VISHAY VT2045CBP_12

VT2045CBP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5.0 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• TJ 200 °C max. in solar bypass mode application
2
VT2045CBP
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
1
TYPICAL APPLICATIONS
PIN 1
PIN 2
PIN 3
CASE
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
2 x 10 A
VRRM
45 V
IFSM
160 A
VF at IF = 10 A
0.41 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
200 °C
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t  1 h
SYMBOL
VT2045CBP
UNIT
VRRM
45
V
IF(AV) (1)
20
A
10
IFSM
160
A
TOP, TSTG
- 40 to + 150
°C
TJ (2)
 200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 22-May-12
Document Number: 89364
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2045CBP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 10 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
TA = 25 °C
VR = 45 V
Reverse current per diode
SYMBOL
IR (2)
TA = 125 °C
TYP.
MAX.
0.44
-
0.49
0.58
0.33
-
UNIT
V
0.41
0.52
-
2000
μA
10
30
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VT2045CBP
RJC
per device
UNIT
3.0
°C/W
2.0
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT2045CBP-M3/4W
1.88
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
24
6
20
5
D = 0.8
Average Power Loss (W)
DC Forward Rectified Current (A)
(TA = 25 °C unless otherwise noted)
16
12
8
DC Forward Current at
Thermal Equilibrium
4
D = 0.5
D = 0.3
4
D = 0.2
D = 1.0
3
D = 0.1
T
2
1
D = tp/T
tp
8
10
0
0
100
120
140
160
180
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 22-May-12
0
2
4
6
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Document Number: 89364
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2045CBP
www.vishay.com
Vishay General Semiconductor
10 000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
40
60
80
1
0.1
0.01
0.001
20
Junction to Case
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
Revision: 22-May-12
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Document Number: 89364
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Revision: 12-Mar-12
1
Document Number: 91000