a given switching frequency, use the curve in Figure 5 or Equation 9. 247530 RT (kW) = Fsw(kHz)1.0533 (9) vertical spacer Fsw(kHz) = 131904 RT(kW)0.9492 (10) To reduce the solution size one would typically set the switching frequency as high as possible, but tradeoffs of the efficiency, maximum input voltage and minimum controllable on time should be considered. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 15 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com The minimum controllable on time is typically 75 ns at full current load and 120 ns at no load, and limits the maximum operating input voltage or output voltage. OVERCURRENT PROTECTION The TPS54618 implements a cycle by cycle current limit. During each switching cycle the high side switch current is compared to the voltage on the COMP pin. When the instantaneous switch current intersects the COMP voltage, the high side switch is turned off. During overcurrent conditions that pull the output voltage low, the error amplifier responds by driving the COMP pin high, increasing the switch current. The error amplifier output is clamped internally. This clamp functions as a switch current limit. FREQUENCY SHIFT To operate at high switching frequencies and provide protection during overcurrent conditions, the TPS54618 implements a frequency shift. If frequency shift was not implemented, during an overcurrent condition the low side MOSFET may not be turned off long enough to reduce the current in the inductor, causing a current runaway. With frequency shift, during an overcurrent condition the switching frequency is reduced from 100%, then 50%, then 25%, as the voltage decreases from 0.799 to 0 volts on VSENSE pin to allow the low side MOSFET to be off long enough to decrease the current in the inductor. During start-up, the switching frequency increases as the voltage on VSENSE increases from 0 to 0.799 volts. See Figure 6 for details. REVERSE OVERCURRENT PROTECTION The TPS54618 implements low side current protection by detecting the voltage across the low side MOSFET. When the converter sinks current through its low side FET, the control circuit turns off the low side MOSFET if the reverse current is typically more than 4.5 A. By implementing this additional protection scheme, the converter is able to protect itself from excessive current during power cycling and start-up into pre-biased outputs. SYNCHRONIZE USING THE RT/CLK PIN The RT/CLK pin is used to synchronize the converter to an external system clock. See Figure 33. To implement the synchronization feature in a system, connect a square wave to the RT/CLK pin with an on time of at least 75ns. If the pin is pulled above the PLL upper threshold, a mode change occurs and the pin becomes a synchronization input. The internal amplifier is disabled and the pin is a high impedance clock input to the internal PLL. If clocking edges stop, the internal amplifier is re-enabled and the mode returns to the frequency set by the resistor. The square wave amplitude at this pin must transition lower than 0.6 V and higher than 1.6 V typically. The synchronization frequency range is 300 kHz to 2000 kHz. The rising edge of the PH is synchronized to the falling edge of RT/CLK pin. TPS54618 SYNC Clock PLL RT/CLK Clock Source RT PH Figure 33. Synchronizing to a System Clock 16 Figure 34. Plot of Synchronizing to System Clock Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 POWER GOOD (PWRGD PIN) The PWRGD pin output is an open drain MOSFET. The output is pulled low when the VSENSE voltage enters the fault condition by falling below 91% or rising above 109% of the nominal internal reference voltage. There is a 2% hysteresis on the threshold voltage, so when the VSENSE voltage rises to the good condition above 93% or falls below 107% of the internal voltage reference the PWRGD output MOSFET is turned off. It is recommended to use a pull-up resistor between the values of 1kΩ and 100kΩ to a voltage source that is 6 V or less. The PWRGD is in a valid state once the VIN input voltage is greater than 1.5 V. OVERVOLTAGE TRANSIENT PROTECTION The TPS54618 incorporates an overvoltage transient protection (OVTP) circuit to minimize voltage overshoot