SBE808-TL-W

Ordering number : ENA0451B
SBE808
Schottky Barrier Diode
http://onsemi.com
15V, 1A, Low IR
Applications
• High frequency rectification (switching regulators, converters, choppers)
Features
• Small switching noise • Halogen free compliance
• Low leakage current and high reliability due to planar structure
• Ultrasmall package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
15
Nonrepetitive Peak Reverse Surge Voltage
VRSM
17
V
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
10
A
Junction Temperature
Tj
--55 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
50Hz sine wave, 1 cycle
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
Package Dimensions
• Package
: MCPH5
• JEITA, JEDEC
: SC-88A, SC-70-5, SOT-353
• Minimum Packing Quantity : 3,000 pcs./reel
unit : mm (typ)
7021A-001
5
SBE808-TL-E
SBE808-TL-W
0.15
Packing Type : TL
Marking
4
SE
LOT No.
LOT No.
0 to 0.02
2.1
1.6
0.25
2.0
0.25
TL
1
2
3
0.65
0.3
0.07
0.85
Electrical Connection
5
1
5
2
3
4
4
1 : Anode
2 : No Contact
3 : Anode
4 : Cathode
5 : Cathode
MCPH5
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
52714HK TC-00002916/91912TKIM/N0106SYIM SB No. A0451-1/4
SBE808
Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Symbol
Reverse Voltage
Forward Voltage
Ratings
Conditions
VR
VF1
IR=0.1mA
IF=0.5A
VF2
IR
min
Unit
max
15
Interterminal Capacitance
C
IF=1A
VR=6V
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Thermal Resistance
Rth(j-a)
When mounted on ceramic substrate (600mm2×0.8mm)
Reverse Current
typ
V
0.43
0.48
V
0.49
0.54
V
3.0
mA
20
pF
10
ns
185
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
50Ω
100Ω
10Ω
10ms
10mA
Duty≤10%
100mA 100mA
trr Test Circuit
--5V
trr
Ordering Information
Package
Shipping
memo
SBE808-TL-E
Device
MCPH5
3,000pcs./reel
Pb-Free
SBE808-TL-W
MCPH5
3,000pcs./reel
Pb-Free and Halogen Free
IF -- VF
50°
12 C
5°
100 C
°C
25°
C
50°
C
25 °
C
0°C
--25
°C
0.01
7
5
3
2
125°C
100°C
0
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage, VF -- V
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.6
0.5
75°C
10
50°C
1.0
25°C
0.1
0°C
0.01
--25°C
(1)
0.7
0.0001
0
1.2E--05
(2) (4) (3)
1.0E--05
8.0E--06
0.4
Rectangular wave
0.3
θ
0.2
360°
Sine wave
0.1
0.2
0.4
0.6
0.8
4
360°
Average Output Current, IO -- A
1.0
1.2
IT11245
Rectangular
wave
4.0E--06
Sine wave
0
8
10
12
14
16
IT11244
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
θ
0.0E+00
6
Reverse Voltage, VR -- V
PR(AV) -- VRM
6.0E--06
2.0E--06
180°
0
2
IT11243
PF(AV) -- IO
0.7
100
0.001
Average Reverse Power Dissipation, PR(AV) -- W
Average Forward Power Dissipation, PF(AV) -- W
Reverse Current, IR -- mA
0.1
7
5
3
2
0
Ta=150°C
1000
1.0
7
5
3
2
0.001
IR -- VR
10000
Ta=
1
Forward Current, IF -- A
10
7
5
3
2
(1)
(2)
VR
(3)
360°
180°
(4)
VR
360°
2
4
6
8
10
12
Peak Reverse Voltage, VRM -- V
14
16
IT11246
No. A0451-2/4
SBE808
C -- VR
f=1MHz
7
5
3
2
10
0.1
2
3
5
7
1.0
2
3
Reverse Voltage, VR -- V
5
7
10
IFSM -- t
12
Surge Forward Current, IFSM(Peak) -- A
Interterminal Capacitance, C -- pF
100
2
IT07885
Current waveform 50Hz sine wave
IS
10
20ms
t
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
IT00626
No. A0451-3/4
SBE808
Outline Drawing
SBE808-TL-E, SBE808-TL-W
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
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PS No. A0451-4/4