LINER RH1814M

RH1814M
Quad 3mA, 100MHz, 750V/µs
Operational Amplifier
U
The output drives a 100Ω load to ±3.35V with ±5V
supplies. On a single 5V supply, the output swings from
1.1V to 3.7V with a 100Ω load connected to 2.5V. The
amplifiers are stable with a 1000pF capacitive load making
them useful in buffer and cable driver applications.
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The RH1814 is a quad, low power, high speed, very high
slew rate operational amplifier with excellent DC performance, reduced supply current, lower input offset voltage,
lower input bias current and higher DC gain than other
devices with comparable bandwidth. The circuit topology
is a voltage feedback amplifier with the slewing characteristics of a current feedback amplifier.
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ABSOLUTE
AXI U
U
DESCRIPTIO
RATI GS
(Note 1)
Supply Voltage .................................................... 12.6V
Differential Input Voltage (Note 2) .......................... ±6V
Input Voltage ........................................................... ±VS
Output Short-Circuit Duration (Note 3) ........... Indefinite
Operating Temperature Range .............. – 55°C to 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.
The RH1814 is manufactured on Linear Technology’s
advanced low voltage complementary bipolar process.
U
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U
PACKAGE I FOR ATIO
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BUR -I CIRCUIT
TOP VIEW
50k
5.5V
100Ω
RH1814M
50k
–5.5V
RH1814M BI
OUT A
1
14
OUT D
–IN A
2
13
–IN D
+IN A
3
12
+IN D
V+
4
11
V–
+IN B
5
10
+IN C
–IN B
6
9
–IN C
OUT B
7
8
OUT C
W PACKAGE
14-LEAD FLATPAK GLASS SEALED
1
RH1814M
TABLE
1: ELECTRICAL CHARACTERISTICS
V = ±5V, V = 0V, unless otherwise noted.
S
(Pre-Irradiation)
CM
SYMBOL PARAMETER
CONDITIONS
MIN
TA = 25°C
TYP MAX
1.5
SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX
GROUP
1
4
2,3
UNITS
VOS
Input Offset Voltage
(Note 4)
∆VOS
∆Temp
Average Tempco of Offset
Voltage
(Note 5)
IOS
Input Offset Current
400
1
1000
2,3
nA
IB
Input Bias Current
±4
1
±10
2,3
µA
en
Input Noise Voltage
Density
f O = 10kHz
8
nV/√Hz
in
Input Noise Current
Density
f O = 10kHz
1
pA/√Hz
RIN
Input Resistance
VCM = ±3.5V
AVOL
Large-Signal Voltage Gain
30
mV
µV/°C
3
MΩ
VO = ±3V, RL ≥ 500Ω
1.5
4
0.7
VO = ±3V, RL ≥ 100Ω
1
4
0.5
V/mV
Input Voltage Range
Guaranteed by CMRR
±3.5
±3.5
V
CMRR
Common-Mode Rejection
Ratio
VCM = ±3.5V
75
1
70
dB
PSRR
Power Supply Rejection
Ratio
VS = ±2V to ±5.5V
78
1
72
Channel Separation
VO = ±3V, RL = 100Ω
82
1
78
VOUT
Output Voltage Swing
RL = 500Ω, 30mV Overdrive
±3.8
4
±3.4
5,6
RL = 100Ω, 30mV Overdrive
±3.35
4
±3
5,6
IOUT
Maximum Output Current
VOUT = ±3V, 30mV Overdrive
±40
±20
mA
ISC
Output Short-Circuit
Current
VOUT = 0V, 1V Overdrive (Note 3)
±75
±40
mA
IS
Supply Current
Per Amplifier
2
3.6
1
5,6
2,3
V/mV
dB
dB
6.5
2,3
V
V
mA
RH1814M
TABLE 2: ELECTRICAL CHARACTERISTICS
(Post-Irradiation, Note 7)
VS = ±5V, VCM = 0V, TA = 25°C, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 4)
IOS
Input Offset Current
IB
Input Bias Current
10KRAD(Si)
20KRAD(Si)
50KRAD(Si)
MIN
MAX MIN
MAX MIN
MAX
100KRAD(Si)
MIN
MAX
200KRAD(Si)
MIN
MAX UNITS
2
2
2.5
3
4
mV
500
500
750
1000
1500
nA
±15
µA
±5
±5
±7.5
±10
Input Voltage Range
Guaranteed by CMRR
±3.5
±3.5
±3.5
±3.5
±3.5
V
CMRR
Common-Mode Rejection
Ratio
VCM = ±3.5V
73
73
71
68
65
dB
PSRR
Power Supply Rejection
Ratio
VS = ±2V to ±5.5V
77
75
72
70
68
dB
AVOL
Large-Signal Voltage Gain
VO = ±3V, RL = 500Ω
1.4
1.3
1.0
0.8
0.6
V/mV
VO = ±3V, RL = 100Ω
0.9
0.8
0.6
0.5
0.4
V/mV
VOUT
Maximum Output Voltage
Swing
RL = 500Ω, 30mV Overdrive
±3.8
±3.8
±3.7
±3.6
±3.5
V
RL = 100Ω, 30mV Overdrive
±3.35
IS
Supply Current
Per Amplifier
±3.30
3.6
±3.25
3.6
±3.15
3.6
V
±3.05
3.6
3.6
mA
3
RH1814M
TABLE
1: ELECTRICAL CHARACTERISTICS
V = 5V, V = 0V, unless otherwise noted.
