RH1814M Quad 3mA, 100MHz, 750V/µs Operational Amplifier DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1814 is a quad, low power, high speed, very high slew rate operational amplifier with excellent DC performance, reduced supply current, lower input offset voltage, lower input bias current and higher DC gain than other devices with comparable bandwidth. The circuit topology is a voltage feedback amplifier with the slewing characteristics of a current feedback amplifier. The output drives a 100Ω load to ±3.35V with ±5V supplies. On a single 5V supply, the output swings from 1.1V to 3.7V with a 100Ω load connected to 2.5V. The amplifiers are stable with a 1000pF capacitive load making them useful in buffer and cable driver applications. (Note 1) Supply Voltage....................................................... 12.6V Differential Input Voltage (Note 2) ........................... ±6V Input Voltage ............................................................ ±VS Output Short-Circuit Duration (Note 3) ........... Indefinite Operating Temperature Range ............... –55°C to 125°C Storage Temperature Range................... –65°C to 150°C Lead Temperature (Soldering, 10 sec).................... 300°C L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. The RH1814 is manufactured on Linear Technology’s advanced low voltage complementary bipolar process. PACKAGE INFORMATION BURN-IN CIRCUIT TOP VIEW 50k 5.5V 100Ω RH1814M 50k OUT A 1 14 OUT D –IN A 2 13 –IN D +IN A 3 12 +IN D V+ 4 11 V– +IN B 5 10 +IN C –IN B 6 9 –IN C OUT B 7 8 OUT C W PACKAGE 14-LEAD FLATPAK GLASS SEALED –5.5V RH1814M BI 1814mfb 1 RH1814M TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) VS = ±5V, VCM = 0V, unless otherwise noted. MIN SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 4) ∆VOS ∆Temp Average Tempco of Offset Voltage (Note 5) IOS Input Offset Current IB Input Bias Current en in Input Noise Voltage Density fO = 10kHz Input Noise Current Density fO = 10kHz RIN Input Resistance VCM = ±3.5V AVOL Large-Signal Voltage Gain VO = ±3V, RL ≥ 500Ω VO = ±3V, RL ≥ 100Ω 1.5 1 Input Voltage Range Guaranteed by CMRR ±3.5 CMRR Common Mode Rejection Ratio VCM = ±3.5V 75 PSRR Power Supply Rejection Ratio VS = ±2V to ±5.5V Channel Separation VO = ±3V, RL = 100Ω VOUT Output Voltage Swing IOUT TA = 25°C TYP MAX 1.5 SUBGROUP –55°C ≤ TA ≤ 125°C MIN TYP MAX 1 4 SUBGROUP 2, 3 30 UNITS mV µV/°C 400 1 1000 2, 3 ±4 1 ±10 2, 3 nA µA 8 nV/√Hz 1 pA/√Hz 3 MΩ 4 4 0.7 0.5 5, 6 V/mV V/mV ±3.5 V 1 70 dB 78 1 72 82 1 78 RL = 500Ω, 30mV Overdrive RL = 100Ω, 30mV Overdrive ±3.8 ±3.35 4 4 ±3.4 ±3 Maximum Output Current VOUT = ±3V, 30mV Overdrive ±40 ±20 mA ISC Output Short-Circuit Current VOUT = 0V, 1V Overdrive (Note 3) ±75 ±40 mA IS Supply Current per Amplifier 3.6 1 2, 3 dB dB 5, 6 5, 6 6.5 2, 3 V V mA 1814mfb 2 RH1814M TABLE 2: ELECTRICAL CHARACTERISTICS (Post-Irradiation) VS = ±5V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage IOS Input Offset Current IB Input Bias Current Input Voltage Range CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX (Note 4) 2 4 4 4 mV 500 500 750 1000 1500 nA ±15 µA ±5 Guaranteed by CMRR ±7.5 ±10 ±3.5 ±3.5 ±3.5 ±3.5 V 73 73 62 62 62 dB 77 75 65 65 65 dB 1.4 0.9 1.3 0.8 1.0 0.6 0.8 0.5 0.6 0.4 V/mV V/mV ±3.8 ±3.30 ±3.7 ±3.25 ±3.6 ±3.15 ±3.5 ±3.05 Common Mode Rejection VCM = ±3.5V Ratio PSRR Power Supply Rejection Ratio AVOL Large-Signal Voltage Gain VO = ±3V, RL = 500Ω VO = ±3V, RL = 100Ω VOUT Maximum Output Voltage RL = 500Ω, 30mV Overdrive ±3.8 Swing RL = 100Ω, 30mV Overdrive ±3.35 IS Supply Current per Amplifier ±5 ±3.5 CMRR VS = ±2V to ±5.5V UNITS 2 3.6 3.6 3.6 3.6 V V 3.6 mA 1814mfb 3 RH1814M TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) VS = 5V, OV, VCM = 2.5V, unless otherwise noted. MIN TA = 25°C TYP MAX SUBGROUP –55°C ≤ TA ≤ 125°C MIN TYP MAX SUBGROUP UNITS SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 4) ∆VOS ∆Temp Average Tempco of Offset Voltage (Note 5) IOS Input Offset Current IB Input Bias Current en in Input Noise Voltage Density fO = 10kHz Input Noise Current Density fO = 10kHz RIN Input Resistance VCM = 1.5V to 3.5V AVOL Large-Signal Voltage Gain VO = 1.5V to 3.5V, RL ≥ 500Ω VO = 1.5V to 3.5V, RL ≥ 100Ω 1 0.7 Input Voltage Range (Positive) Guaranteed by CMRR 3.5 Input Voltage Range (Negative) Guaranteed by CMRR CMRR Common Mode Rejection Ratio VCM = 1.5V to 3.5V 73 1 68 PSRR Power Supply Rejection Ratio VS = ±2V to ±5.5V 78 1 72 Channel Separation VOUT = 1.5V to 3.5V, RL = 100Ω 81 1 77 VOUT Output Voltage Swing (Positive) RL = 500Ω, 30mV Overdrive RL = 100Ω, 30mV Overdrive 3.9 3.7 4 4 3.5 3.3 Output Voltage Swing (Negative) RL = 500Ω, 30mV Overdrive RL = 100Ω, 30mV Overdrive IOUT Maximum Output Current VOUT = 1.5V to 3.5V, 30mV Overdrive ±25 ±15 mA ISC Output Short-Circuit Current VOUT = 2.5V, 1V Overdrive (Note 3) ±55 ±30 mA IS Supply Current per Amplifier 2 1 5 2, 3 30 mV µV/°C 400 1 1000 2, 3 ±4 1 ±10 2, 3 nA µA 8 nV/√Hz 1 pA/√Hz 3 MΩ 4 4 0.5 0.3 5, 6 3.5 1.5 4 V 1.5 1.1 1.3 V dB 2, 3 dB dB 1.3 1.5 1 V/mV V/mV 7.5 5, 6 5, 6 V V 5, 6 V V 2, 3 mA 1814mfb 4 RH1814M TABLE 2: ELECTRICAL CHARACTERISTICS VS = 5V, OV, VCM = 2.5V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage IOS Input Offset Current IB CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS (Note 4) Input Bias Current Input Voltage Range Negative Positive Guaranteed by CMRR 3.5 CMRR Common Mode Rejection VCM = 1.5V to 3.5V Ratio PSRR Power Supply Rejection Ratio AVOL VOUT 2.5 2.5 4.5 4.5 4.5 mV 500 500 750 1000 1500 nA ±5 ±5 ±7.5 ±10 ±15 µA 1.5 V V 1.5 3.5 1.5 3.5 1.5 3.5 1.5 3.5 71 71 60 60 60 dB 77 75 65 65 65 dB Large-Signal Voltage Gain VO = 1.5V to 3.5V, RL = 500Ω VO = 1.5V to 3.5V, RL = 100Ω 0.9 0.6 0.8 0.55 0.6 0.45 0.5 0.40 0.4 0.35 V/mV V/mV Maximum Output Voltage RL = 500Ω, 30mV