LINER RH1016M

RH1016M
UltraFast Precision
10ns Comparator
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
The RH1016 is an UltraFastTM 10ns comparator that interfaces directly to TTL/CMOS logic while operating from
either ±5V or single 5V supplies. Tight offset voltage
specifications and high gain allow the RH1016 to be used
in precision applications. Matched complementary outputs
further extend the versatility of this comparator.
Positive Supply Voltage (Note 5).................................7V
Negative Supply Voltage ...........................................–7V
Differential Input Voltage (Note 7).............................±5V
+IN, –IN and LATCH ENABLE Current (Note 7) ....±10mA
Output Current (Continuous) (Note 7) .................±20mA
Operating Temperature Range................ –55°C to 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) .................. 300°C
(Note 1)
A unique output stage provides active drive in both directions for maximum speed into TTL/CMOS logic or passive
loads, yet does not exhibit the large current spikes found
in conventional output stages. This allows the RH1016 to
remain stable with the outputs in the active region which
greatly reduces the problem of output “glitching” when
the input signal is slow moving or is low level.
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
UltraFast is a trademark of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
The RH1016 has a LATCH pin which will retain input data
at the outputs, when held high. Quiescent negative power
supply current is only 3mA. This allows the negative supply
pin to be driven from virtually any supply voltage with a
simple resistive divider. Device performance is not affected
by variations in negative supply voltage.
The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent
military applications.
BURN-IN CIRCUIT
PACKAGE INFORMATION
V4 MONITOR
F1
V4
TOP VIEW
T.P.
20Ω
5.11k
1k
5.11k
GND POWER
1
10
2
9
3
8
4
7
5
6
T.P.
T.P.
1
10
Q OUT
+IN
2
9
Q OUT
–IN
3
8
GND
V–
4
7
LATCH ENABLE
NC
5
6
NC
W PACKAGE
10-LEAD CERPAC
20Ω
F2
V+
T.P.
V3
V3 MONITOR
GND MONITOR
RH1016 BURN-IN
NOTES:
1. UNLESS OTHERWISE SPECIFIED, COMPONENT TOLERANCES
SHALL BE PER MILITARY SPECIFICATION.
2. TJ = 161°C MAXIMUM
3. TC = 139°C MINIMUM
4. TA = 100°C MINIMUM
BURN-IN VOLTAGES: V4 = 5.5V TO 6V
V3 = –5.5V TO –6V
rh1016fa
1
RH1016M
TABLE 1: ELECTRICAL CHARACTERISTICS
(Preirradiation) V+ = 5V, V– = –5V, VOUT(Q) = 1.4V, VLATCH = 0V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
RS ≤ 100Ω
NOTES
MIN
2
TA = 25°C
SUBTYP
MAX GROUP
1
±3
–55°C ≤ TA ≤ 125°C
MIN
TYP
MAX
1
±4
SUBGROUP
2, 3
UNITS
VOS
Input Offset Voltage
Δ VOS
ΔT
Input Offset Voltage
Drift
IOS
Input Offset Current
2
0.3
1
1
1.3
2, 3
μA
IB
Input Bias Current
3
5
10
1
13
2, 3
μA
4
Input Voltage Range
Single 5V Supply
CMRR
Common Mode
Rejection
–3.75V ≤ VCM ≤ 3.5V
PSRR
Supply Voltage
Rejection
Positive Supply 4.6V ≤ V+ ≤ 5.4V
6
6
Small-Signal Voltage
Gain
1V ≤ VOUT ≤ 2V
VOH
Output High Voltage
V+ ≥ 4.6V, IOUT = 1mA
VOL
Output Low Voltage
I+
1
80
75
1
80
100
1
1400
3000
4
60
Negative Supply –7V ≤ V– ≤ –2V
AV
–3.75
