New Product VB40M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation K • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 1 TYPICAL APPLICATIONS VB40M120C PIN 1 PIN 2 For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. K HEATSINK MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM 250 A VF at IF = 20 A 0.64 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL VB40M120C UNIT VRRM 120 V 40 per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) 20 A IFSM 250 dV/dt 10 000 V/μs TJ, TSTG - 40 to + 150 °C Document Number: 89468 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 11-Jan-12 New Product VB40M120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C Reverse current per diode - 0.64 - 0.79 0.89 0.46 - UNIT V - 0.64 0.72 TA = 25 °C 4 - μA TA = 125 °C 3 - mA - 500 μA 6 32 mA IR (2) TA = 25 °C VR = 120 V MAX. 0.54 0.54 IF = 20 A VR = 90 V TYP. TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 20 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL VB40M120C UNIT RθJC 1.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB40M120C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB40M120C-E3/8W 1.39 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES 18.0 50 Resistive or Inductive Load 16.0 Average Power Loss (W) Average Forward Rectified Current (A) (TA = 25 °C unless otherwise noted) 40 30 20 10 D = 0.3 D = 0.2 14.0 D = 0.8 D = 0.1 12.0 D = 1.0 10.0 8.0 T 6.0 4.0 2.0 Mounted on Specific Heatsink D = 0.5 D = tp/T tp 0.0 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 2 4 6 8 10 12 14 16 18 20 22 24 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89468 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 11-Jan-12 New Product VB40M120C www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 TA = 150 °C 1 TA = 125 °C TA = 100 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Instantaneous Forward Voltage (V) 0.1 0.01 TA = 25 °C 0.001 0.0001 20 40 60 80 100 10 Junction to Case 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.624 (15.85) 0.591(15.00) 0.205 (5.20) 0.195 (4.95) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) PIN 1 PIN 2 0.42 MIN. (10.66) 0.055 (1.40) 0.047 (1.19) 0-0.01 (0-0.254) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout K-HEATSINK 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) 0.095 (2.41) Document Number: 89468 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 11-Jan-12 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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