S
(Pre-Irradiation)
CM
MIN
TA = 25°C
TYP MAX
SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX
GROUP
SYMBOL PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 4)
∆VOS
∆Temp
Average Tempco of Offset
Voltage
(Note 5)
IOS
Input Offset Current
400
1
1000
2,3
nA
IB
Input Bias Current
±4
1
±10
2,3
µA
en
Input Noise Voltage
Density
f O = 10kHz
8
nV/√Hz
in
Input Noise Current
Density
f O = 10kHz
1
pA/√Hz
RIN
Input Resistance
VCM = 1.5V to 3.5V
AVOL
Large-Signal Voltage Gain
2
1
5
2,3
30
UNITS
mV
µV/°C
3
MΩ
VO = 1.5V to 3.5V, RL ≥ 500Ω
1
4
0.5
VO = 1.5V to 3.5V, RL ≥ 100Ω
0.7
4
0.3
V/mV
Input Voltage Range
(Positive)
Guaranteed by CMRR
3.5
3.5
V
Input Voltage Range
(Negative)
Guaranteed by CMRR
CMRR
Common-Mode Rejection
Ratio
VCM = 1.5V to 3.5V
73
1
68
PSRR
Power Supply Rejection
Ratio
VS = ±2V to ±5.5V
78
1
72
1.5
5,6
1.5
Channel Separation
VOUT = 1.5V to 3.5V, RL = 100Ω
81
1
77
VOUT
Output Voltage Swing
(Positive)
RL = 500Ω, 30mV Overdrive
3.9
4
3.5
RL = 100Ω, 30mV Overdrive
3.7
4
3.3
VOUT
Output Voltage Swing
(Negative)
V/mV
V
dB
2,3
dB
mA
RL = 500Ω, 30mV Overdrive
1.1
1.3
RL = 100Ω, 30mV Overdrive
1.3
1.5
5,6
V
5,6
V
V
5,6
V
IOUT
Maximum Output Current
VOUT = 1.5V or 3.5V,
30mV Overdrive
±25
±15
mA
ISC
Output Short-Circuit
Current
VOUT = 2.5V, 1V Overdrive (Note 3)
±55
±30
mA
IS
Supply Current
Per Amplifier
4
4
1
7.5
2,3
mA
RH1814M
TABLE 2: ELECTRICAL CHARACTERISTICS
(Post-Irradiation, Note 7)
VS = 5V, VCM = 0V, TA = 25°C, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 4)
IOS
Input Offset Current
IB
Input Bias Current
Input Voltage Range
(Negative)
(Positive)
Guaranteed by CMRR
CMRR
Common-Mode Rejection
Ratio
PSRR
10KRAD(Si)
20KRAD(Si)
50KRAD(Si)
MIN
MAX MIN
MAX MIN
MAX
100KRAD(Si)
MIN
MAX
200KRAD(Si)
MIN
MAX UNITS
2.5
2.5
3
3.5
4.5
mV
500
500
750
1000
1500
nA
±5
±5
±7.5
±10
±15
µA
1.5
3.5
1.5
3.5
3.5
3.5
3.5
V
V
VCM = 1.5V to 3.5V
71
71
69
66
63
dB
Power Supply Rejection
Ratio
VS = ±2V to ±5.5V
77
75
72
70
68
dB
AVOL
Large-Signal Voltage Gain
VO = 1.5V to 3.5V, RL = 500Ω
0.9
0.8
0.6
0.5
0.4
V/mV
VO = 1.5V to 3.5V, RL = 100Ω
0.6
0.55
0.45
0.40
0.35
V/mV
VOUT
Maximum Output Voltage
Swing (Positive)
RL = 500Ω, 30mV Overdrive
3.9
3.9
3.8
3.7
3.6
V
RL = 100Ω, 30mV Overdrive
3.7
VOUT
Maximum Output Voltage
Swing (Negative)
RL = 500Ω, 30mV Overdrive
1.1
1.1
1.15
1.2
1.3
RL = 100Ω, 30mV Overdrive
1.3
1.35
1.4
1.45
1.5
IS
Supply Current
Per Amplifier
4
4
4
4
4
Note 1: Absolute Maximum Ratings are those values beyond which the life
of the device may be impaired.