1.25
mV
μV/°C
3.5
3.5
90
V
V
2, 3
dB
54
2, 3
dB
80
2, 3
dB
V/V
1
2.65
3.2
2, 3
V
IOUT = 10mA
1
2.40
ISINK = 4mA
1
0.3
0.55
2, 3
V
2, 3
V
Positive Supply
Current
1
25
35
2, 3
mA
I–
Negative Supply
Current
1
3
5
2,3
mA
VIH
LATCH Pin High Input
Voltage
VIL
LATCH Pin Low Input
Voltage
IIL
LATCH Pin Current
VLATCH = 0V
1
500
2, 3
μA
tPD
Propagation Delay
ΔVIN = 100mV, OD = 5mV
4
10
14
4
16
5
ns
ΔVIN = 100mV, OD = 20mV
4
9
12
4
15
5
ns
3
2
V
0.8
V
rh1016fa
2
RH1016M
TABLE 1A: ELECTRICAL CHARACTERISTICS
(Postirradiation) TA = 25°C, V+ = 5V, V– = –5V, VOUT(Q) = 1.4V, VLATCH = 0V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
RS ≤ 100Ω
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS
Input Offset Voltage
2
±4
±4.5
±5
±5.5
±6
mV
IOS
Input Offset Current
2
2
2.5
5
8
12
μA
IB
Input Bias Current
3
12
12
14
17
20
μA
3.5
3.5
V
V
Input Voltage Range
Single 5V Supply
6
6
–3.75
1.25
–3.75
1.25
3.5
3.5
–3.75
1.25
3.5
3.5
–3.75
1.25
3.5
3.5
–3.75
1.25
80
77
74
70
65
dB
Supply Voltage Rejection Positive Supply
4.6V ≤ V+ ≤ 5.4V
60
58
56
53
50
dB
Negative Supply
–7V ≤ V– ≤ –2V
78
76
74
72
70
dB
CMRR
Common Mode
Rejection Ratio
PSRR
–3.75V ≤ VCM ≤ 3.5V
3.5
3.5
AV
Small-Signal Voltage
Gain
1V ≤ VOUT ≤ 2V
1300
1200
1100
1000
900
V/V
VOH
Output High Voltage
V+ ≥ 4.6V, IOUT = 1mA
2.65
2.65
2.64
2.63
2.60
V
IOUT = 10mA
2.40
VOL
Output Low Voltage
I+
Positive Supply Current
I–
Negative Supply Current
IIL
LATCH Pin Current
VLATCH = 0V
tPD
Propagation Delay
ΔVIN = 100mV, OD = 5mV
ΔVIN = 100mV, OD = 20mV
ISINK = 4mA
2.40
2.39
2.38
2.35
V
0.55
0.55
0.56
0.57
0.6
V
35
35
35
35
35
mA
5
5
5
5
5
mA
525
575
650
725
800
μA
4
16
16
16
16
16
ns
4
14
14
14
14
14
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Input offset voltage is defined as the average of the two voltages
measured by forcing first one output, then the other to 1.4V. Input offset
current is defined in the same way.
Note 3: Input bias current (IB) is defined as the average of the two input
currents.
Note 4: tPD and ΔtPD cannot be measured in automatic handling
equipment with low values of overdrive. The RH1016 is sample tested with
a 1V step and 500mV overdrive. Correlation tests have shown that tPD and
ΔtPD limits shown can be guaranteed with this test if additional DC tests
are performed to guarantee that all internal bias conditions are correct. For
low overdrive conditions, VOS is added to overdrive.
Note 5: Electrical specifications apply only up to 5.4V.
Note 6: Input voltage range is guaranteed in part by CMRR testing and
in part by design and characterization. See the LT1016 data sheet for
discussion of input voltage range for supplies other than ±5V or 5V.
Note 7: This parameter is guaranteed to meet specified performance
through design and characterization. It has not been tested.
rh1016fa
3
RH1016M
TABLE 2: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in that
lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5
Group A Test Requirements (Method 5005)
1*,2,3,4,5
Group B and D for Class S,
End Point Electrical Parameters (Method 5005)
1,2,3
*PDA applies to subgroup 1. See PDA Test Notes.
