IRF IRL6372TRPBF

PD - 97622
IRL6372PbF
HEXFET® Power MOSFET
VDS
30
V
VGS
±12
V
6 '
RDS(on) max
17.9
mΩ
* '
11
nC
6 '
8.1
A
* '
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
SO-8
Applications
• Battery operated DC motor inverter MOSFET
• System/Load Switch
• Charge and Discharge Switches for Battery Application
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
IRL6372PBF
IRL6372TRPBF
SO-8
SO-8
⇒
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
95
4000
Tape and Reel
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
±12
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
8.1
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
6.5
IDM
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation e
Power Dissipation e
c
V
A
65
2.0
Linear Derating Factor
1.3
0.02
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
PD @TA = 70°C
Units
W
W/°C
°C
Notes  through „ are on page 2
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1
01/17/2011
IRL6372PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Min.
Typ.
Max.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
30
–––
–––
23
–––
–––
Static Drain-to-Source On-Resistance
–––
–––
14.0
17.0
17.9
23.0
VGS = 0V, ID = 250µA
V
mV/°C Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.1A
mΩ
VGS = 2.5V, ID = 6.5A
d
d
VGS(th)
Gate Threshold Voltage
0.5
–––
1.1
V
∆VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-4.0
–––
–––
1.0
mV/°C
Gate-to-Source Forward Leakage
–––
–––
–––
–––
150
100
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
30
–––
–––
–––
–––
11
0.01
-100
–––
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
0.50
4.8
–––
–––
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
5.69
5.3
–––
–––
RG
Gate Resistance
–––
2.2
–––
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
–––
–––
5.9
13
34
–––
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
15
1020
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
98
68
–––
–––
pF
Min.
Typ.
Max.
Units
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Conditions
Units
µA
nA
S
–––
–––
nC
VDS = VGS, ID = 10µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VDS = 10V, ID = 6.5A
VGS = 4.5V
VDS = 15V
ID = 6.5A
Ω
ns
VDD = 15V, VGS = 4.5V
ID = 6.5A
e
RG = 6.8Ω
See Figs. 18
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
2.0
–––
–––
65
–––
1.2
A
c
(Body Diode)
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
S
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
13
20
ns
TJ = 25°C, IF = 6.5A, VDD = 24V
Qrr
Reverse Recovery Charge
–––
5.3
8.0
nC
di/dt = 100/µs
V
TJ = 25°C, IS = 6.5A, VGS = 0V
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
e
f
d
d
Typ.
Max.
–––
20
–––
62.5
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ When mounted on 1 ich square copper board.
„ Rθ is measured at T J of approximately 90°C.
2
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IRL6372PbF
100
100
10
BOTTOM
1
≤60µs PULSE WIDTH
Tj = 25°C
0.1
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
10
BOTTOM
1
1.3V
1.3V
≤60µs PULSE WIDTH
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
3.0
ID = 8.1A
VGS = 4.5V
1.6
1.4
1.2
1.0
0.8
0.6
3.5
-60 -40 -20 0
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 6.5A
C, Capacitance (pF)
C oss = C ds + C gd
Ciss
1000
20 40 60 80 100 120 140 160
Coss
Crss
100
10
12.0
VDS= 24V
VDS= 15V
10.0
VDS= 6.0V
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRL6372PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
T J = 25°C
10
10msec
10
DC
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
VSD, Source-to-Drain Voltage (V)
1.0
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
9
1.4
VGS(th), Gate threshold Voltage (V)
8
7
ID, Drain Current (A)
100µsec
1msec
6
5
4
3
2
1
0
1.2
1.0
0.8
ID = 10µA
ID = 250µA
ID = 1.0mA
0.6
0.4
0.2
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (°C)
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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40
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRL6372PbF
ID = 8.1A
35
30
25
TJ = 125°C
20
15
10
T J = 25°C
5
1
2
3
4
5
6
7
8
9
60
50
Vgs = 2.5V
40
30
Vgs = 4.5V
20
10
10 11 12
0
10
20
30
40
50
60
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
250
25000
ID
TOP
1.2A
1.8A
BOTTOM 6.5A
200
20000
150
Power (W)
EAS , Single Pulse Avalanche Energy (mJ)
70
100
50
15000
10000
5000
0
25
50
75
100
125
0
1E-8
150
1E-7
Driver Gate Drive
-
‚
-
P.W.
+
ƒ
+
„
-
1E-3
P.W.
Period
D.U.T. ISD Waveform
Reverse
Recovery
Current
V DD
D=
Period
*
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
1E-4
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

RG
1E-5
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
D.U.T
1E-6
Time (sec)
Starting T J , Junction Temperature (°C)
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRL6372PbF
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
S
Qgs1 Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V(BR)DSS
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01Ω
tp
Fig 18a. Unclamped Inductive Test Circuit
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 19a. Switching Time Test Circuit
6
Fig 18b. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
td(off)
tf
Fig 19b. Switching Time Waveforms
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IRL6372PbF
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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'$7(&2'(<::
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRL6372PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
Cons umer
(per JE DE C JE S D47F
SO-8
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
†††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
8
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