when recovering from output fault conditions or strong unload transients. The OVTP feature minimizes the output overshoot by implementing a circuit to compare the VSENSE pin voltage to the OVTP threshold which is 109% of the internal voltage reference. If the VSENSE pin voltage is greater than the OVTP threshold, the high side MOSFET is disabled preventing current from flowing to the output and minimizing output overshoot. When the VSENSE voltage drops lower than the OVTP threshold the high side MOSFET is allowed to turn on the next clock cycle. THERMAL SHUTDOWN The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 168°C. The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal trip threshold. Once the die temperature decreases below 150°C, the device reinitiates the power up sequence by discharging the SS pin to below 40 mV. The thermal shutdown hysteresis is 20°C. SMALL SIGNAL MODEL FOR LOOP RESPONSE Figure 35 shows an equivalent model for the TPS54618 control loop which can be modeled in a circuit simulation program to check frequency response and dynamic load response. The error amplifier is a transconductance amplifier with a gm of 245 mA/V. The error amplifier can be modeled using an ideal voltage controlled current source. The resistor R0 and capacitor Co model the open loop gain and frequency response of the amplifier. The 1-mV AC voltage source between the nodes a and b effectively breaks the control loop for the frequency response measurements. Plotting a/c shows the small signal response of the frequency compensation. Plotting a/b shows the small signal response of the overall loop. The dynamic loop response can be checked by replacing the RL with a current source with the appropriate load step amplitude and step rate in a time domain analysis. PH VO Power Stage 25 A/V a b R1 c RL COMP R3 C2 RESR C1 C0 R0 0.799 V VSENSE gm 245 µA/V COUT R2 Figure 35. Small Signal Model for Loop Response Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 17 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com SIMPLE SMALL SIGNAL MODEL FOR PEAK CURRENT MODE CONTROL Figure 35 is a simple small signal model that can be used to understand how to design the frequency compensation. The TPS54618 power stage can be approximated to a voltage controlled current source (duty cycle modulator) supplying current to the output capacitor and load resistor. The control to output transfer function is shown in Equation 11 and consists of a dc gain, one dominant pole and one ESR zero. The quotient of the change in switch current and the change in COMP pin voltage (node c in Figure 35) is the power stage transconductance. The gm for the TPS54618 is 25 A/V. The low frequency gain of the power stage frequency response is the product of the transconductance and the load resistance as shown in Equation 12. As the load current increases and decreases, the low frequency gain decreases and increases, respectively. This variation with load may seem problematic at first glance, but the dominant pole moves with load current [see Equation 13]. The combined effect is highlighted by the dashed line in the right half of Figure 36. As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover frequency the same for the varying load conditions which makes it easier to design the frequency compensation. vertical spacer vertical spacer VO Adc VC RESR fp RL gmps COUT fz Figure 36. Simple Small Signal Model and Frequency Response for Peak Current Mode Control æ ç 1+ vo è 2p = Adc ´ vc æ ç 1+ è 2p ö s ÷ × ¦z ø ö s ÷ × ¦p ø (11) Adc = gmps ´ RL ¦p = C OUT (12) 1 ´ RL ´ 2p (13) 1 ´ RESR ´ 2p (14) vertical spacer ¦z = COUT SMALL SIGNAL MODEL FOR FREQUENCY COMPENSATION The TPS54618 uses a transconductance amplifier for the error amplifier and readily supports two of the commonly used frequency compensation circuits. The compensation circuits are shown in Figure 37. The Type 2 circuits are most likely implemented in high bandwidth power supply designs using low ESR output capacitors. In Type 2A, one additional high frequency pole is added to attenuate high frequency noise. 