KERSEMI IRFR3518PBF

IRFR3518PbF
IRFU3518PbF
Applications
High frequency DC-DC converters
l Lead-Free
l
VDSS
RDS(on) max
ID
80V
29mW
30A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3518
I-Pak
IRFU3518
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
dv/dt
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
80
± 20
38
27
150
110
0.71
5.2
-55 to + 175
V
A
W
W/°C
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)†
Junction-to-Ambient
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Typ.
Max.
Units
–––
–––
–––
1.4
40
110
°C/W
1
12/03/04
IRFR/U3518PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
80
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.09
24
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA †
29
mΩ VGS = 10V, ID = 18A „
4.0
V
VDS = VGS, ID = 250µA
20
VDS = 80V, VGS = 0V
µA
250
VDS = 64V, VGS = 0V, TJ = 150°C
200
VGS = 20V
nA
-200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
34
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
11
12
12
25
37
13
1710
270
33
1780
170
330
Max. Units
Conditions
–––
S
VDS = 25V, ID = 18A
56
ID = 18A
–––
nC
VDS = 40V
–––
VGS = 10V „
–––
VDD = 40V
–––
I
D = 18A
ns
–––
RG = 9.1Ω
–––
VGS = 10V „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 64V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
160
18
11
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Q rr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
38
––– –––
showing the
A
G
integral reverse
––– ––– 150
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 18A, VGS = 0V „
––– 77 –––
ns
TJ = 25°C, IF = 18A
––– 210 –––
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFR/U3518PbF
TOP
I D, Drain-to-Source Current (A)
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
100
I D, Drain-to-Source Current (A)
1000
10
4.5V
1
0.1
BOTTOM
10
4.5V
1
20µs PULSE WIDTH
T J= 25 ° C
20µs PULSE WIDTH
T J= 175 ° C
0.01
0.1
1
10
100
0.1
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
I D = 38A
2.5
100.00
T J = 175°C
10.00
VDS = 25V
20µs PULSE WIDTH
1.00
4.0
6.0
8.0
10.0
12.0
14.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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16.0
2.0
(Normalized)
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
1000.00
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
°
Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U3518PbF
100000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C iss
1000
C oss
100
C rss
ID= 18A
VDS= 40V
VDS= 64V
10
VDS= 16V
8
6
4
2
0
10
1
10
0
100
10
VDS, Drain-to-Source Voltage (V)
20
30
40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
I SD , Reverse Drain Current (A)
100
TJ = 175 ° C
10
T J= 25 ° C
1
V GS = 0 V
0.5
1.0
1.5
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
0.1
0.0
100µsec
10
2.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3518PbF
40
RD
V DS
LIMITED BY PACKAGE
VGS
I D , Drain Current (A)
D.U.T.
RG
30
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
10
1
Thermal Response
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1/ t
2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U3518PbF
320
15V
ID
7.3A
13A
18A
TOP
+
V
- DD
IAS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
BOTTOM
DRIVER
L
VDS
240
160
80
0
25
50
75
100
125
150
175
( ° C)
Starting Tj, Junction Temperature
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U3518PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U3518PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN T HE ASS EMBLY LINE "A"
PART NUMBER
INT ERNATIONAL
RECT IFIER
LOGO
Note: "P" in ass embly line pos ition
indicates "Lead-Free"
IRFU120
12
916A
34
AS SEMBLY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INT ERNATIONAL
RECT IFIER
LOGO
IRFU120
12
AS SEMBLY
LOT CODE
8
34
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = AS S EMBLY S IT E CODE
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IRFR/U3518PbF
I-Pak (TO-251AA) Package Outline
(Dimensions are shown in millimeters (inches) )
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120
WIT H AS SEMBLY
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN T HE ASS EMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
IRFU120
919A
56
78
AS SEMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFU120
56
AS S EMBLY
LOT CODE
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78
DATE CODE
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 19
A = AS S EMBLY S ITE CODE
9
IRFR/U3518PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.99mH
R G = 25Ω, IAS = 18A.
ƒ ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
10
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to application note #AN-994.
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