VT2045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application 2 VT2045CBP • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 1 TYPICAL APPLICATIONS PIN 1 PIN 2 PIN 3 CASE For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 2 x 10 A VRRM 45 V IFSM 160 A VF at IF = 10 A 0.41 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t 1 h SYMBOL VT2045CBP UNIT VRRM 45 V IF(AV) (1) 20 A 10 IFSM 160 A TOP, TSTG - 40 to + 150 °C TJ (2) 200 °C Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 22-May-12 Document Number: 89364 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2045CBP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage per diode TA = 25 °C IF = 10 A VF (1) IF = 5 A TA = 125 °C IF = 10 A TA = 25 °C VR = 45 V Reverse current per diode SYMBOL IR (2) TA = 125 °C TYP. MAX. 0.44 - 0.49 0.58 0.33 - UNIT V 0.41 0.52 - 2000 μA 10 30 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL per diode Typical thermal resistance VT2045CBP RJC per device UNIT 3.0 °C/W 2.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT2045CBP-M3/4W 1.88 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES 24 6 20 5 D = 0.8 Average Power Loss (W) DC Forward Rectified Current (A) (TA = 25 °C unless otherwise noted) 16 12 8 DC Forward Current at Thermal Equilibrium 4 D = 0.5 D = 0.3 4 D = 0.2 D = 1.0 3 D = 0.1 T 2 1 D = tp/T tp 8 10 0 0 100 120 140 160 180 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 22-May-12 0 2 4 6 12 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89364 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2045CBP www.vishay.com Vishay General Semiconductor 10 000 TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 40 60 80 1 0.1 0.01 0.001 20 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.104 (2.65) 0.096 (2.45) Revision: 22-May-12 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Document Number: 89364 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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