18 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 VO R1 VSENSE COMP gmea R2 Vref RO CO 5pF Type 2A R3 C2 Type 2B R3 C1 C1 Figure 37. Types of Frequency Compensation The design guidelines for TPS54618 loop compensation are as follows: 1. The modulator pole, fpmod, and the esr zero, fz1 must be calculated using Equation 15 and Equation 16. Derating the output capacitor (COUT) may be needed if the output voltage is a high percentage of the capacitor rating. Use the capacitor manufacturer information to derate the capacitor value. Use Equation 17 and Equation 18 to estimate a starting point for the crossover frequency, fc. Equation 17 is the geometric mean of the modulator pole and the esr zero and Equation 18 is the mean of modulator pole and the switching frequency. Use the lower value of Equation 17 or Equation 18 as the maximum crossover frequency. ¦ p m od = Iout m ax 2 p ´ Vout ´ Cout (15) vertical spacer ¦ z m od = 1 2 p ´ Resr ´ Cout (16) vertical spacer ¦C = ¦p mod ´ ¦ z mod (17) vertical spacer ¦C = ¦p mod ´ ¦ sw 2 (18) vertical spacer 2. R3 can be determined by 2p × ¦ c ´ Vo ´ COUT R3 = gmea ´ Vref ´ gmps (19) vertical spacer Where is the gmea amplifier gain (245 mA/V), gmps is the power stage gain (25 A/V). ¦p = 3. Place a compensation zero at the dominant pole R ´ COUT C1 = L R3 1 C OUT ´ R L ´ 2 p . C1 can be determined by (20) vertical spacer 4. C2 is optional. It can be used to cancel the zero from Co’s ESR. Resr ´ COUT C2 = R3 (21) Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 19 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com APPLICATION INFORMATION DESIGN GUIDE – STEP-BY-STEP DESIGN PROCEDURE This example details the design of a high frequency switching regulator design using ceramic output capacitors. This design is available as the HPA606 evaluation module (EVM). A few parameters must be known in order to start the design process. These parameters are typically determined on the system level. For this example, we start with the following known parameters: Output Voltage 1.8 V Transient Response 1.5 A to 4.5 A load step ΔVout = 4% Maximum Output Current 6A Input Voltage 3 V to 6V, 5 V nominal Output Voltage Ripple < 30 mV p-p Switching Frequency (Fsw) 1000 kHz SELECTING THE SWITCHING FREQUENCY The first step is to decide on a switching frequency for the regulator. Typically, you want to choose the highest switching frequency possible since this produces the smallest solution size. The high switching frequency allows for lower valued inductors and smaller output capacitors compared to a power supply that switches at a lower frequency. However, the highest switching frequency causes extra switching losses, which hurt the converter’s performance. The converter is capable of running from 300 kHz to 2 MHz. Unless a small solution size is an ultimate goal, a moderate switching frequency of 1MHz is selected to achieve both a small solution size and a high efficiency operation. Using Equation 9, R4 is calculated to be 180 kΩ. A standard 1% 182 kΩ value was chosen in the design. Figure 38. High Frequency, 1.8 V Output Power Supply Design with Adjusted UVLO OUTPUT INDUCTOR SELECTION The inductor selected works for the entire TPS54618 input voltage range. To calculate the value of the output inductor, use Equation 22. KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current. The inductor ripple current is filtered by the output capacitor. Therefore, choosing high inductor ripple currents impacts the selection of the output capacitor since the output capacitor must have a ripple current rating equal to or greater than the inductor ripple current. In general, the inductor ripple value is at the discretion of the designer; however, KIND is normally from 0.1 to 0.3 for the majority of applications. For this design example, use KIND = 0.3 and the inductor value is calculated to be 0.7 mH. For this design, a nearest standard value was chosen: 0.75 mH. For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from Equation 24 and Equation 25. For this design, the RMS inductor current is 6.01 A and the peak inductor current is 6.84 A. The chosen inductor is a Toko FDV0630-R75M. It has a saturation current rating 0f 10 A and a RMS current rating of 8.9 A. 20 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 The