MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Features • • • • • • • • • • • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance RoHS Compliant Surmount™ Package Rugged, Fully Monolithic Glass Encapsulated Construction Up to +38 dBm C.W. Power Handling1 @ +25°C Silicon Nitride Passivation Polymer Scratch Protection Functional Schematic Description MA-COM’s MASW-002103-1363 is a Surmount™ broadband monolithic SPDT switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch in applications up to 20 GHz. This Surface Mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid MMIC designs incorporating beam lead and PIN diodes that require chip and wire assembly. J3 J1 J2 The MASW-002103-1363 is fabricated using M/A-COM’s patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly. 1. 1 Power Handling Testing performed @ 2GHz Pin Configuration 2 2. Pin Function J1 RFC J2 RF1 J3 RF2 The exposed pad centered on the chip bottom must be connected to RF and DC ground. Ordering Information Part Number Package MASW-002103-13630G 50 piece gel pack MASW-002103-13635P 500 piece reel MASW-002103-13630P 3000 piece reel ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω, 20mA/-10V Parameter Frequency Units Min. Typ. Max. Insertion Loss 6 GHz 13 GHz 20 GHz dB — — — 0.55 0.80 1.05 0.63 0.93 1.25 Input to Output Isolation 6 GHz 13 GHz 20 GHz dB 45 33 23 52 38 27 — — — Return Loss 6 GHz 13 GHz 20 GHz dB 20 17.3 16.5 25 23 23 — — — — ns — 20 — — V — — 80 2 GHz dBm — 36 — Switching Speed Voltage Rating 3 4 Input 0.1dB Compression Point 3. 4. Typical Switching Speed measured fro 10% to 90 % of detected RF signal driven by TTL compatible drivers. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts. Functional Schematic Absolute Maximum Ratings 5,6 Parameter Absolute Maximum Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Junction Temperature +175 °C Applied Reverse Voltage RF CW Incident Power Bias Current +25°C |-80 V| 38dBm CW @ 2GHz, 25ºC 33dBm CW @ 20GHz, 25ºC ± 50 mA Max Operating Conditions for combination RF Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per Diode @ 85ºC @ 2GHz 5. 6. Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM does not recommend sustained operation near these survivability limits. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These devices are rated at Class 1A Human Body Model. Proper ESD control techniques should be used when handling these devices. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Typical Small Signal Performance at +25°C (On-Wafer RF Test) MASW-002103-1363 Insertion Loss Forw ard Bias (On-arm ): -10V, -20m A, Reverse Bias (Off-arm ): 20m A 0.00 0.00 -0.20 -0.40 -10.00 -0.60 -20.00 Isolation (dB) Insertion Loss (dB) MASW-002103-1363 Isolation Forw ard Bias (On-arm ):-10V, -20m A, Reverse Bias (Off-arm ): 20m A -0.80 -1.00 -1.20 -1.40 -1.60 -30.00 -40.00 -50.00 -60.00 -70.00 -1.80 -80.00 -2.00 0.0 5.0 10.0 15.0 20.0 25.0 0.0 30.0 5.0 10.0 Frequency (GHz) 15.0 20.0 25.0 30.0 Frequency (GHz) MASW-002103-1363 Return Loss Forw ard Bias (On-arm ): -10V, -20m A, Reverse Bias (Off-arm ): 20m A 0.00 Return Loss (dB) -5.00 -10.00 Input J1 to J2 -15.00 Input J1 to J3 -20.00 -25.00 -30.00 Output J2 -35.00 Output J3 -40.00 -45.