Note 2: Differential inputs of ±6V are appropriate for transient operation
only, such as during slewing. Large sustained differential inputs can cause
excessive power dissipation and may damage the part.
1.5
3.65
1.5
3.55
1.5
3.45
3.40
V
V
V
mA
Note 3: A heat sink may be required to keep the junction temperature
below absolute maximum when the output is shorted indefinitely.
Note 4: Input offset voltage is pulse tested and is exclusive of warm-up
drift.
Note 5: This parameter is not 100% tested.
5
RH1814M
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TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6
Group A Test Requirements (Method 5005)
1,2,3,4,5,6
Group B and D for Class S
End Point Electrical Parameters (Method 5005)
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
1,2,3
* PDA applies to subgroup 1. See PDA Test Notes.
TOTAL DOSE BIAS CIRCUIT
10k
5V
–
10k
2.5V
+
–5V
RH1814M TDBC
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TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current (Per Amplifier)
Positive Slew Rate
4.0
600
3.0
2.5
2.0
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G01
NEGATIVE SLEW RATE (V/µs)
3.5
1
VS = ±5V
RL = 10k
VS = ±5V
RL = 10k
POSITIVE SLEW RATE (V/µs)
SUPPLY CURRENT (mA)
VS = ±5V
RL = 10k
6
Negative Slew Rate
600
500
400
300
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G02
500
400
300
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1814M G03
RH1814M
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TYPICAL PERFOR A CE CHARACTERISTICS
Input Bias Current
Input Offset Voltage
7
VS = ±5V
VCM = 0V
0.5
0
–0.5
INPUT OFFSET CURRENT (µA)
INPUT BIAS CURRENT (µA)
1.0
Input Offset Current
1.5
VS = ±5V
VCM = 0V
6
5
4
3
2
–1.0
VS = ±5V
VCM = 0V
1.0
0.5
0
–0.5
1
–1.5
–1.0
0
10
100
TOTAL DOSE KRAD (Si)
10
100
TOTAL DOSE KRAD (Si)
1
1000
1000
RH1814M G06
66
64
62
60
58
100
COMMON MODE REJECTION RATIO (dB)
VS = ±5V
RL = 10k
VOUT = ±3V
68
10
100
TOTAL DOSE KRAD (Si)
Common-Mode Rejection Ratio
Open-Loop Gain
70
1
1000
RH1814M G05
RH1814M G04
OPEN-LOOP GAIN (dB)
56
VS = ±5V
1.5V ≤ VCM ≤ 3.5V
95
90
85
80
75
70
65
10
100
TOTAL DOSE KRAD (Si)
1
1000
10
100
TOTAL DOSE KRAD (Si)
1
RH1814M G07
Gain Bandwidth Product
Power Supply Rejection Ratio
105
1000
RH1814M G08
120
VS = ±2V TO ±5.5V
GAIN BANDWIDTH PRODUCT (MHz)
1
POWER SUPPLY REJECTION RATIO (dB)
INPUT OFFSET VOLTAGE (mV)
1.5
100
95
90
85
80
75
VS = ±5V
RL = 10k
110
100
90
80
70
1
10
100
TOTAL DOSE KRAD (Si)
1000
1
10
100
TOTAL DOSE KRAD (Si)
RH1814M G09
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
1000
RH1814M G11
7
RH1814M
I.D. No. 66-11-1814 1104
8
Linear Technology Corporation
LT/LT 1104 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
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© LINEAR TECHNOLOGY CORPORATION 2004