current flowing through the inductor is the inductor ripple current plus the output current. During power up, faults or transient load conditions, the inductor current can increase above the calculated peak inductor current level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of the device. For this reason, the most conservative approach is to specify an inductor with a saturation current rating equal to or greater than the switch current limit rather than the peak inductor current. Vinmax - Vout Vout ´ L1 = Io ´ Kind Vinmax ´ ¦ sw (22) vertical spacer Iripple = Vinmax - Vout Vout ´ L1 Vinmax ´ ¦ sw (23) vertical spacer ILrms = Io 2 + æ Vo ´ (Vinmax - Vo) ö 1 ´ ç ÷ 12 è Vinmax ´ L1 ´ ¦ sw ø 2 (24) vertical spacer ILpeak = Iout + Iripple 2 (25) OUTPUT CAPACITOR There are three primary considerations for selecting the value of the output capacitor. The output capacitor determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in load current. The output capacitance needs to be selected based on the more stringent of these three criteria. The desired response to a large change in the load current is the first criteria. The output capacitor needs to supply the load with current when the regulator can not. This situation would occur if there are desired hold-up times for the regulator where the output capacitor must hold the output voltage above a certain level for a specified amount of time after the input power is removed. The regulator is temporarily not able to supply sufficient output current if there is a large, fast increase in the current needs of the load such as transitioning from no load to a full load. The regulator usually needs two or more clock cycles for the control loop to see the change in load current and output voltage and adjust the duty cycle to react to the change. The output capacitor must be sized to supply the extra current to the load until the control loop responds to the load change. The output capacitance must be large enough to supply the difference in current for 2 clock cycles while only allowing a tolerable amount of droop in the output voltage. Equation 26 shows the minimum output capacitance necessary to accomplish this. For this example, the transient load response is specified as a 3% change in Vout for a load step from 1.5 A (25% load) to 4.5 A (75% load). For this example, ΔIout = 4.5-1.5 = 3.0A and ΔVout= 0.04 × 1.8 = 0.072 V. Using these numbers gives a minimum capacitance of 83 mF. This value does not take the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in this calculation. Equation 27 calculates the minimum output capacitance needed to meet the output voltage ripple specification. Where fsw is the switching frequency, Vripple is the maximum allowable output voltage ripple, and Iripple is the inductor ripple current. In this case, the maximum output voltage ripple is 30 mV. Under this requirement, Equation 27 yields 7 uF. vertical spacer 2 ´ DIout Co > ¦ sw ´ DVout (26) vertical spacer Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 21 TPS54618 SLVSAE9 – NOVEMBER 2010 Co > www.ti.com 1 ´ 8 ´ ¦ sw 1 Voripple Iripple Where ΔIout is the change in output current, fsw is the regulators switching frequency and ΔVout is the allowable change in the output voltage. (27) vertical spacer Equation 28 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple specification. Equation 28 indicates the ESR should be less than 18 mΩ. In this case, the ESR of the ceramic capacitor is much less than 18 mΩ. Additional capacitance de-ratings for aging, temperature and DC bias should be factored in which increases this minimum value. For this example, five 22 mF 10 V X5R ceramic capacitors with 3 mΩ of ESR are used. The estimated capacitance after derating by a factor 0.75 is 82.5 µF. Capacitors generally have limits to the amount of ripple current they can handle without failing or producing excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 29 can be used to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 29 yields 520 mA. Voripple Resr < Iripple (28) vertical spacer Icorm s = Vout ´ (Vinm ax - Vout) 12 ´ Vinm ax ´ L1 ´ ¦ sw (29) INPUT CAPACITOR The TPS54618 requires a high quality ceramic, type