ONSEMI SS2003M

Ordering number : EN8345B
SS2003M
Schottky Barrier Diode
http://onsemi.com
30V, 2.0A, Low VF, Single MCPH6
Applications
•
•
High frequency rectification (switching regulators, converters, choppers)
Halogen free compliance
Features
•
•
•
Small Switching noise
Low forward voltage (IF=2A, VF max=0.40V)
Small package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Conditions
Ratings
Unit
VRRM
VRSM
30
30
V
2.0
A
Surge Forward Current
IO
IFSM
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
50Hz sine wave, 1 cycle
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
7022A-014
Device
Package
SS2003M-TL-W
6
5
Packing Type : TL
4
0.25
0.3
0.85
0.07
TL
3
0.65
SF
LOT No.
2
3,000
pcs./reel
Marking
LOT No.
0 to 0.02
1
memo
Pb-Free
and
Halogen Free
SS2003M-TL-W
0.15
2.1
1.6
0.25
2.0
MCPH6
SC-88, SC-70-6, SOT-363
Shipping
1
2
3
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Cathode
6 : Cathode
6
5
4
MCPH6
Semiconductor Components Industries, LLC, 2013
May, 2013
Electrical Connection
6
5
4
1
2
3
52913 TKIM TC-00002896/O0312 TKIM/62005SB MSIM TB-00001370 No.8345-1/5
SS2003M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
VR
Forward Voltage
VF
Reverse Current
Interterminal Capacitance
IR
C
Reverse Recovery Time
trr
IR=2.0mA
IF=1.0A
IF=2.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted in Cu-foiled area of
Rth(j-a)1
Thermal Resistance
Conditions
1.44mm2×0.03mm on glass epoxy substrate
When mounted on ceramic substrate (500mm2×0.8mm)
Rth(j-a)2
Ratings
min
typ
max
30
Unit
V
0.30
0.35
0.35
0.40
V
1.25
mA
75
V
pF
20
ns
93.4
°C / W
71.4
°C / W
trr Test Cicuit
50Ω
100Ω
10μs
10Ω
10mA
100mA 100mA
Duty≤10%
--5V
trr
No.8345-2/5
SS2003M
IF -- VF
12
10 5°C
0°
C
75
°C
50
°C
25°
C
1.0
7
5
°C
--25
0.1
7
5
3
2
0.01
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
(2)(4)(3)
θ
360°
Sine wave
0.6
180°
360°
0.4
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.2
0
0
50°C
25°C
--25°C
0
10
5
15
20
25
30
Reverse Voltage, VR -- V
35
IT08574
C -- VR
5
(1)
1.0
0.8
75°C
7
0.5
1.0
1.5
2.0
Average Forward Current, IO -- A
2.5
IT08575
IFSM -- t
14
Surge Forward Current, IFSM(Peak) -- A
0.50
PF(AV) -- IO
Rectangular
wave
100°C
IT08573
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
Forward Voltage, VF -- V
1.2
°C
Ta=125
Reverse Current, IR -- mA
3
2
3
2
IR -- VR
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
7
5
3
2
0.0001
Ta
=
Forward Current, IF -- A
10
7
5
3
2
100
7
5
3
2
0.1
2
3
5
7 1.0
2
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
IT08576
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
No.8345-3/5
SS2003M
Outline Drawing
SS2003M-TL-W
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.8345-4/5
SS2003M
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PS No.8345-5/5