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Freq [GHz] Typical Power Performance at +25°C 12 MASW-002103-1363 Maximum Input Power Curve Baseplate Temperature fixed @ 25degC Input Power (Watts) 10 8 2GHz, 6.7W 6 4 10GHz, 3.5W 2 22GHz, 2W 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Insertion Loss (dB) 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Driver Connections Bias Control Optimal operation of the MASW-002103-1363 is achieved by simultaneous application of negative DC voltage and current to the low loss switching arm and positive DC voltage and current to the remaining switching arm as shown in the applications circuit below. DC return is achieved via R2 on the RFC path. In the low loss state, the series diode must be forward biased with current and the shunt diode reverse biased with voltage. In the isolated arm, the shunt diode is forward biased with current and the series diode is reverse biased with voltage. J2 J3 Condition of RF Output J1-J2 -10V at 20mA 7 + 20mA +20mA Low Loss Isolation -10V at 7 20mA Isolation Low Loss Control Level (DC Currents and Voltages) Condition of RF Output J1-J3 7. As long as 20mA is applied through the on diodes, the voltage can vary. Applications Circuit 4 Notes: 1. Assume Vf ~ 1V at 20mA 2. With +5V bias, R1 = 4V / 0.02A = 200Ω 3. PR1 = 0.02A x 4V = 0.08 W 4. With -10V bias, R1 + R2 = 9V / 0.02A = 450Ω 5. PR2 = 0.02A x 0.02A x 250 = 0.1 W 6. Reverse Bias on off-diode is ~6V 7. Inductors are printed lines (λ / 4) R2 = 250Ω ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 MASW-002103-1363 Outline Drawing Top View Side View 1545 J2 Back Metal 125 J3 2225 J1 Units are in µm MASW- 002103-1363 DIM 5 Inches mm MIN MAX MIN MAX Width 0.060 0.062 1.52 1.57 Length 0.087 0.089 2.20 2.25 Thickness 0.004 0.006 0.10 0.15 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Handling Procedures Attachment to a circuit board is made simple through the use of standard surface mount technology. Mounting pads are conveniently located on the bottom surface of these devices and are removed from the active junction locations. These devices are well suited for solder attachment onto hard and soft substrates. The use of 80Au/20Sn, or RoHS compliant solders is recommended. For applications where the average power is ≤ 1W, conductive silver epoxy may also be used. Cure per manufacturers recommended time and temperature. Typically 1 hour at 150°C. When soldering these devices to a hard substrate, a solder re-flow method is preferred. A vacuum tip pick-up tool and a force of 60 to100 grams applied to the top surface of the device while placing the chip is recommended. When soldering to soft substrates, such as Duroid, it is recommended to use a soft solder at the circuit board to mounting pad interface to minimize stress due to any TCE mismatches that may exist. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Solder reflow should not be performed by causing heat to flow through the top surface of the die to the back. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after attachment is completed. Typical re-flow profiles for Sn60/Pb40 and RoHS compliant solders is provided in Application Note M538 , “Surface Mounting Instructions“ and can viewed on the MA-COM Technology Solutions website @ www.macomtech.com Sample Board Samples test boards are available upon request 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Pocket Tape Dimensions .157 ± .004 4.00 ± 0.10 .157 ± .004 4.00 ± 0.10 .079 ± .002 2.00 ± 0.05 Ф .059 ± .004 THRU 1.5 ± .069 ± .004 1.75 ± 0.10 +.012 .138 3.5 ± 0.05 +0.30 8.00 - 0.10 .093 ± .002 2.36 ± 0.05 Ф 0.035 THRU TYP. Ф 0.89 .012 ± .001 0.30 ± 0.03 5° MAX. .012 ± .002 0.30 ± 0.05 POCKET DEPTH .066 ± .002 1.80 ± 0.05 Chip Orientation in Pocket 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V4 Reel Information W1 W1 & W2 measured at hub W2 B C A D INCHES MIN. MAX. MIN. MAX. A 6.98 7.02 177.3 178.3 B .059 .098 1.5 2.5 C .504 .520 12.8 13.2 D .795 .815 20.2 20.7 N 2.14 2.19 54.5 55.5 W1 .331 .337 8.4 8.55 W2 — .567 — 14.4 DIM 8 N MM ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.