X5R or X7R, input decoupling capacitor of at least 10 mF of effective capacitance and in some applications a bulk capacitance. The effective capacitance includes any DC bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The capacitor must also have a ripple current rating greater than the maximum input current ripple of the TPS54618. The input ripple current can be calculated using Equation 30. The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors because they have a high capacitance to volume ratio and are fairly stable over temperature. The output capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor decreases as the DC bias across a capacitor increases. For this example design, a ceramic capacitor with at least a 10 V voltage rating is required to support the maximum input voltage. For this example, two 10 mF and one 0.1 mF 10 V capacitors in parallel have been selected. The input capacitance value determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 31. Using the design example values, Ioutmax=6 A, Cin=20 mF, Fsw=1 MHz, yields an input voltage ripple of 149 mV and a rms input ripple current of 2.94 A. Icirms = Iout ´ Vout ´ Vinmin (Vinmin - Vout ) Vinmin vertical spacer Ioutmax ´ 0.25 DVin = Cin ´ ¦ sw (30) (31) SLOW START CAPACITOR The slow start capacitor determines the minimum amount of time it takes for the output voltage to reach its 22 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This is also used if the output capacitance is very large and would require large amounts of current to quickly charge the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the TPS54618 reach the current limit or excessive current draw from the input power supply may cause the input voltage rail to sag. Limiting the output voltage slew rate solves both of these problems. The slow start capacitor value can be calculated using Equation 32. For the example circuit, the slow start time is not too critical since the output capacitor value is 110 mF which does not require much current to charge to 1.8 V. The example circuit has the slow start time set to an arbitrary value of 4ms which requires a 10 nF capacitor. In TPS54618, Iss is 2.2 mA and Vref is 0.799 V. Tss(ms) ´ Iss(mA) Css(nF) = Vref(V) (32) BOOTSTRAP CAPACITOR SELECTION A 0.1 mF ceramic capacitor must be connected between the BOOT to PH pin for proper operation. It is recommended to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have 10 V or higher voltage rating. OUTPUT VOLTAGE AND FEEDBACK RESISTORS SELECTION For the example design, 100 kΩ was selected for R6. Using Equation 33, R7 is calculated as 80 kΩ. The nearest standard 1% resistor is 80.6 kΩ. Vref R7 = R6 Vo - Vref (33) Due to the internal design of the TPS54618, there is a minimum output voltage limit for any given input voltage. The output voltage can never be lower than the internal voltage reference of 0.799 V. Above 0.799 V, the output voltage may be limited by the minimum controllable on time. The minimum output voltage in this case is given by Equation 34 Voutmin = Ontimemin ´ Fsmax ´ (Vinmax - loutmin ´ RDSmin ) - Ioutmin ´ (RL + RDSmin ) Where: Voutmin = minimum achievable output voltage Ontimemin = minimum controllable on-time (75 ns typical. 120 ns no load) Fsmax = maximum switching frequency including tolerance Vinmax = maximum input voltage Ioutmin = minimum load current RDSmin = minimum high-side MOSFET on resistance (See Electrical Characteristics) RL = series resistance of output inductor (34) There is also a maximum achievable output voltage which is limited by the minimum off time. The maximum output voltage is given by Equation 35 æ Offtimemax ö æ tdead ö Voutmax = Vin ´ ç 1 ÷ - Ioutmax ´ (RDSmax + RI) - (0.7 - Ioutmax ´ RDSmax )´ ç ts ÷ ts è ø è ø Where: Voutmax = maximum achievable output voltage Vin = minimum input voltage Offtimemax = maximum off time (90 ns typical for adequate margin) ts = 1/Fs Ioutmax = maximum current RDSmax = maximum high-side MOSFET on resistance (See Electrical Characteristics) RI = DCR of the inductor tdead = dead time (60 ns) (35) Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 23 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com COMPENSATION