Schottky Barrier Diode, 30V, 1A, Low IR

Ordering number : ENA1055B
SBE807
Schottky Barrier Diode
http://onsemi.com
30V, 1A, Low IR
Applications
• High frequency rectification (switching regulators, converters, and choppers)
Features
• Low switching noise
• Low reverse current (VR=16V, IR max=15µA)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
V
Average Output Current
IO
1.0
A
Surge Forward Current
IFSM
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
50Hz sine wave, 1 cycle
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
unit : mm (typ)
7017A-001
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
5
4
SBE807-TL-E
SBE807-TL-W
0.15
2.9
3
Packing Type : TL
Marking
LOT No.
SJ
0.05
1.6
2.8
0.2
0.6
Package Dimensions
0.9
0.2
0.6
TL
1
0.95
2
0.4
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
Electrical Connection
5
4
3
CPH5
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
31814HK TC-00002874/91912TKIM/22708TIIM SB No. A1055-1/4
SBE807
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
VR
VF1
IR=0.2mA
IF=0.7A
VF2
IR
IF=1.0A
VR=16V
VR=10V, f=1MHz
Interterminal Capacitance
C
Reverse Recovery Time
trr
Rth(j-a)
Thermal Resistance
Ratings
Conditions
min
typ
Unit
max
30
V
0.45
0.50
0.48
0.53
V
V
mA
15
27
pF
IF=IR=100mA, See specified Test Circuit.
10
When mounted on ceramic substrate (900mm2×0.8mm)
ns
111
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
trr Test Circuit
100Ω
10Ω
10µs
10mA
50Ω
100mA 100mA
Duty≤10%
--5V
trr
Ordering Information
Device
Package
SBE807-TL-E
Shipping
CPH5
SBE807-TL-W
3,000pcs./reel
IF -- VF
3
Reverse Current, IR -- µA
7
5
3
2
0.1
7
5
Ta=
125
°C
100
°C
75°C
50°C
25°C
0°C
--25°C
3
2
Ta=125°C
100°C
0.1
0
0.8
0.2
0.5
0.6
0.7
(2) (4)(3) (5)
360°
0.4
0.3
0.2
0.1
0
0
0.2
0.4
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
0.6
0.8
0 °C
0.1
5
0.01
5
--25°C
0
5
10
1.0
Average Output Current, IO -- A
1.2
1.4
IT13283
15
20
25
30
Reverse Voltage, VR -- V
35
IT09554
Ta -- IO
150
180°
0.5
25°C
1.0
5
0.0001
θ
(1)
50°C
10
5
IT09553
PF(AV) -- IO
360°
Sine
wave
0.6
0.4
Forward Voltage, VF -- V
Rectangular
wave
0.7
0.3
75°C
100
5
0.001
5
Ambient Temperature, Ta -- °C
Forward Current, IF -- A
IR -- VR
1000
5
1.0
Average Forward Power Dissipation, PF(AV) -- W
Pb-Free and Halogen Free
10000
5
2
0.01
memo
Pb-Free
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(5)DC
125
100
75
50
(1) (2)
25
0
0
0.2
0.4
(4)
(3)
(5)
0.6 0.76 0.8 0.95 1.0 1.05 1.2
Average Output Current, IO -- A
1.4
IT13284
No. A1055-2/4
SBE807
C -- VR
2
100
7
5
3
2
10
7
0.1
2
3
5
7 1.0
2
3
IFSM -- t
14
Surge Forward Current, IFSM(Peak) -- A
Interterminal Capacitance, C -- pF
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
IT09556
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
No. A1055-3/4
SBE807
Outline Drawing
SBE807-TL-E, SBE807-TL-W
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
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PS No. A1055-4/4