TOTAL DOSE BIAS CIRCUIT
V+
5V
C1
R1
5.11k 0.01μF
2
3
V–
–5V
RH1016
W10 TO FP14
1
R2
1k
4
C2
R3
5.11k 0.01μF
6
5
14
V+
Q
+IN
Q
–IN
GND
V–
EN
NC
NC
13
12
11
10
9
8
7
RH1016 BIAS
rh1016fa
4
RH1016M
TYPICAL PERFORMANCE CHARACTERISTICS
Positive Supply Current
Negative Supply Current
–1.0
32
30
28
26
24
Output High Voltage
3.5
VS = ±5V
VS = ±5V
3.4 IOUT = 1mA
–1.5
OUTPUT HIGH VOLTAGE (V)
VS = ±5V
NEGATIVE SUPPLY CURRENT (mA)
POSITIVE SUPPLY CURRENT (mA)
34
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
1
10
100
TOTAL DOSE KRAD (Si)
1000
Output High Voltage
10
100
TOTAL DOSE KRAD (Si)
3.0
2.9
2.8
2.7
2.6
Common Mode Rejection Ratio
0.40
0.35
0.30
0.25
0.20
0.15
2.5
0.10
2.4
1000
1000
RH1016 G03
COMMON MODE REJECTIION RATIO (dB)
OUTPUT LOW VOLTAGE (V)
3.1
10
100
TOTAL DOSE KRAD (Si)
120
VS = ±5V
0.45 IOUT = 4mA
VS = ±5V
115 –3.75V ≤ VCM ≤ 3.5V
110
105
100
95
90
85
80
10
100
TOTAL DOSE KRAD (Si)
1
1000
1
10
100
TOTAL DOSE KRAD (Si)
RH1016 G05
RH1016 G04
Input Bias Current
1000
RH1016 G06
Input Offset Current
10
VS = ±5V
VS = ±5V
9
8
INPUT BIAS CURRENT (μA)
INPUT BIAS CURRENT (μA)
OUTPUT HIGH VOLTAGE (V)
1
Output Low Voltage
VS = ±5V
3.2 IOUT = 10mA
9
2.9
1000
0.50
10
3.0
RH1016 G02
3.3
10
100
TOTAL DOSE KRAD (Si)
3.1
2.7
1
RH1016 G01
1
3.2
2.8
–5.0
22
3.3
7
6
5
4
3
2
8
7
6
5
4
3
2
1
1
0
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
1
10
100
TOTAL DOSE KRAD (Si)
RH1016 G07
1000
RH1016 G07
rh1016fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
5
RH1016M
TYPICAL PERFORMANCE CHARACTERISTICS
INPUT OFFSET VOLTAGE (mV)
2.0
SMALL-SIGNAL VOLTAGE GAIN (V/V)
VS = ±5V
RS ≤ 100Ω
2.5
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
VS = ±5V
1V ≤ VOUT ≤ 2V
2500
2000
1500
1000
–2.5
500
–3.0
1
10
100
TOTAL DOSE KRAD (Si)
1
1000
10
100
TOTAL DOSE KRAD (Si)
RH1016 G09
1000
90
V– = –5V
+
85 4.6V ≤ V ≤ 5.4V
80
75
70
65
60
55
50
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1016 G11
RH1016 G10
Negative Power Supply
Rejection Ratio
LATCH Pin Current
0
120
V+ = 5V
–7V
≤ V– ≤ –2V
115
VS = ±5V
VLATCH = 0V
–50
LATCH PIN CURRENT (μA)
NEGATIVE POWER SUPPLY REJECTION RATIO (dB)
POSITIVE POWER SUPPLY REJECTION RATIO (dB)
3000
3.0
Positive Power Supply
Rejection Ratio
Small-Signal Voltage Gain
Input Offset Voltage
110
105
100
95
90
85
–100
–150
–200
–250
–300
–350
–400
–450
80
–500
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1016 G12
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1016 G13
I.D. No. 66-10-1016
rh1016fa
6
Linear Technology Corporation
LT 0508 REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2007