There are several industry techniques used to compensate DC/DC regulators. The method presented here is easy to calculate and yields high phase margins. For most conditions, the regulator has a phase margin between 60 and 90 degrees. The method presented here ignores the effects of the slope compensation that is internal to the TPS54618. Since the slope compensation is ignored, the actual cross over frequency is usually lower than the cross over frequency used in the calculations. Use SwitcherPro software for a more accurate design. To get started, the modulator pole, fpmod, and the esr zero, fz1 must be calculated using Equation 36 and Equation 37. For Cout, the derated capacitance value is 82.5 µF. Use Equation 38 and Equation 39 to estimate a starting point for the crossover frequency, fc. For the example design, fpmod is 6.43 kHz and fzmod is 643 kHz. Equation 38 is the geometric mean of the modulator pole and the esr zero and Equation 39 is the mean of modulator pole and the switching frequency. Equation 38 yields 64.3 kHz and Equation 39 gives 56.7 kHz. The lower value of Equation 38 or Equation 39 is the maximum recommended crossover frequency. For this example, a lower fc value of 40 kHz is specified. Next, the compensation components are calculated. A resistor in series with a capacitor is used to create a compensating zero. A capacitor in parallel to these two components forms the compensating pole (if needed). ¦ p m od = Iout m ax 2 p ´ Vout ´ Cout (36) 1 2 p ´ Resr ´ Cout (37) vertical spacer ¦ z m od = vertical spacer ¦C = ¦p mod ´ ¦ z mod (38) vertical spacer ¦C = ¦p mod ´ ¦ sw 2 (39) vertical spacer The compensation design takes the following steps: 1. Set up the anticipated cross-over frequency. Use Equation 40 to calculate the compensation network’s resistor value. In this example, the anticipated cross-over frequency (fc) is 40 kHz. The power stage gain (gmps) is 25 A/V and the error amplifier gain (gmea) is 245 mA/V. 2p × ¦ c ´ Vo ´ Co R3 = Gm ´ Vref ´ VIgm (40) 2. Place compensation zero at the pole formed by the load resistor and the output capacitor. The compensation network’s capacitor can be calculated from Equation 41. Ro ´ Co C4 = R3 (41) 3. An additional pole can be added to attenuate high frequency noise. In this application, it is not necessary to add it. From the procedures above, the compensation network includes a 7.50 kΩ resistor and a 3300 pF capacitor. 24 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 APPLICATION CURVES EFFICIENCY vs LOAD CURRENT EFFICIENCY vs LOAD CURRENT 100 100 90 90 70 Efficiency - % 70 Efficiency - % Vin = 3.3 V 80 Vin = 5 V Vin = 3 V 80 60 50 40 60 Vin = 5 V 50 40 30 30 20 20 10 10 0 0 1 2 3 4 5 6 0 0.01 Figure 39. Iout = 2 A / div (1.5 A to 4.5 A load step) 1 10 Figure 40. TRANSIENT RESPONSE, 1.5 A STEP Vout = 50 mV / div (ac coupled) 0.1 Output Current - A Output Current - A POWER UP VOUT, VIN Vin = 2 V / div Vout = 1 V / div PWRGD = 2 V / div Time = 2 msec / div Time = 200 usec / div Figure 41. Figure 42. POWER UP VOUT, EN OUTPUT RIPPLE, 3 A Vout = 10 mV / div (ac coupled) EN = 2 V / div PH = 2 V / div Vout = 1 V / div PWRGD = 2 V / div Time = 500 nsec / div Time = 2 msec / div Figure 43. Figure 44. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 25 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com CLOSED LOOP RESPONSE, VIN (5 V), 3 A Gain - dB Vin = 100 mV / div (ac coupled) PH = 2 V / div 60 180 50 150 40 120 30 90 20 60 10 30 0 0 –10 –30 –20 –60 –30 –90 –40 –120 –50 –60 100 Time = 500 nsec / div Gain Phase 1000 Figure 45. –150 10k Frequency - Hz –180 1M 100k Figure 46. LOAD REGULATION vs LOAD CURRENT REGULATION vs INPUT VOLTAGE 0.4 0.4 0.3 0.3 Iout = 3 A Vin = 5 V Output Voltage Deviation - % Output Voltage Deviation - % Phase - Degrees INPUT RIPPLE, 3 A 0.2 0.1 Vin = 3.3 V 0 -0.1 -0.2 0.2 0.1 0 -0.1 -0.2 -0.3 -0.3 -0.4 -0.4 0 1 2 3 4 5 6 3 3.5 4 4.5 5 5.5 6 Input Voltage-V Output Current - A Figure 47. Figure 48. POWER DISSIPATION ESTIMATE The following formulas show how to estimate the IC power dissipation under continuous conduction mode (CCM) operation. The power dissipation of the IC (Ptot) includes conduction loss (Pcon), dead time loss (Pd), switching loss (Psw), gate drive loss (Pgd) and supply current loss (Pq). Pcon = Io2 × RDS_on_Temp Pd = ƒsw × Io × 0.7 × 40 × 10–9 Psw = 1/2 × Vin × Io × ƒsw× 13 × 10–9 Pgd = 2 × Vin × ƒsw× 10 × 10–9 Pq = Vin × 515 × 10–6 Where: IO is the output current (A). RDS_on_Temp is the on-resistance of the high-side MOSFET with given temperature (Ω). Vin is the input voltage (V). ƒsw is the switching frequency (Hz). 