PRELIMINARY DATA SHEET D LND090A/B/C/D Revolutionary LF-MCTs Replace MOSFETs, Bipolars & IGBTs In Switching Apps with only 1.9nC Gate Charge GENERAL DESCRIPTION Linear Dimensions introduces the revolutionary Linear Fast MCT (LF-MCT). A Linear Dimensions proprietary MCT construction (PATENTS PENDING) allows LF-MCTs for the first time to be used in fast switching applications where MOSFETs, bipolars & IGBTs are more commonly used. LF-MCTs represent the highest current density of any switching pass element. In the past MCTs have had switching times in the 800ns+ range and been focused on high current applications. Linear Dimensions brings LFMCTs to high frequency offline AC/DC and DC/DC switching applications with turn on times of <30ns and turn off times of <200ns (600V devices). In AC/DC offline applications such as offline flyback converters or switching LED drivers, LF-MCTs require 1/3 the drive current of the MOSFETs typically used. Additionally, th LF-MCTs require 1/3 to 1/8 the silicon area of a MOSFET for a similar voltage drop at rated current saving space and cost. Fast LF-MCTs can be used as a replacement for IGBTs where they have a Vf that is as much as 40% lower than a typical IGBTs. Although Fast LF-MCTs must be driven with a +/- gate voltage, the small current requirement allows the negative voltage to be generated from the output of a typical switching gate drive. Additionally, a positive or negative pulse will latch them on or off and a continuous voltage is not required. The LND090 are packaged in lead free TO-252 packages or available as bare die. PASS ELEMENT CURRENT DENSITY DENSITY COMPARISON OF 600V DEVICES WITH LESS THAN 1 us TURN-OFF TIME N-MCT CURRENT DENSITY (/ A/ cm2) P-MCT 1000 FEATURES 600V/1500V anode to cathode voltage Off leakage 30% of equivalent MOSFET High impedance MOSFET-like gate Vg=+/- 5V gate drive, pulsed OK Turn off current: 1A & 3A LF-MCTs (A,B) 10A & 40A LF-MCTs (C,D) Low gate capacitance ~ 380pF Ultra fast rise times ~ 17ns Sub ~200ns fall times Silicon area reduced to as little as 30% of the silicon of a MOSFET with equivalent Vf Up to 10x the peak current capability of an equivalent MOSFET >40% lower forward Vf drop than IGBTs (1.3-1.6V vs. ~2.2V for IGBT) High current density >> 300 Amp Peak Lead free RoHS compliant TO-252 PKG Also available as bare die APPLICATIONS Crowbar protection circuits High-voltage surge suppressors Uninterruptible Power Supplies Capacitor discharge safety switches White Goods, Rice Cookers AC/DC Flyback Converters DC/DC Switching Applications Resonant switching Plasma Televisions Camera Strobe N-IGBT 100 PACKAGE & SYMBOL A DARLINGTON A 10 N-MOSFET 0 1.0 TEMPERATURE: 25C CELL SIZE: 35 um 0.5 1.0 1.5 2.0 2.5 FORWARD DROP (VOLTS) Modelled Forwa rd Drop Compa rison of MOS Ga ted Power Devices G G K D-Pak K LF-MCT