PD - 96227 IRFH3707PbF HEXFET® Power MOSFET Applications l l l l Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes System/load switch VDSS 30V RDS(on) max Qg 12.4m @VGS = 10V 5.4nC : Benefits l l l l l l l Low RDS(ON) Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) S S S D D G D D 3mm x 3mm PQFN Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.4 ID @ TC = 25°C 29 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.8 PD @TA = 70°C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 12 c g Power Dissipation g Units A 96 W 1.8 g W/°C 0.02 -55 to + 150 °C Thermal Resistance Parameter Typ. Max. gh ––– 7.5 ––– 45 ––– 31 f RθJC Junction-to-Case RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) h Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 02/12/09 IRFH3707PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.02 9.4 ––– 12.4 VGS(th) ∆VGS(th) Gate Threshold Voltage ––– 1.35 14.5 1.8 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.2 ––– IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– Gate-to-Source Reverse Leakage Forward Transconductance ––– 17 ––– ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 12A mΩ VGS = 4.5V, ID = 9.4A 17.9 2.35 V VDS = VGS, ID = 25µA ––– mV/°C 1.0 VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C 150 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID = 9.4A Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 5.4 1.1 8.1 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 0.7 2.2 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 1.5 2.9 ––– ––– Qoss Output Charge ––– 3.8 ––– nC RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 2.0 7.8 10.2 ––– ––– ––– Ω td(off) tf Turn-Off Delay Time Fall Time ––– ––– 8.7 9.7 ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 755 171 ––– ––– Crss Reverse Transfer Capacitance ––– 83 ––– gfs Qg Qgs1 Qgs2 Qgd V VGS = 0V, ID = 250µA e e VDS = 15V nC VGS = 4.5V ID = 9.4A See Fig.17 & 18 ns pF VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 9.4A RG=1.8Ω See Fig.15 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 13 Units mJ ––– 9.4 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD c Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 3.5 A D showing the integral reverse G ––– ––– 96 (Body Diode) Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 9.4A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 20 27 30 41 ns nC TJ = 25°C, IF = 9.4A, VDD = 15V di/dt = 200A/µs ton Forward Turn-On Time 2 S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH3707PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 10 1 2.7V BOTTOM 10 2.7V ≤60µs PULSE WIDTH Tj = 25°C ≤60µs PULSE WIDTH 1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) Tj = 150°C 1 0.1 0.1 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 10 T J = 25°C TJ = 150°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 1.6 ID = 12A VGS = 10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFH3707PbF 14.0 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 9.4A C, Capacitance (pF) C oss = C ds + C gd 1000 Ciss Coss Crss 100 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 2 4 6 8 10 12 14 16 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T = 150°C J 10 TJ = 25°C 1 100µsec 10 1msec 1 Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10msec T A = 25°C 1.6 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH3707PbF 12 VGS(th) , Gate Threshold Voltage (V) 2.5 ID, Drain Current (A) 10 8 6 4 2 0 2.0 ID = 25µA 1.5 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 35 60 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH3707PbF ID = 12A 30 25 20 T J = 125°C 15 10 T J = 25°C 5 ID 2.95A 3.63A BOTTOM 9.40A TOP 50 40 30 20 10 0 2 4 6 8 10 12 14 16 18 20 25 50 75 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS VDS + V - DD IAS 20V 150 RD D.U.T. RG DRIVER D.U.T RG 125 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V L 100 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH3707PbF D.U.T Driver Gate Drive + P.W. - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH3707PbF PQFN Package Details Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRFH3707PbF PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRFH3707PbF Orderable part number Package Type IRFH3707TRPBF PQFN 3mm x 3mm Standard Pack Form Quantity Tape and Reel 4000 Note Qualification information† Qualification level Cons umer (per JE DE C JE S D47F †† ††† guidelines ) MS L1 Moisture Sensitivity Level RoHS compliant † †† ††† PQFN 3mm x 3mm ††† (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.297mH, RG = 25Ω, IAS = 9.4A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Refer to application note #AN-994. Data and specifications subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2009 10 www.irf.com