26 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 TPS54618 www.ti.com SLVSAE9 – NOVEMBER 2010 So Ptot = Pcon + Pd + Psw + Pgd + Pq For given TA, TJ = TA + Rth × Ptot For given TJMAX = 150°C TAmax = TJ max – Rth × Ptot Where: Ptot is the total device power dissipation (W). TA is the ambient temperature (°C). TJ is the junction temperature (°C). Rth is the thermal resistance of the package (°C/W). TJMAX is maximum junction temperature (°C). TAMAX is maximum ambient temperature (°C). There are additional power losses in the regulator circuit due to the inductor AC and DC losses and trace resistance that impact the overall efficiency of the regulator. LAYOUT Layout is a critical portion of good power supply design. There are several signal paths that conduct fast changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise or degrade the power supplies performance. Care should be taken to minimize the loop area formed by the bypass capacitor connections and the VIN pins. See Figure 49 for a PCB layout example. The GND pins and AGND pin should be tied directly to the power pad under the IC. The power pad should be connected to any internal PCB ground planes using multiple vias directly under the IC. Additional vias can be used to connect the top side ground area to the internal planes near the input and output capacitors. For operation at full rated load, the top side ground area along with any additional internal ground planes must provide adequate heat dissipating area. Locate the input bypass capacitor as close to the IC as possible. The PH pin should be routed to the output inductor. Since the PH connection is the switching node, the output inductor should be located very close to the PH pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. The boot capacitor must also be located close to the device. The sensitive analog ground connections for the feedback voltage divider, compensation components, slow start capacitor and frequency set resistor should be connected to a separate analog ground trace as shown. The RT/CLK pin is particularly sensitive to noise so the RT resistor should be located as close as possible to the IC and routed with minimal lengths of trace. The additional external components can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate PCB layouts, however this layout has been shown to produce good results and is meant as a guideline. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 27 TPS54618 SLVSAE9 – NOVEMBER 2010 www.ti.com VIA to Ground Plane UVLO SET RESISTORS VIN INPUT BYPASS CAPACITOR BOOT PWRGD EN VIN VIN BOOT CAPACITOR VIN OUTPUT INDUCTOR PH VIN PH EXPOSED POWERPAD AREA GND PH GND VOUT OUTPUT FILTER CAPACITOR PH SLOW START CAPACITOR RT/CLK COMP VSENSE AGND SS FEEDBACK RESISTORS ANALOG GROUND TRACE FREQUENCY SET RESISTOR TOPSIDE GROUND AREA COMPENSATION NETWORK VIA to Ground Plane Figure 49. PCB Layout Example 28 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS54618 PACKAGE OPTION ADDENDUM www.ti.com 27-Nov-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) TPS54618RTER ACTIVE WQFN RTE 16 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Purchase Samples TPS54618RTET ACTIVE WQFN RTE 16 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Request Free Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 1-Dec-2010 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS54618RTER WQFN RTE 16 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 TPS54618RTET WQFN RTE 16 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 1-Dec-2010 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS54618RTER WQFN RTE 16 3000 346.0 346.0 29.0 TPS54618RTET WQFN RTE 16 250 190.5 212.7 31.8 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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