PANJIT SBT10100VFCT_T0_00001

SBT10100VFCT
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
100 Volts
CURRENT
10 Amperes
• Ultra Low forward voltage drop, low power losses
• High efficiency operation
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.272(6.9)
0.248(6.3)
0.112(2.85)
0.100(2.55)
FEATURES
0.130(3.3)
0.114(2.9)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.056 ounces, 1.6 grams.
0.100(2.55)
0.543(13.8)
0.512(13.0)
MECHANICAL DATA
0.177(4.5)
0.137(3.5)
0.606(15.4)
0.583(14.8)
• Lead free in comply with EU RoHS 2011/65/EU directives
0.114(2.9)
0.098(2.5)
0.027(0.67)
0.022(0.57)
0.100(2.55)
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum rms voltage
VRMS
70
V
VR
100
V
Maximum dc blocking voltage
Maximum average forward rectified current
per device
per diode
I F(AV)
10
5
A
Peak forward surge current : 8.3ms single half
sine-wave superimposed on rated load
per diode
I FSM
80
A
CJ
300
pF
R JC
15
TJ
-55 to + 150
o
C
TSTG
-55 to + 150
o
C
Typical junction capacitance (V R=4V, f=1MHz)
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
( No te 1 )
O
C /W
Note : 1. Mounted on infinite heatsink.
June 21,2013-REV.00
PAGE . 1
SBT10100VFCT
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
SYMBOL
Breakdown voltage per diode
V BR
I R=0.5mA
VF
I F=1A
I F=2A
I F=5A
I F=1A
I F=2A
I F=5A
Instantaneous forward voltage per
diode
Reverse current per diode
IF, Forward Current (A)
TEST CONDITIONS
-
-
V
-
0.45
0.51
0.36
0.46
0.62
0.74
-
V
V
A
mA
VR=100V
TJ=25oC
TJ=125oC
-
3
60
-
A
mA
2
1
Per Diode
0
125
150
TC, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
1000
100
10
Per Diode
1
1
10
100
VR, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
10
100
TJ = 150°C
IF, Forward Current (A)
IR, Reverse Current (mA)
100
-
3
100
UNIT
1.8
1.7
4
75
MAX.
-
IR
50
TYP.
TJ=25oC
TJ=125oC
5
25
TJ=125oC
MIN.
VR=70V
6
0
TJ=25oC
CJ, Junction Capacitance (pF)
PARAMETER
10
1
TJ = 125°C
0.1
TJ = 75°C
0.01
Per Diode
0.001
TJ = 25°C
0.0001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
June 21,2013-REV.00
TJ = 150°C
TJ = 125°C
1
TJ = 75°C
0.1
TJ = 25°C
Per Diode
0.01
0
0.2
0.4
0.6
0.8
1
VF, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
PAGE . 2
SBT10100VFCT
Part No_packing code_Version
SBT10100VFCT_T0_00001
SBT10100VFCT_T0_10001
For example :
RB500V-40_R2_00001
Serial number
Version code means HF
Packing size code means 13"
Part No.
Packing type means T/R
Packing Code XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
June 21,2013-REV.00
Version Code XXXXX
1st Code
Packing size code
A
N/A
0
HF
0
serial number
R
7"
1
RoHS
1
serial number
B
13"
2
T
26mm
X
S
52mm
Y
L
F
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
2nd Code HF or RoHS 1st Code 2nd~5th Code
U
D
PAGE . 3
SBT10100VFCT
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of fitness for particular purpose, non-infringement and merchantability.
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suitable for the specified use without further testing or modification.
•
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level of reliability or relating to human life and for any applications concerning life-saving
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June 21,2013-REV.00
PAGE . 4