SB3003CH Schottky Barrier Diode 30V, 3A, Low IR, Single www.onsemi.com Applications • High frequency rectification (switching regulators, converters, choppers) Features • • • • Small switching noise Low leakage current and high reliability due to highly reliable planar structure Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.9mm) Halogen free compliance : SB3003CH-TL-W Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 30 Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V V Average Output Current IO 3.0 A Surge Forward Current IFSM 20 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C 50Hz sine wave, 1 cycle Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7018A-012 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 2 0.95 3 0.4 0.9 1 : Cathode 2 : Cathode 3 : No contact 4 : Anode 5 : Cathode 6 : Cathode LOT No. 1 SF 1.6 0.05 0.2 0.6 2.8 0.2 0.6 5 SB3003CH-TL-E SB3003CH-TL-W 0.15 2.9 6 TL Electrical Connection 6 5 4 1 2 3 CPH6 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October 2014 - Rev. 1 1 Publication Order Number : SB3003CH/D SB3003CH Electrical Characteristics at Ta=25°C Parameter Symbol Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Ratings Conditions min VR VF1 IR=0.5mA IF=2.0A VF2 IF=3.0A IR C VR=15V VR=10V, f=1MHz trr Rth(j-a) IF=IR=100mA, See specified Test Circuit. typ Unit max 30 V 0.435 0.485 V 0.47 0.52 V 42 90 pF 20 When mounted on ceramic substrate (900mm2×0.8mm) mA 50 ns °C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 50Ω 100Ω 10Ω 10ms --5V 10mA Duty≤10% 100mA 100mA trr Test Cicuit trr ORDERING INFORMATION Device Package SB3003CH-TL-E Shipping CPH6 SB3003CH-TL-W 3,000pcs./reel IF -- VF 10 7 5 10000 Reverse Current, IR -- mA 2 1.0 7 5 3 2 25° 100 C °C 75° C 50°C 25°C 0°C --25° C 0.1 7 5 3 2 IR -- VR Ta=125°C 100°C 0 0.1 0.2 0.3 75°C 100 50°C 10 25°C 1.0 0°C 0.1 --25°C 0.01 Ta= 1 Forward Current, IF -- A Pb-Free and Halogen Free 1000 3 0.01 memo Pb-Free 0.4 0.5 Forward Voltage, VF -- V 0.6 0.001 0.7 IT09868 www.onsemi.com 2 0 5 10 15 20 25 Reverse Voltage, VR -- V 30 35 IT09869 PF(AV) -- IO (1) Rectangular wave 1.8 1.6 3.00E--04 360° Sine wave 1.2 0.2 0 0 0.5 1.0 1.5 2.5 Average Output Current, IO -- A 3.0 100 0.00E+00 3.5 Rectangular wave 60 40 20 0 θ 360° Sine wave (1) (2) (4) (3) 180° 0.5 1.0 1.5 2.5 2.0 Average Output Current, IO -- A 3.0 IFSM -- t 24 IT10632 8 4 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00523 www.onsemi.com 3 25 30 35 IT10631 C -- VR 7 5 3 0.1 3.5 20ms t 7 0.01 20 100 12 0 15 2 IS 16 10 Peak Reverse Voltage, VR -- V 3 Current waveform 50Hz sine wave 20 5 0 5 360° 0 (4) 7 *When mounted in reliability operaion board, Rth(J-a)=50°C/W 80 VR IT09870 Tc -- IO 180° 5.00E--05 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 120 Case Temperature, Tc -- °C 2.0 360° 1.00E--04 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.4 (3) Sine wave 1.50E--04 0.6 (2) R 2.00E--04 360° 0.8 (1) 360° θ Rectangular wave V 2.50E--04 180° 1.0 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 3.50E--04 140 Surge Forward Current, IFSM(Peak) -- A (2) (4) (3) θ 1.4 PR(AV) -- VR 4.00E--04 Average Reverse Power Dissipation, PR(AV) -- W 2.0 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W SB3003CH 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09871 SB3003CH Outline Drawing SB3003CH-TL-E, SB3003CH-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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