New Product VFT3045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 3 • Halogen-free according to IEC 61249-2-21 definition VFT3045C PIN 1 TYPICAL APPLICATIONS PIN 2 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 45 V IFSM 200 A VF at IF = 15 A 0.39 V TJ max. 150 °C Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VFT3045C UNIT VRRM 45 V 30 per device per diode IF(AV) A 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C Revision: 23-Sep-11 Document Number: 89355 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VFT3045C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage per diode VF (1) IF = 5 A TA = 125 °C IF = 7.5 A IF = 15 A TA = 25 °C VR = 45 V Reverse current per diode TYP. MAX. 0.42 - 0.44 - 0.49 0.57 0.30 - V 0.33 - 0.39 0.48 - 2000 μA 17 50 mA IR (2) TA = 125 °C UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT3045C UNIT 6.0 per diode Typical thermal resistance °C/W RJC per device 4.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.76 4W 50/tube Tube VFT3045C-M3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 9 D = 0.5 8 30 Average Power Loss (W) Average Forward Rectified Current (A) 35 25 20 15 10 5 7 D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 D = tp/T 1 0 D = 0.8 D = 0.3 tp 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 23-Sep-11 Document Number: 89355 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VFT3045C www.vishay.com Vishay General Semiconductor 100 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.7 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 10 100 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 40 60 80 1 0.1 0.01 0.001 20 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) Revision: 23-Sep-11 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) Document Number: 89355 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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