Overdrive Swing (Positive) RL = 100Ω, 30mV Overdrive 3.9 3.7 3.9 3.65 3.8 3.55 3.7 3.45 3.6 3.40 V V VS = ±2V to ±5.5V Maximum Output Voltage RL = 500Ω, 30mV Overdrive RL = 100Ω, 30mV Overdrive Swing (Negative) IS (Post-Irradiation) Supply Current per Amplifier Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Differential inputs of ±6V are appropriate for transient operation only, such as during slewing. Large sustained differential inputs can cause excessive power dissipation and may damage the part. 1.1 1.3 1.1 1.35 1.15 1.4 1.2 1.45 1.3 1.5 4 4 4 4 4 V V mA Note 3: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted indefinitely. Note 4: Input offset voltage is pulse tested and is exclusive of warm-up drift. Note 5: This parameter is not 100% tested. 1814mfb 5 RH1814M TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S End Point Electrical Parameters (Method 5005) PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 1,2,3 * PDA applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 10k 5V – 2.5V 10k + –5V RH1814M TDBC TYPICAL PERFORMANCE CHARACTERISTICS Supply Current (Per Amplifier) Positive Slew Rate 4.0 600 3.0 2.5 10 100 TOTAL DOSE KRAD (Si) 1000 RH1814M G01 NEGATIVE SLEW RATE (V/µs) 3.5 1 VS = ±5V RL = 10k VS = ±5V RL = 10k POSITIVE SLEW RATE (V/µs) SUPPLY CURRENT (mA) VS = ±5V RL = 10k 2.0 Negative Slew Rate 600 500 400 300 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1814M G02 500 400 300 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1814M G03 1814mfb 6 RH1814M TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage Input Bias Current 7 VS = ±5V VCM = 0V 0.5 0 –0.5 –1.0 5 4 3 2 1 10 100 TOTAL DOSE KRAD (Si) 0 1000 1 10 100 TOTAL DOSE KRAD (Si) RH1814M G04 1000 Open-Loop Gain VS = ±5V RL = 10k VOUT = ±3V 68 66 64 62 60 58 56 1 1.0 0.5 0 –0.5 –1.0 1 10 100 TOTAL DOSE KRAD (Si) RH1814M G06 10 100 TOTAL DOSE KRAD (Si) 90 85 80 75 70 65 1000 VS = ±5V 1.5V ≤ VCM ≤ 3.5V 95 1 10 100 TOTAL DOSE KRAD (Si) RH1814M G07 Gain-Bandwidth Product 120 VS = ±2V TO ±5.5V 100 95 90 85 80 75 70 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1814M G08 Power Supply Rejection Ratio 105 1000 Common Mode Rejection Ratio 100 COMMON MODE REJECTION RATIO (dB) 70 VS = ±5V VCM = 0V RH1814M G05 GAIN BANDWIDTH PRODUCT (MHz) 1 OPEN-LOOP GAIN (dB) –1.5 INPUT OFFSET CURRENT (µA) INPUT BIAS CURRENT (µA) 1.0 Input Offset Current 1.5 VS = ±5V VCM = 0V 6 POWER SUPPLY REJECTION RATIO (dB) INPUT OFFSET VOLTAGE (mV) 1.5 1000 VS = ±5V RL = 10k 110 100 90 80 1 10 100 TOTAL DOSE KRAD (Si) RH1814M G09 1000 RH1814M G11 1814mfb Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 7 RH1814M REVISION HISTORY REV DATE DESCRIPTION PAGE NUMBER A 02/10 Changes to Electrical Characteristics 3, 4, 5 B 12/10 Revised section headers 3, 4, 5 1814mfb 8 Linear Technology Corporation I.D. No. 66-11-1814 LT 1210 REV B • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2004